Organotin precursor compounds

Patent metadata

Field	Value
Publication number	US-12221691-B2
Application number	US-202217992166-A
Country	US
Kind code	B2
Filing date	Nov 22, 2022
Priority date	Nov 24, 2021
Publication date	Feb 11, 2025
Grant date	Feb 11, 2025

Abstract

The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

First claim

What is claimed is:

1. A process for the deposition of a tin-containing film onto a surface of a microelectronic device in a reaction zone, which comprises introducing into the reaction zone, a precursor composition comprising at least one compound chosen from Formula (I):

wherein R 1 is a divalent group chosen from —C(R) 2 —, —CR(X)—, —O—, and —N(R)—,
wherein R is chosen from H and C 1 -C 5 alkyl,
wherein X is chosen from F, Cl, Br, I, —OCH 3 , —OCH 2 CH 3 , —OCH 2 CH 2 CH 3 , and —OCH(CH 3 ) 2 , and
R 2 is chosen from H, —N(R) 2 , and —OR, and —R 1 ;

under vapor deposition conditions.

2. The process of claim 1 , wherein R 1 is a group of the formula —N(R)—.

3. The process of claim 1 , wherein R 2 is a group of the formula —N(R) 2 .

4. The process of claim 1 , wherein the vapor deposition conditions are atomic layer deposition conditions.

5. A process for the deposition of a tin-containing film onto a surface of a microelectronic device in a reaction zone, which comprises introducing into the reaction zone, a precursor composition comprising at least one compound chosen from Formula (I):

wherein R 1 is a divalent group chosen from —C(R) 2 —, —CR(X)—, —O—, and —N(R)—,
wherein R is chosen from H and C 1 -C 5 alkyl,
wherein X is chosen from F, Cl, Br, I, —OCH 3 , —OCH 2 CH 3 , —OCH 2 CH 2 CH 3 , and —OCH(CH 3 ) 2 , and
R 2 is chosen from H, —N(R) 2 , and —OR, and —R 1 ; and
at least one counter-reactant chosen from compounds capable of reacting with —OR and —N(R) 2 ,
under vapor deposition conditions.

6. The process of claim 5 , wherein R 1 is a group of the formula —N(R)—.

7. The process of claim 5 , wherein R 2 is a group of the formula —N(R) 2 .

8. The process of claim 5 , wherein the vapor deposition conditions are atomic layer deposition conditions.

Assignees

• Entegris Inc

Inventors

• Ermert David M
• Kuiper David
• Cameron Thomas M

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F7/2284

  Compounds with one or more Sn-N linkages · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C23C16/407 Primary

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title