Wafer level analysis for VCSEL screening

Patent metadata

Field	Value
Publication number	US-12224550-B2
Application number	US-202117156902-A
Country	US
Kind code	B2
Filing date	Jan 25, 2021
Priority date	Jan 25, 2021
Publication date	Feb 11, 2025
Grant date	Feb 11, 2025

Abstract

A method and system for analyzing Vertical-Cavity Surface-Emitting Lasers (VCSELs) on a wafer are provided. An illustrative method of is provided that includes: applying a stimulus to each of the plurality of VCSELs on the wafer; measuring, for each of the plurality of VCSELs, two or more VCSEL parameters responsive to the stimulus; correlating the measured two or more VCSEL parameters to define a value of a common performance characteristic; and identifying clusters of VCSELs having similar values of the common performance characteristic. The clusters of VCSELs may be determined to collectively meet or not meet an optical performance requirement defined for the VCSELs on the wafer.

First claim

What is claimed is:

1. A method for binning Vertical-Cavity Surface-Emitting Lasers (VCSELs) having individual performance characteristics on a wafer, the method comprising:
measuring, for each VCSEL on the wafer, two or more VCSEL parameters responsive to Direct Current (DC) or small signal measurement values;
correlating, for each VCSEL on the wafer, the measured two or more VCSEL parameters to define a value of a common performance characteristic, wherein the correlation is indicative of a property of a VCSEL without directly measuring the property;
identifying clusters of VCSELs on the wafer having similar values of the common performance characteristic; and
screening the identified clusters of VCSELs based on one or more conditions associated with a VCSEL optical performance requirement.

2. The method of claim 1 , wherein the small signal measurement values comprise Alternating Current (AC) signals at an operation point in which each VCSEL on the wafer behaves linearly.

3. The method of claim 1 , wherein the value of the common performance characteristic comprises a threshold value.

4. The method of claim 1 , wherein the property includes an aperture diameter of a VCSEL.

5. The method of claim 1 , wherein the value of the common performance characteristic is obtained by correlating an optical power L at operation current (L_op), a threshold current (Ith), and a Slope Efficiency (SE).

6. The method of claim 1 , further comprising:
determining a value of the property associated with a cluster of VCSELs based on the correlation of the measured two or more VCSEL parameters.

7. The method of claim 6 , wherein the value of the property comprises a value for an aperture diameter.

8. The method of claim 6 , wherein the value of the property comprises a value for mirror reflectivity.

9. The method of claim 1 , wherein the one or more conditions comprises a predefined aperture condition, and wherein a screened cluster of VCSELs has at least a minimum probability to meet a corresponding VCSEL optical performance requirement.

10. The method of claim 1 , wherein the one or more conditions comprises a predefined mirror reflectivity condition, and wherein
a screened cluster of VCSELs has at least a minimum probability to meet a corresponding VCSEL optical performance requirement.

11. The method of claim 1 , wherein the VCSEL optical performance requirement comprises at least one of: expected data bit rate; expected bandwidth; expected modulation order; damping factor of relaxation oscillations; overshoots response; settling time; timing jitter; bit error rate; S-parameters; RIN;
and spectral bandwidth.

12. The method of claim 1 , wherein the VCSELs are configured to operate at a bit rate that is greater than 50Gbaud PAM4.

13. The method of claim 1 , wherein the VCSELs are configured to operate using a modulation of PAM4, PAM8, or PAM16.

14. The method of claim 1 , wherein the two or more VCSEL parameters are selected from the group of: an optical power L at operation current (L_op); a threshold current (Ith); a Slope Efficiency (SE); a spectral bandwidth; a photon lifetime; a forward voltage; a resistance; a RIN; and S-parameters.

15. The method of claim 1 , wherein correlating the measured two or more VCSEL parameters to define the value of the common performance characteristic comprises applying a correlation matrix to the measured two or more VCSEL parameters, wherein the correlation matrix expresses the value of the common performance characteristic using a Pearson method.

16. The method of claim 1 , wherein the two or more VCSEL parameters are selected from the group of: an optical power L at operation current (L_op) between 4.05 mW and 4.6 mW; a threshold current (Ith) between 0.8 mA and 1.1 mA; a Slope Efficiency (SE) between 0.56 mW/mA (W/A) and 0.68 mW/mA (W/A); and a spectral bandwidth between 0.7 nm and 1.2 nm.

17. A method for analyzing a plurality of Vertical-Cavity Surface-Emitting Lasers (VCSELs) having individual performance characteristics on a wafer, the method comprising:
applying a stimulus to each of the plurality of VCSELs on the wafer;
measuring, for each of the plurality of VCSELs and with one or more sensors, two or more VCSEL parameters responsive to the stimulus;
correlating, for each VCSEL, the measured two or more VCSEL parameters to define a value of a common performance characteristic, wherein the value of the common performance characteristic comprises an aperture size of a VCSEL;
identifying clusters of VCSELs on the wafer having similar values of the common performance characteristic; and
screening the identified clusters of VCSELs based on one or more conditions associated with a VCSEL optical performance requirement.

18. The method of claim 17 , wherein the stimulus comprises at least one of a Direct Current (DC) input signal and an Alternating Current (AC) signal small enough to cause a VCSEL to behave linearly.

19. The method of claim 17 , wherein the value of the common performance characteristic is obtained by correlating an optical power L at operation current (L_op), a threshold current (Ith), and a Slope Efficiency (SE).

20. A system for analyzing a wafer having Vertical-Cavity Surface-Emitting Lasers (VCSELs), the system comprising:
a VCSEL stimulator that applies a stimulus to at least some VCSELs on the wafer;
one or more sensors that measure, for each of the at least some VCSELs, two or more VCSEL parameters responsive to the stimulus;
a processor; and
memory coupled with the processor that comprises instructions which, when executed by the processor, enable the processor to:
correlate, for each of the at least some VCSELs, the measured two or more VCSEL parameters to define a value of a common performance characteristic, wherein the value of the common performance characteristic comprises an aperture size of a VCSEL;
identify clusters of VCSELs on the wafer that have values of the common performance characteristic within a predefined amount; and
screening the identified clusters of VCSELs based on one or more conditions associated with a VCSEL optical performance requirement.

Assignees

• Mellanox Technologies Ltd

Inventors

• Septon Tali
• Kalifa Itshak
• Mentovich Elad
• Galanty Matan
• Gridish Yaakov
• Shumacher Hanan
• Balakhovski Vadim
• Olmos Juan Jose Vegas

Classifications

• G01R31/2635

  Testing light-emitting diodes, laser diodes or photodiodes · CPC title

• H01S5/0014

  Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R) · CPC title

• H01S5/183

  having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title

• H01S5/0042 Primary

  On wafer testing, e.g. lasers are tested before separating wafer into chips · CPC title