Method for determining aberration sensitivity of patterns

Patent metadata

Field	Value
Publication number	US-12222656-B2
Application number	US-202017638899-A
Country	US
Kind code	B2
Filing date	Aug 21, 2020
Priority date	Sep 3, 2019
Publication date	Feb 11, 2025
Grant date	Feb 11, 2025

Abstract

A method for determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus. The method includes obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus and (ii) a design layout to be printed on a substrate via the patterning apparatus; and determining, via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining, based on the aberration sensitivity map, the process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

First claim

What is claimed is:

1. A method of determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus, the method comprising:
obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus, and (li) a design layout to be printed on a substrate via the patterning apparatus;
determining, via a process computer simulation using the design layout, via the first set of kernels, and via the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to a particular aberration and an interaction between different aberrations; and
determining, based on the aberration sensitivity map, a process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

2. The method of claim 1 , wherein the aberration wavefront is represented by a set of Zernike polynomials, a Bessel function, a normal and complete function set, or a bitmap image.

3. The method of claim 2 , wherein the aberration sensitivity map is a function of the set of Zernike polynomials and a set of Zernike coefficients associated therewith, each Zernike coefficient indicative of an amount of aberration explained by the associated Zernike polynomial.

4. The method of claim 1 , wherein the aberration sensitivity map is a pixelated image, wherein a pixel value is indicative of the aberration sensitivity.

5. The method of claim 1 , wherein the first set of kernels are obtained by eigen decomposition of a first vector associated with a first order aerial image comprising linear aberration terms of the aberration wavefront, wherein:
the first order aerial image is computed by a convolution of a source function, a pupil function, and first order aberrations, the first order aberrations characterizing effects of linear aberration terms,
the source function is a mathematical representation characterizing an illumination of the patterning apparatus, and
the pupil function is another mathematical representation characterizing a lens pupil of the patterning apparatus.

6. The method of claim 1 , wherein the second set of kernels are obtained by eigen decomposition of a vector associated with a second order aerial image comprising second order aberration terms of the aberration wavefront, wherein:
the second order aerial image is computed by a convolution of a source function, a pupil function, and second order aberrations, the second order aberrations characterizing effects of interaction between different aberrations,
the source function is a mathematical representation characterizing an illumination of the patterning apparatus, and
the pupil function is another mathematical representation characterizing a lens pupil of the patterning apparatus.

7. The method of claim 1 , wherein the determining of the aberration sensitivity map comprises:
determining a first order aberration sensitivity map by applying the first set of kernels to the design layout;
determining a second order aberration sensitivity map by applying the second set of kernels to the design layout; and
determining the aberration sensitivity map associated with the aberration wavefront as a sum of the first order aberration sensitivity map and the second order aberration sensitivity map.

8. The method of claim 1 , wherein the first set of kernels and the second set of kernels are dependent on parameters associated with an illumination of the patterning apparatus, a lens pupil of patterning apparatus, and Zernike terms describing the aberration wavefront associated with the patterning apparatus, but independent of a shape of the design layout.

9. The method of claim 1 , wherein the determining of the process window limiting pattern comprises:
determining whether an intensity of a pixel of the aberration sensitivity map crosses a hot spot threshold;
responsive to the intensity breaching the threshold, identifying one or more patterns within the design layout associated with the pixel breaching the threshold; and
categorizing the one or more identified patterns or one or more locations therearound as the process window limiting pattern.

10. The method of claim 9 , wherein a pattern of the one or more patterns comprises a plurality of features and a portion of the pattern is a feature of the plurality of features, and/or
wherein the one or more patterns comprises:
one or more rectilinear mask patterns;
lines and spaces;
one or more contact holes; and/or
one or more curvilinear mask patterns.

11. The method of claim 1 , wherein the process window limiting pattern is determined based on the aberration sensitivity map without tracing a contour of a printed pattern or a simulated pattern, or computing a critical dimension or edge placement error or defect data associated with a printed substrate.

12. The method of claim 1 , further comprising:
determining, based on an unaberrated aerial image and an aberrated aerial image, a Zernike image, wherein the aberrated aerial image is determined based on the first order, the second order or higher order (order >2) sensitivity map;
determining, via principal component analysis of the Zernike image, one or more principal components of the Zernike image, a principal component being a linear combination of Zernike polynomials and associated Zernike coefficients, wherein a value of a Zernike coefficient is indicative of an amount of variation in the Zernike image explained by the associated Zernike polynomial;
selecting, based on at least one of the one or more principal components, one or more patterns associated with relatively a high sensitivity value to a particular Zernike polynomial; and
determining, via executing a source mask optimization or a wavefront optimization process using the selected one or more patterns, one or more illumination parameters, one or more mask parameters and/or one or more wavefront parameters such that a performance metric is improved.

13. The method of claim 12 , wherein the performance metric is a function of critical dimension or an edge placement error associated with the selected one or more patterns.

14. The method of claim 1 , wherein the first set of kernels is a first order aberration sensitivity filter for a given Zernike of a set of Zernike polynomials.

15. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:
obtain (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of a patterning apparatus, and (ii) a design layout to be printed on a substrate via the patterning apparatus;
determine, via a process simulation using the design layout, via the first set of kernels, and via the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to a particular aberration and an interaction between different aberrations; and
determine, based on the aberration sensitivity map, a process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

16. The computer program product of claim 15 , wherein the aberration wavefront is represented by a set of Zerni

Assignees

• Asml Netherlands Bv

Inventors

• Liu Jingjing
• Hsu Duan-Fu Stephen
• Peng Xingyue

Classifications

• G05B2219/45031

  Manufacturing semiconductor wafers · CPC title

• G05B19/4099

  Surface or curve machining, making three-dimensional [3D] objects, e.g. desktop manufacturing · CPC title

• G03F7/70666

  Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system · CPC title

• G03F7/705 Primary

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G03F7/706837

  Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis · CPC title