Semiconductor light-emitting device and semiconductor light-emitting component

Patent metadata

Field	Value
Publication number	US-12230736-B2
Application number	US-202117211331-A
Country	US
Kind code	B2
Filing date	Mar 24, 2021
Priority date	Mar 24, 2020
Publication date	Feb 18, 2025
Grant date	Feb 18, 2025

Abstract

The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

First claim

What is claimed is:

1. A semiconductor light-emitting device, comprising:
a first semiconductor contact layer having a first upper surface comprising a first region and a second region;
a semiconductor light-emitting stack located on the first region and not located on the second region, and comprising an active layer;
a first-conductivity-type contact structure located on the second region and electrically connected to the first semiconductor contact layer;
a second semiconductor contact layer located on the semiconductor light-emitting stack;
a second-conductivity-type contact structure located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer; and
a first electrode pad located on and electrically connected to the first-conductivity-type contact structure;
wherein the first-conductivity-type contact structure has a first side surface, a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface, and the first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device,
wherein the first electrode pad has a first width, the first-conductivity-type contact structure has a second width less than the first width, and the first electrode pad covers the first side surface, and
wherein the first-conductivity-type contact structure has a first top-view area, the first electrode pad has a second top-view area greater than the first top-view area.

2. The semiconductor light-emitting device of claim 1 , further comprising a second electrode pad located on and electrically connected to the second-conductivity-type contact structure.

3. The semiconductor light-emitting device of claim 1 , wherein the second semiconductor contact layer has a third top surface and the first top surface is higher than the third top surface in the cross-sectional view of the semiconductor light-emitting device.

4. The semiconductor light-emitting device of claim 2 , further comprising an electrically insulating layer having a first opening and a second opening, wherein the first-conductivity-type contact structure connects to the first electrode pad through the first opening and the second-conductivity-type contact structure connects to the second electrode pad through the second opening.

5. The semiconductor light-emitting device of claim 1 , wherein the first-conductivity-type contact structure has a first height, the second-conductivity-type contact structure has a second height, and a height difference between the first height and the second height is less than or equal to 10% of the first height.

6. The semiconductor light-emitting device of claim 1 , wherein the semiconductor light-emitting stack comprises a second side surface, the first semiconductor contact layer comprises a third bottom surface and a third side surface which is connected to the second side surface, a first acute angle is formed between a first extension line extending from the second side surface and the third bottom surface, a second acute angle is formed between the third side surface and the third bottom surface in the cross-sectional view of the semiconductor light-emitting device, and the second acute angle is larger than the first acute angle.

7. The semiconductor light-emitting device of claim 1 , wherein the second region surrounds the first region in a top view of the semiconductor light-emitting device.

8. The semiconductor light-emitting device of claim 1 , wherein the first-conductivity-type contact structure is separated from the semiconductor light-emitting stack, and
wherein a horizontal distance between the first-conductivity-type contact structure and the semiconductor light-emitting stack is not less than 1 μm.

9. The semiconductor light-emitting device of claim 1 , wherein the semiconductor light-emitting device has a length L 1 and a width W 1 , and a ratio of the width W 1 and the length L 1 is between 0.2 and 0.8.

10. The semiconductor light-emitting device of claim 1 , wherein the semiconductor light-emitting stack has a first top-view area, the first semiconductor contact layer has a second top-view area, the first top-view area occupies 40% or more and 90% or less of the second top-view area.

11. The semiconductor light-emitting device of claim 1 , wherein the semiconductor light-emitting stack has a first contact surface between the first-conductivity-type contact structure and the first semiconductor contact layer and a second contact surface between the second-conductivity-type contact structure and the second semiconductor contact layer, and a vertical distance between the first contact surface and the second contact surface is less than or equal to 10 μm.

12. The semiconductor light-emitting device of claim 1 , wherein the second semiconductor contact layer include a binary compound semiconductor or a ternary compound semiconductor.

13. The semiconductor light-emitting device of claim 1 , further comprising a substrate under the first semiconductor contact layer, wherein the substrate has a second upper surface comprising a third region and a fourth region, and the first semiconductor contact layer is located on the third region and not located on the fourth region.

14. The semiconductor light-emitting device of claim 1 , wherein the first first-conductivity-type contact structure has a first thickness and the first electrode pad has a second thickness smaller than the first thickness.

15. The semiconductor light-emitting device of claim 2 , wherein the second electrode pad and the first electrode pad have the same area in a top view of the semiconductor light-emitting device.

16. The semiconductor light-emitting device of claim 1 , wherein the semiconductor light-emitting device has a length L 1 less than or equal to 150 μm and a width W 1 less than or equal to 100 μm, and a ratio of the width W 1 and the length L 1 is between 0.2 and 0.8.

17. The semiconductor light-emitting device of claim 2 , wherein the second-conductivity-type contact structure has a third top-view area, the second electrode pad has a fourth top-view area larger than the third top-view area.

18. The semiconductor light-emitting device of claim 2 , wherein the second-conductivity-type contact structure has a fourth side surface, the second electrode pad covers the fourth side surface.

19. The semiconductor light-emitting device of claim 2 , wherein the second electrode pad has a third width, the second-conductivity-type contact structure has a fourth width less than the third width.

20. The semiconductor light-emitting device of claim 4 , wherein the first opening is not overlapped with the first side surface in a vertical direction.

Assignees

• Epistar Corp

Inventors

• Chen Jian-Zhi
• Tseng Yen-Chun
• Kao Hui-Fang
• Chan Yao-Ning
• Lai Yi-Tang
• Chou Yun-Chung
• Lee Shih-Chang
• Ou Chen

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/8314

  extending at least partially onto an outer side surface of the bodies · CPC title