Light-emitting device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-12237441-B2
Application number	US-202117464355-A
Country	US
Kind code	B2
Filing date	Sep 1, 2021
Priority date	Sep 3, 2020
Publication date	Feb 25, 2025
Grant date	Feb 25, 2025

Abstract

A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a light-emitting mesa structure having a first top surface and a peripheral surface connected to said first top surface;
a transparent conductive layer disposed on said first top surface of said light-emitting mesa structure, said transparent conductive layer having a second top surface;
a first insulating structure at least disposed on said peripheral surface of said light-emitting mesa structure, said first insulating structure having a third top surface and an inner tapered surface indented from said third top surface, said inner tapered surface defining an acute angle with respect to a portion of said second top surface of said transparent conductive layer under said inner tapered surface; and
a reflective layer disposed on said transparent conductive layer, said reflective layer having a first side surface in contact with said inner tapered surface of said first insulating structure,
wherein the light-emitting device further comprises a second insulating structure disposed on said transparent conductive layer to be connected to said first insulating structure, said second insulating structure being formed with a plurality of through-holes, said reflective layer extending through said through-holes to be electrically connected to said transparent conductive layer,
wherein said second insulating structure has a thickness less than a maximum thickness of said first insulating structure,
wherein said reflective layer has a thickness no greater than a maximum thickness of said first insulating structure, and
wherein said reflective layer is not overlapping said third top surface in a direction perpendicular to said third top surface of said first insulating structure.

2. The light-emitting device of claim 1 , wherein
said transparent conductive layer is disposed on a first region of said first top surface of said light-emitting mesa structure, and
said first insulating structure has a main portion surrounding said peripheral surface of said light-emitting mesa structure and
a lateral portion extending from said main portion, said lateral portion being disposed on a second region of said first top surface of said light-emitting mesa structure, said lateral portion being peripherally disposed on said second top surface of said transparent conductive layer, said lateral portion defining said inner tapered surface.

3. The light-emitting device of claim 1 , wherein said second insulating structure has a fourth top surface having an altitude relative to said second top surface of said transparent conductive layer, said fourth top surface being at a level lower than a level of said third top surface of said first insulating structure.

4. The light-emitting device of claim 1 , wherein said second insulating structure has a thickness less than two-thirds of the maximum thickness of said first insulating structure.

5. The light-emitting device of claim 1 , wherein said reflective layer has a first bottom surface in contact with said second top surface of said transparent conductive layer, said first bottom surface being connected to said first side surface, said acute angle being less than 60 degrees, said first side surface of said reflective layer defining an obtuse angle of larger than 120 degrees with respect to a portion of said second top surface of said transparent conductive layer under said reflective layer.

6. The light-emitting device of claim 5 , wherein said acute angle is less than 30 degrees, said first side surface of said reflective layer defining an obtuse angle of larger than 150 degrees with respect to a portion of said second top surface of said transparent conductive layer under said reflective layer.

7. The light-emitting device of claim 1 , further comprising a barrier layer disposed on said reflective layer, said barrier layer having a second side surface, a first region of said inner tapered surface of said first insulating structure being covered by said first side surface of said reflective layer, said second side surface being in contact with a second region of said inner tapered surface of said first insulating structure.

8. The light-emitting device of claim 7 , wherein said barrier layer is formed as a metallic single-layer structure or a metallic multi-layered structure.

9. The light-emitting device of claim 7 , wherein said barrier layer has a second bottom surface in contact with said reflective layer, said second side surface defining an obtuse angle with respect to said second bottom surface.

10. The light-emitting device of claim 1 , wherein said reflective layer further has a fifth top surface and a V-shaped groove indented from said fifth top surface and adjacent to said inner tapered surface.

11. The light-emitting device of claim 10 , wherein said V-shaped groove forms an included angle of no less than 90 degrees.

12. The light-emitting device of claim 11 , wherein said V-shaped groove forms an included angle of larger than 120 degrees.

13. The light-emitting device of claim 1 , wherein said light-emitting mesa structure is formed with a plurality of trenches, said trenches being indented from said first top surface, each of said trenches having an inner sidewall connected to said first top surface, said first insulating structure being further disposed on said inner sidewall of each of said trenches.

14. The light-emitting device of claim 13 , wherein said light-emitting mesa structure includes a first type semiconductor layer, an active layer disposed on said first type semiconductor layer, and a second type semiconductor layer disposed on said active layer opposite to said first type semiconductor layer, said second type semiconductor layer defining said first top surface opposite to said active layer, each of said trenches extending through said second type semiconductor layer and said active layer and terminating at said first type semiconductor layer.

15. The light-emitting device of claim 1 , wherein said reflective layer is formed as a metallic single-layer structure or a metallic multi-layered structure.

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Liu Xiaoliang
• Zhu Xiushan
• Huang Min
• Zheng Gaolin
• He Anhe
• Peng Kang-Wei
• Lin Su-Hui

Classifications

• H10H20/034

  of coatings · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/833 Primary

  Transparent materials · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/0363

  of optical field-shaping means · CPC title