Organic semiconductor device, organic el device, photodiode sensor, display device, light-emitting apparatus, electronic device, and lighting device

Patent metadata

Field	Value
Publication number	US-12232342-B2
Application number	US-202117552638-A
Country	US
Kind code	B2
Filing date	Dec 16, 2021
Priority date	Dec 29, 2020
Publication date	Feb 18, 2025
Grant date	Feb 18, 2025

Abstract

An organic semiconductor device with low driving voltage is provided. The organic semiconductor device includes a layer containing an organic compound between a pair of electrodes. The layer containing an organic compound includes a hole-transport region. The hole-transport region includes a first layer and a second layer. The first layer is positioned between the anode and the second layer. When a potential gradient of a surface potential of an evaporated film is set as GSP (mV/nm), a value obtained by subtracting GSP of an organic compound in the second layer from GSP of an organic compound in the first layer is less than or equal to 20 (mV/nm).

First claim

What is claimed is:

1. An organic semiconductor device comprising:
an anode;
a cathode; and
a layer comprising an organic compound between the anode and the cathode,
wherein the layer comprises a hole-transport region,
wherein the hole-transport region comprises a first layer and a second layer,
wherein the first layer is positioned between the anode and the second layer, and
wherein, when a potential gradient of a surface potential of an evaporated film is set as GSP (mV/nm), a value obtained by subtracting GSP of an organic compound in the second layer from GSP of an organic compound in the first layer is less than or equal to 20 (mV/nm).

2. The organic semiconductor device according to claim 1 ,
wherein the value is less than or equal to 5 (mV/nm).

3. The organic semiconductor device according to claim 1 ,
wherein the value is less than or equal to 0 (mV/nm).

4. The organic semiconductor device according to claim 1 ,
wherein the first layer is in contact with the second layer.

5. A lighting device comprising the organic semiconductor device according to claim 1 .

6. A display device comprising the organic semiconductor device according to claim 1 .

7. An electronic device comprising the organic semiconductor device according to claim 1 .

8. An organic EL device comprising:
an anode;
a cathode; and
a layer comprising an organic compound between the anode and the cathode,
wherein the layer comprises a hole-transport region and a light-emitting layer,
wherein the hole-transport region is positioned between the anode and the light-emitting layer,
wherein the hole-transport region comprises a first layer and a second layer,
wherein the first layer is positioned between the anode and the second layer, and
wherein, when a potential gradient of a surface potential of an evaporated film is set as GSP (mV/nm), a value obtained by subtracting GSP of an organic compound in the second layer from GSP of an organic compound in the first layer is less than or equal to 20 (mV/nm).

9. The organic EL device according to claim 8 ,
wherein the value is less than or equal to 5 (mV/nm).

10. The organic EL device according to claim 8 ,
wherein the value is less than or equal to 0 (mV/nm).

11. The organic EL device according to claim 8 ,
wherein the first layer is in contact with the second layer.

12. The organic EL device according to claim 8 ,
wherein the second layer is in contact with the light-emitting layer.

13. The organic EL device according to claim 8 ,
wherein end faces of the hole-transport region and the light-emitting layer are positioned on substantially the same plane.

14. An electronic device comprising:
the organic EL device according to claim 8 ; and
at least one of a sensor, an operation button, a speaker, and a microphone.

15. A light-emitting apparatus comprising:
the organic EL device according to claim 8 ; and
at least one of a transistor and a substrate.

16. A lighting device comprising:
the organic EL device according to claim 8 ; and
a housing.

17. A photodiode sensor comprising:
an anode;
a cathode; and
a layer comprising an organic compound between the anode and the cathode,
wherein the layer comprises an active layer and a hole-transport region,
wherein the hole-transport region is positioned between the active layer and the cathode,
wherein the hole-transport region comprises a first layer and a second layer,
wherein the first layer is positioned between the anode and the second layer, and
wherein, when a potential gradient of a surface potential of an evaporated film is set as GSP (mV/nm), a value obtained by subtracting GSP of an organic compound in the second layer from GSP of an organic compound in the first layer is less than or equal 30 to 20 (mV/nm).

18. The photodiode sensor according to claim 17 ,
wherein the value is less than or equal to 5 (mV/nm).

19. The photodiode sensor according to claim 17 ,
wherein the value is less than or equal to 0 (mV/nm).

20. The photodiode sensor according to claim 17 ,
wherein the first layer is in contact with the second layer.

21. The photodiode sensor according to claim 17 ,
wherein the active layer is in contact with the first layer.

Assignees

• Semiconductor Energy Lab

Inventors

• Seo Hiromi
• Watabe Takeyoshi
• Ueda Airi
• Kawano Yuta
• Ohsawa Nobuharu
• Kido Hiromitsu
• Seo Satoshi

Classifications

• H10K59/87 Primary

  Passivation; Containers; Encapsulations · CPC title

• H10K39/30

  Devices controlled by radiation · CPC title

• H10K30/451

  comprising a metal-semiconductor-metal [m-s-m] structure · CPC title

• H10K2101/20

  Delayed fluorescence emission · CPC title

• H10K2101/30

  Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values · CPC title