Radio-frequency assembly with impedance matching filter

Patent metadata

Field	Value
Publication number	US-12206386-B2
Application number	US-202217858189-A
Country	US
Kind code	B2
Filing date	Jul 6, 2022
Priority date	Jul 8, 2021
Publication date	Jan 21, 2025
Grant date	Jan 21, 2025

Abstract

A radio-frequency assembly is described which can be used in communication satellites, for example. The radio-frequency assembly contains a signal source in the form of a semiconductor amplifier output, an impedance matching filter, and a radio-frequency waveguide. The impedance matching filter is connected to the semiconductor amplifier output on the input side and to the radio-frequency waveguide on the output side. The impedance matching filter has a different impedance value on the input side from that on the output side and is matched to the semiconductor amplifier output on the input side and matched to the radio-frequency waveguide on the output side. Consequently, a separate matching circuit between semiconductor amplifier output and radio-frequency waveguide is no longer necessary.

First claim

The invention claimed is:

1. A radio-frequency assembly (“RF assembly”) comprising:
a signal source having a semiconductor amplifier output;
at least one impedance matching filter with a first interface and a second interface; and
a radio-frequency waveguide (“RF waveguide”);
wherein the first interface is communicatively coupled to the signal source for transmitting an RF signal from the signal source to the at least one impedance matching filter;
wherein the second interface is communicatively coupled to the RF waveguide for transmitting the RF signal from the at least one impedance matching filter to the RF waveguide;
wherein a first impedance value at the first interface corresponds to an impedance value at the semiconductor amplifier output;
wherein a second impedance value at the second interface corresponds to an impedance value at the RF waveguide; and
wherein the first impedance value and the second impedance value have different values.

2. The RF assembly according to claim 1 , wherein the semiconductor amplifier output has a lower impedance value than that of the RF waveguide.

3. The RF assembly according to claim 1 , wherein the at least one impedance matching filter is configured as a hollow waveguide with at least one resonator and/or at least one window.

4. The RF assembly according to claim 3 , wherein the at least one impedance matching filter has a plurality of resonators and/or a plurality of windows arranged one behind another along a signal propagation direction in the at least one impedance matching filter.

5. The RF assembly according to claim 4 , wherein the plurality of resonators arranged one behind another along the signal propagation direction differ from one another in terms of their geometry along the signal propagation direction.

6. The RF assembly according to claim 1 , wherein the at least one impedance matching filter is configured as a hollow waveguide with one ridge.

7. The RF assembly according to claim 6 , wherein said one ridge has a plurality of ridge sections having different geometries.

8. The RF assembly according to claim 1 , further comprising a baseplate;
wherein the semiconductor amplifier output is arranged on the baseplate and is galvanically coupled via one or more lines to a transmission path on the baseplate; and
wherein the transmission path has a capacitive coupling element situated opposite the first interface and arranged for capacitively coupling the RF signals into the first interface.

9. The RF assembly according to claim 8 , further comprising a power source, galvanically coupled to the transmission path and embodied for passing an energy supply in the form of direct current (“DC”) onto the transmission path and providing the energy supply via said one or more lines to the semiconductor amplifier output.

10. The RF assembly according to claim 9 , wherein the power source has a DC filter configured to be non-transmissive for the RF signals on the transmission path.

11. The RF assembly according to claim 1 , having a plurality of semiconductor amplifier outputs capacitively coupled to the first interface of the at least one impedance matching filter.

12. The RF assembly according to claim 1 , wherein the at least one impedance matching filter comprises a plurality of impedance matching filters, each of which is coupled to at least one semiconductor amplifier output; and
wherein the plurality of impedance matching filters are coupled to the RF waveguide.

13. The RF assembly according to claim 1 , wherein the RF waveguide is a hollow waveguide, a ridge hollow waveguide, or a coaxial conductor.

14. An antenna arrangement, comprising:
an antenna; and
a plurality of RF assemblies according to claim 1 ;
wherein the plurality of RF assemblies are connected to the antenna to transmit a useful signal to the antenna.

15. A communication satellite, comprising an antenna arrangement according to claim 14 .

Assignees

• Tesat Spacecom Gmbh & Co Kg

Inventors

• Arnold Christian
• Falk Benjamin
• Wochner Maria
• Bartz Sebastian
• Glasbrenner Michael

Classifications

• H04B1/0458

  Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages (matching circuits in general H03H) · CPC title

• H03F3/54

  Amplifiers using transit-time effect in tubes or semiconductor devices (parametric amplifiers H03F7/00; solid state travelling-wave devices H10N70/10) · CPC title

• H03F3/189

  High-frequency amplifiers, e.g. radio frequency amplifiers · CPC title

• H01P1/208

  Cascaded cavities; Cascaded resonators inside a hollow waveguide structure (H01P1/205 takes precedence) · CPC title

• H01P5/082

  Transitions between hollow waveguides of different shape, e.g. between a rectangular and a circular waveguide · CPC title