Positive electrode active material and preparation method thereof, positive electrode plate, secondary battery, battery module, battery pack, and electric apparatus
US-2024429384-A1 · Dec 26, 2024 · US
US12203165B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12203165-B2 |
| Application number | US-202418444891-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2024 |
| Priority date | Dec 21, 2018 |
| Publication date | Jan 21, 2025 |
| Grant date | Jan 21, 2025 |
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The disclosure relates to a process for preparing particulate materials having high electrochemical capacities that are suitable for use as anode active materials in rechargeable metal-ion batteries. In one aspect, the disclosure provides a process for preparing a particulate material comprising a plurality of composite particles. The process includes providing particulate porous carbon frameworks comprising micropores and/or mesopores, wherein the porous carbon frameworks have a D 50 particle diameter of at least 20 μm; depositing an electroactive material selected from silicon and alloys thereof into the micropores and/or mesopores of the porous carbon frameworks using a chemical vapour infiltration process in a fluidised bed reactor, to provide intermediate particles; and comminuting the intermediate particles to provide said composite particles.
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The invention claimed is: 1. A process for preparing composite particles, the process comprising: (a) providing particulate porous carbon frameworks comprising micropores and/or mesopores, wherein the porous carbon frameworks have a D 50 particle diameter of at least 20 μm; (b) depositing an electroactive material selected from silicon, tin, aluminium, germanium and alloys thereof into the micropores and/or mesopores of the porous carbon frameworks using chemical vapour infiltration while the porous carbon frameworks are in a fluidized state, to provide intermediate particles; (c) comminuting the intermediate particles to provide said composite particles; and (d) depositing a conductive coating on the composite particles from step (c) to produce coated composite particles. 2. The process according to claim 1 , wherein the conductive coating is a carbon-based conductive coating. 3. The process according to claim 2 , wherein the carbon-based conductive coating is obtained by chemical vapour deposition. 4. The process according to claim 2 , wherein the carbon-based conductive coating is formed by depositing a solution of carbon-containing compound onto the surface of the particulate material followed by pyrolysis. 5. The process according to claim 1 , wherein the conductive coating has a thickness of 2 to 30 nm. 6. The process according to claim 1 , wherein the BET surface area of the coated composite particles after step (d) is less than 50 m 2 /g. 7. The process according to claim 1 , further comprising transferring the intermediate particles into a comminuting device prior to step (c). 8. The process according to claim 1 , wherein the electroactive material is silicon. 9. The process according to claim 4 , wherein the intermediate particles, the composite particles, and the coated composite particles comprise a plurality of nanoscale electroactive domains located within the micropores and/or mesopores of the porous carbon frameworks. 10. The process according to claim 1 , wherein the chemical vapour infiltration process comprises contacting the porous carbon frameworks with a silicon-containing precursor. 11. The process according to claim 10 , wherein the silicon-containing precursor gas is selected from the group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), tetrasilane (Si 4 H 10 ), chlorosilanes such as trichlorosilane (HSiCl 3 ), methylchlorosilanes such as methyltrichlorosilane (CH 3 SiCl 3 ) or dimethyldichlorosilane ((CH 3 ) 2 SiCl 2 ), preferably wherein the silicon-containing precursor gas is silane. 12. The process according to claim 1 , wherein the chemical vapour infiltration process is performed at a temperature in the range from 200 to 1,250° C. 13. The process according to claim 12 , wherein the chemical vapour infiltration process is performed at a temperature in the range from 200 to 500° C. 14. The process according to claim 13 , wherein the chemical vapour infiltration process is performed at a temperature in the range from 400 to 500° C. 15. The process according to claim 1 , further comprising a step of passivating the intermediate particles. 16. The process according to claim 1 , further comprising a step of passivating the intermediate particles to remove the reactive Si—H bonds. 17. The process according to claim 1 , wherein the step of comminuting the intermediate particles is performed in an inert gas or in an environment where the oxygen concentration is less than 10 vol % oxygen. 18. The process according to claim 1 , wherein the micropores and/or mesopores of the porous carbon frameworks have a total pore volume as measured by gas adsorption of P 1 cm 3 /g, wherein the value of P 1 is in the range from 0.4 to 2.5. 19. The process according to claim 18 , wherein the value of P 1 is in the range from 0.65 to 1.2. 20. The process according to claim 1 , wherein the porous carbon frameworks have D 50 particle diameter of at least 30 μm. 21. The process according to claim 1 , wherein the porous carbon frameworks have a D 50 particle diameter of no more than 1000 μm. 22. The process according to claim 1 , wherein the porous carbon frameworks have a D 10 particle diameter of at least 5 μm and a D 90 particle diameter of no more than 1,500 μm. 23. The process according to claim 1 , wherein the porous carbon frameworks have a BET surface area of at least 750 μm 2 /g and no more than 4,000 μm 2 /g. 24. The process according to claim 1 , wherein the porous carbon frameworks have a PD 50 pore diameter as measured by gas adsorption of no more than 5 nm. 25. The process according to claim 1 , wherein the porous carbon frameworks have a PD 50 pore diameter as measured by gas adsorption of no more than 2 nm. 26. The process according to claim 1 , wherein the porous carbon frameworks have a PD 90 pore diameter as measured by gas adsorption of no more than 10 nm. 27. The process according to claim 1 , wherein the porous carbon frameworks have a volume fraction of micropores as measured by gas adsorption of greater than 0.5. 28. The process according to claim 1 , wherein the composite particles have a D 50 particle diameter in the range from 0.5 to 20 μm. 29. The process according to claim 1 , wherein the composite particles have a D 50 particle diameter in the range from 0.5 to 8 μm. 30. The process according to claim 4 , wherein the composite particles have a D 10 particle diameter of at least 0.2 μm and a D 90 particle diameter of no more than 80 μm. 31. The process according to claim 1 , wherein the composite particles have a particle size distribution span of no more than 5. 32. The process according to claim 1 , wherein the electroactive material is silicon, wherein the pore volume of the composite particles is expressed as P 1 cm 3 /g, and wherein the weight ratio, for the composite particles, of silicon to the porous carbon framework in the composite particles is in the range from [0.5×P 1 to 2.2×P 1 ]:1. 33. The process according to claim 1 , wherein the electroactive material is silicon, and wherein the composite particles comprise 30 to 80 wt % silicon. 34. The process according to claim 1 , wherein the composite particles comprise no more than 10 wt % oxygen. 35. A particulate material comprising the coated composite particles obtainable by the process according to claim 1 .
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