Charge pump circuit, chip, and communication terminal

Patent metadata

Field	Value
Publication number	US-12231035-B2
Application number	US-202318299056-A
Country	US
Kind code	B2
Filing date	Apr 12, 2023
Priority date	Oct 12, 2020
Publication date	Feb 18, 2025
Grant date	Feb 18, 2025

Abstract

Disclosed in the present invention are a charge pump circuit, a chip, and a communication terminal. The charge pump circuit comprises a phase clock generation module, an acceleration response control module, and a plurality of sub charge pump modules. By generating a plurality of clock signals with a fixed phase difference by means of the phase clock generation module, correspondingly controlling the plurality of sub charge pump modules to generate output voltages, and by means of the acceleration response control module, measuring the output voltage of each sub charge pump module, and separately outputting a logic signal to the phase clock generation module and each sub charge pump module, the frequency of the clock signals outputted by the phase clock generation module is changed, and the charge and discharge time of a capacitor in each sub charge pump module is reduced.

First claim

What is claimed is:

1. A charge pump circuit, comprising a phase clock generation module, an acceleration response control module and a plurality of sub charge pump modules, wherein an output end of the phase clock generation module is connected to a clock control end of each of the sub charge pump modules, the plurality of sub charge pump modules are connected in parallel and then correspondingly connected to an input power supply end and an output voltage end, the output voltage end is connected to an input end of the acceleration response control module, and an output end of the acceleration response control module is connected to input ends of the phase clock generation module and each of the sub charge pump modules;
the phase clock generation module generates a plurality of clock signals with a fixed phase difference, to correspondingly control the plurality of sub charge pump modules to generate output voltages, and meanwhile after the output voltages are measured by means of the acceleration response control module, separately outputs a logic signal to the phase clock generation module and each of the sub charge pump modules, so that when the output voltages do not reach a target value, the phase clock generation module generates an acceleration clock signal to generate the output voltages rapidly, and when the output voltages reach the target value, the phase clock generation module controls each of the sub charge pump modules to maintain the normal output voltage.

2. The charge pump circuit according to claim 1 , wherein:
the phase clock generation module comprises a first phase inverter and a plurality of phase clock sub circuits each composed of a first NMOS transistor, a first capacitor, a second capacitor, an output node and a second phase inverter, wherein an input end of the first phase inverter is connected to an output end of the acceleration response control module, an output end of the first phase inverter is connected to a gate of each of the first NMOS transistors, the first capacitor is serially connected between a drain of each of the first NMOS transistors and the corresponding output node, a source of each of the first NMOS transistors is grounded, each of the output nodes is connected to the corresponding sub charge pump module, the second capacitor is serially connected between each of the output nodes and the ground, and after being cascaded and correspondingly connected to a power supply and the ground, the second phase inverters are connected end to end to form a ring oscillator.

3. The charge pump circuit according to claim 2 , wherein:
the second phase inverter comprises a first PMOS transistor and a second NMOS transistor, a gate and a drain of the first PMOS transistor are correspondingly connected to a gate and a drain of the second NMOS transistor, a source of the first PMOS transistor is connected to the power supply, and a source of the second NMOS transistor is grounded.

4. The charge pump circuit according to claim 2 , wherein:
according to a state of the logic signal outputted by the acceleration response control module to the phase clock generation module, the size of a load capacitor of the output node of the phase clock generation module is changed, to adjust the size of an oscillation frequency of the plurality of clock signals with the fixed phase difference generated by the ring oscillator.

5. The charge pump circuit according to claim 2 , wherein:
according to a state of the logic signal outputted by the acceleration response control module to the phase clock generation module, a width to length ratio of a switching tube transistor in each of the second phase inverters is changed, to change equivalent resistance of the second phase inverter, so as to adjust the size of an oscillation frequency of the plurality of clock signals with the fixed phase difference generated by the ring oscillator.

6. The charge pump circuit according to claim 1 , wherein:
when each of the sub charge pump modules provides a voltage output higher than an input power supply, each of the sub charge pump modules comprises a third NMOS transistor, a fourth NMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a fifth PMOS transistor, a first select switch, a second select switch, a third select switch, a fourth select switch, a third capacitor, a fourth capacitor, a fifth capacitor, a sixth capacitor and an eighth capacitor, wherein a substrate end and a source of the third NMOS transistor, as well as a substrate end and a source of the fourth NMOS transistor are separately connected to the input power supply; a gate of the third NMOS transistor is separately connected to a drain of the fourth NMOS transistor, a polar plate of the fourth capacitor and a drain of the second PMOS transistor; a drain of the third NMOS transistor is separately connected to a gate of the fourth NMOS transistor, a polar plate of the third capacitor and a drain of the third PMOS transistor; a substrate end and a source of the second PMOS transistor, a substrate end and a source of the third PMOS transistor, a substrate end and a source of the fourth PMOS transistor, as well as a substrate end and a source of the fifth PMOS transistor are respectively connected to the output voltage end and one end of the eighth capacitor, and the other end of the eighth capacitor is grounded; a gate of the second PMOS transistor is separately connected to a polar plate of the sixth capacitor, a drain of the fourth PMOS transistor and a gate of the fifth PMOS transistor; a gate of the third PMOS transistor is separately connected to a polar plate of the fifth capacitor, a drain of the fifth PMOS transistor and a gate of the fourth PMOS transistor; the other polar plates of the third capacitor, the fourth capacitor, the fifth capacitor and the sixth capacitor are connected to movable ends of the corresponding select switches; the movable end of each of the select switches is correspondingly connected to the respective clock control end; the clock control ends of the select switches are correspondingly connected to the same output node of the phase clock generation module; one static end of each of the select switches is connected to the power supply and the other static end is connected to a grounding end; a response control end of each of the select switches is connected to an output end of the acceleration response control module; and an input end of the acceleration response control module is connected to the output voltage end.

7. The charge pump circuit according to claim 6 , wherein:
each of the select switches comprises a tenth PMOS transistor, a seventh NMOS transistor, an OR-gate, an AND-gate, a third phase inverter, at least one eleventh PMOS transistor and at least one eighth NMOS transistor, wherein gates of the tenth PMOS transistor and the seventh NMOS transistor are connected to serve as a clock control end of the select switch, to be connected to one output node of the phase clock generation module; the gates of the tenth PMOS transistor and the seventh NMOS transistor are correspondingly connected to one input end of the OR-gate and one input end of the AND-gate respectively; drains of the tenth PMOS transistor and the seventh NMOS transistor and drains of each of the eleventh PMOS transistors and the corresponding eighth NMOS transistor are mutually connected to serve as the movable end of the select switch, to be connected to the other polar plate of the corresponding capacitor; sources of the tenth PMOS transistor and each of the eleventh PMOS transistors are separately connected to the power supply; sources of the seventh NMOS transistor and each of the eighth NMOS transistors are separately grounded; a gate of each of the eleventh PMOS transistors is conn

Assignees

• Vanchip Tianjin Tech Co Ltd

Inventors

• Gao Chenyang
• Lin Sheng

Classifications

• H02M3/073 Primary

  Charge pumps of the Schenkel-type · CPC title

• H02M1/0043 Primary

  Converters switched with a phase shift, i.e. interleaved (non-isolated DC/DC converters H02M3/1586) · CPC title

• H02M3/07 Primary

  using capacitors charged and discharged alternately by semiconductor devices with control electrode {, e.g. charge pumps} · CPC title

• H02M3/071

  adapted to generate a negative voltage output from a positive voltage source · CPC title

• H03L7/0891

  the up-down pulses controlling source and sink current generators, e.g. a charge pump · CPC title