System and method for submicron additive manufacturing

Patent metadata

Field	Value
Publication number	US-12208569-B2
Application number	US-202017025505-A
Country	US
Kind code	B2
Filing date	Sep 18, 2020
Priority date	Oct 31, 2017
Publication date	Jan 28, 2025
Grant date	Jan 28, 2025

Abstract

The present disclosure relates to a method for performing an additive manufacturing operation to form a structure by processing a photopolymer resist material. A laser beam is directed at a tunable mask. At least one emergent beam is collected from a plurality of emergent beams emerging from the tunable mask. The at least one emergent beam is collimated to create a collimated beam. Each emergent beam from the tunable mask has a plurality of beam lets of varying or identical intensity, and each beam let emerges from a unique subsection or region of the tunable mask. The collimated beam is focused into a laser beam which is projected as an image plane onto or within the photopolymer resist material, such that the same optical path length is created between the tunable mask and the focused image plane for all optical frequencies of the focused laser beam. The focused laser beam illuminates a select pattern of subsections on the tunable mask for a finite duration of time to cause simultaneous polymerization of select portions of the photopolymer resist material corresponding to the select pattern.

First claim

What is claimed is:

1. A method for performing an additive manufacturing operation to form a structure by processing a photopolymer resist material, the method comprising:
generating a laser beam;
directing the laser beam at a tunable mask;
collecting at least one emergent beam from a plurality of emergent beams emerging from the tunable mask;
the at least one emergent beam being produced by using a controller to control the tunable mask, and wherein the at least one emergent beam includes a plurality of differing images in sequential fashion;
collimating the at least one emergent beam to create a collimated beam, wherein each said emergent beam from the tunable mask comprises a plurality of beamlets of varying or identical intensity, for each one of the plurality of differing images, and wherein each said beamlet emerges from a unique subsection or region of the tunable mask being illuminated by the laser beam;
focusing the collimated beam into a focused laser beam which is projected as a focused image plane onto or within the photopolymer resist material, such that the same optical path length is created between the tunable mask and the focused image plane for all optical frequencies of the focused laser beam; and
illuminating a select pattern of subsections on the tunable mask using the focused laser beam for a finite duration of time, and wherein the focused laser beam illuminates a single layer of the photopolymer resist material using the plurality of differing images to generate a cumulative non-linear exposure dose within the focused image plane for the single layer, to cause selective simultaneous polymerization of select portions of the photopolymer resist material within the focused image plane, representing the single layer, and corresponding to the select pattern, using the projected plurality of differing images;
using an element to redirect at least one different emergent beam which is created by the tunable mask from the plurality of emergent beams but not being used for causing polymerization of the photopolymer resist material from a path of travel of a remainder of the plurality of emergent beams; and
monitoring a power of the at least one different emergent beam which is created by the tunable mask but not used for causing polymerization of the photopolymer resist material.

2. The method of claim 1 , wherein focusing the collimated beam comprises focusing the collimated beam using a collimating optic and one or more focusing elements.

3. The method of claim 1 , wherein the simultaneous polymerization is carried out by selecting a duration of the focused laser beam and an intensity of light of the focused laser beam which, when combined, exceeds a threshold dosage for polymerization of the photopolymer resist material.

4. The method of claim 1 , wherein directing the laser beam at a tunable mask comprises directing the laser beam at a tunable mask which forms a dispersive element.

5. The method of claim 1 , further comprising adjusting a power of the laser beam directed at the tunable mask in proportion to the monitored power of the at least one emergent beam.

6. A method for performing an additive manufacturing operation to form a structure by processing a photopolymer resist material, the method comprising:
generating a laser beam;
directing the laser beam at a tunable mask;
collecting at least one emergent beam from a plurality of emergent beams emerging from the tunable mask;
the at least one emergent beam being produced by using a controller to control the tunable mask, and wherein the at least one emergent beam includes a plurality of differing images in sequential fashion;
collimating the at least one emergent beam to create a collimated beam, wherein each said emergent beam from the tunable mask comprises a plurality of beamlets of varying or identical intensity, for each one of said plurality of differing images, and wherein each said beamlet emerges from a unique subsection or region of the tunable mask being illuminated by the laser beam;
focusing the collimated beam into a focused laser beam which is projected as a focused image plane onto or within a single layer of the photopolymer resist material to be polymerized, such that the same optical path length is created between the tunable mask and the focused image plane for all optical frequencies of the focused laser beam;
selecting a duration of the focused laser beam and an intensity of light of the focused laser beam which, when using the plurality of differing images, generates a cumulative non-linear exposure dose within the single layer representing the focused image plane, which exceeds a threshold dosage for polymerization of the photopolymer resist material, and polymerizes a plurality of select subsections of the photopolymer, using the projected plurality of differing images;
using an element to redirect at least one different emergent beam of the plurality of emergent beams which is created by the tunable mask but not being used for causing polymerization of the photopolymer resist material from a path of travel of a remainder of the plurality of beamlets; and
monitoring a power of the at least one different emergent beam which is created by the tunable mask but not used for causing polymerization of the photopolymer resist material.

7. The method of claim 6 , wherein illuminating and polymerizing the plurality of select subsections comprises illuminating a select pattern of subsections on the tunable mask using the focused laser beam for a finite duration of time to cause simultaneous polymerization of the select subsections of the photopolymer resist material corresponding to the select pattern of subsections of the tunable mask.

8. The method of claim 6 , wherein directing the laser beam at a tunable mask comprises directing the laser beam at a tunable mask which forms a dispersive element.

9. The method of claim 6 , wherein focusing the collimated beam comprises focusing the collimated beam using a collimating optic and one or more focusing elements.

10. The method of claim 6 , further comprising adjusting a power of the laser beam directed at the tunable mask in proportion to the monitored power of the at least one emergent beam.

11. A method for performing an additive manufacturing operation to form a structure by processing a photopolymer resist material, the method comprising:
generating a laser beam;
directing the laser beam at a tunable mask;
collecting at least one emergent beam from a plurality of emergent beams emerging from the tunable mask;
the at least one emergent beam being produced by using a controller to control the tunable mask, and wherein the at least one by emergent beam includes a plurality of differing images in sequential fashion;
collimating the at least one emergent beam to create a collimated beam, wherein each said emergent beam from the tunable mask comprises a plurality of beamlets of varying or identical intensity, for each one of said plurality of differing images, and wherein each said beamlet emerges from a unique subsection or region of the tunable mask being illuminated by the laser beam;
focusing the collimated beam into a focused laser beam which is projected as a focused image plane onto or within a single layer the photopolymer resist material to be polymerized, such that the same optical path length is created between the tunable mask and the focused image plane for all optical frequencies of the focused laser beam;
using the plurality of differing images of the focused laser beam to generate a cumulative non-linear exposure dose within the focused image plane, representing the single layer, which illuminates and polymerizes a plurality of sele

Assignees

• L Livermore Nat Security Llc

Inventors

• Saha Sourabh Kumar
• Panas Robert Matthew
• Chen Shih-Chi

Classifications

• B29C64/393

  for controlling or regulating additive manufacturing processes · CPC title

• B29C64/268

  using laser beams; using electron beams [EB] · CPC title

• G03F7/70291

  Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices · CPC title

• G03F7/70508

  Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus · CPC title

• G03F7/70258

  Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system · CPC title