Gene sequencing structure, gene sequencing device and gene sequencing method

Patent metadata

Field	Value
Publication number	US-12203131-B2
Application number	US-202217580176-A
Country	US
Kind code	B2
Filing date	Jan 20, 2022
Priority date	Nov 18, 2021
Publication date	Jan 21, 2025
Grant date	Jan 21, 2025

Abstract

A gene sequencing structure, a gene sequencing device and a gene sequencing method are provided. The gene sequencing structure includes a substrate, a thin-film transistor array layer located on the substrate and including thin-film transistors that include a first electrode, and a second electrode; an ion-sensitive layer located on a side of the semiconductor layer away from the substrate; a micro-hole layer located on a side of the ion-sensitive layer away from the substrate, including a through-hole passing through the micro-hole layer, at least partially overlapping the semiconductor layer, and used for receiving a to-be-tested single-stranded nucleic acid inside; a conductive structure, located on a side of the layer away from the substrate and electrically connected to the first electrode or the second electrode; and a detection chip, located on a side of the conductive structure away from the substrate and electrically connected to the conductive structure.

First claim

What is claimed is:

1. A gene sequencing structure, comprising:
a substrate;
a thin-film transistor array layer, located on a side of the substrate, wherein the thin-film transistor array layer includes a plurality of thin-film transistors, each of the plurality of thin-film transistors includes a first electrode, a second electrode, a third electrode, and a semiconductor layer, the first electrode and the second electrode are spaced apart and located in a same layer, the semiconductor layer is located on a side of the first electrode and the second electrode adjacent to the substrate, the semiconductor layer at least partially overlaps the first electrode and the second electrode, respectively, the semiconductor layer at least partially overlaps the third electrode, and an insulation layer is disposed between the semiconductor layer and the third electrode;
an ion-sensitive layer, located on a side of the semiconductor layer away from the substrate;
a micro-hole layer, located on a side of the ion-sensitive layer away from the substrate, wherein the micro-hole layer includes a through-hole, the through-hole passes through the micro-hole layer in a direction perpendicular to the substrate, the through-hole at least partially overlaps the semiconductor layer, and the through-hole is used for receiving a to-be-tested single-stranded nucleic acid;
a conductive structure, located on a side of the micro-hole layer away from the substrate, wherein the conductive structure is electrically connected to the first electrode or the second electrode; and
a detection chip, located on a side of the conductive structure away from the substrate, and electrically connected to the conductive structure.

2. The gene sequencing structure according to claim 1 , further comprising:
an output detection terminal,
wherein:
the output detection terminal is disposed between the conductive structure and one of the first electrode and the second electrode; and
the conductive structure is electrically connected to one of the first electrode and the second electrode through the output detection terminal.

3. The gene sequencing structure according to claim 2 , wherein:
the output detection terminal includes a first branch and a second branch;
the first branch is located on a side of the micro-hole layer away from the substrate and the first branch is in contact with the conductive structure; and
the second branch passes through the micro-hole layer, is partially located on the ion-sensitive layer, and is in contact with the first electrode or the second electrode.

4. The gene sequencing structure according to claim 1 , further comprising:
a counter substrate, disposed on a side of the conductive structure away from the substrate,
wherein:
the detection chip is located on a side of the counter substrate away from the conductive structure;
the counter substrate includes a plurality of conductive hole structures;
the plurality of conductive hole structures are electrically connected to the conductive structure; and
the detection chip is electrically connected with the plurality of conductive hole structures through first signal wirings.

5. The gene sequencing structure according to claim 4 , further comprising:
an encapsulation structure, located on side surfaces of a stacked structure having the substrate, the thin-film transistor array layer, the ion-sensitive layer, the micro-hole layer, the conductive structure, and the counter substrate.

6. The gene sequencing structure according to claim 1 , further comprising:
a counter substrate, located on a side of the conductive structure away from the substrate;
wherein:
the detection chip is located on a side of the counter substrate adjacent to the conductive structure; and
the detection chip and the conductive structure are electrically connected through a plurality of second signal wirings.

7. The gene sequencing structure according to claim 6 , wherein:
the plurality of second signal wirings are disposed in a first insulation layer.

8. The gene sequencing structure according to claim 6 , further comprising:
an encapsulation structure, located on side surfaces of a stacked structure having the substrate, the thin-film transistor array layer, the ion-sensitive layer, the micro-hole layer, the conductive structure, the detection chip, and the counter substrate.

9. The gene sequencing structure according to claim 8 , wherein the encapsulation structure comprises:
a plurality of openings.

10. The gene sequencing structure according to claim 1 , wherein:
a diameter of the through-hole is in a range of approximately 3 μm-6 μm.

11. The gene sequencing structure according to claim 1 , wherein:
in a direction perpendicular to the substrate, a height of the conductive structure is in a range of approximately 3 μm-5 μm.

12. The gene sequencing structure according to claim 1 , wherein:
the conductive structure is made of electroplated copper.

13. The gene sequencing structure according to claim 1 , wherein:
the thin-film transistor is a bottom-gated structure.

14. The gene sequencing structure according to claim 1 , wherein:
the ion-sensitive layer is made of one of silicon nitride and silicon oxide.

15. A gene sequencing device, comprising:
a plurality of gene sequencing structures,
wherein each of the plurality of gene sequencing structures includes:
a substrate;
a thin-film transistor array layer, located on a side of the substrate, wherein the thin-film transistor array layer includes a plurality of thin-film transistors, each of the plurality of thin-film transistors includes a first electrode, a second electrode, a third electrode, and a semiconductor layer, the first electrode and the second electrode are spaced apart and located in a same layer, the semiconductor layer is located on a side of the first electrode and the second electrode adjacent to the substrate, the semiconductor layer at least partially overlaps the first electrode and the second electrode, respectively, the semiconductor layer at least partially overlaps the third electrode, and an insulation layer is disposed between the semiconductor layer and the third electrode;
an ion-sensitive layer, located on a side of the semiconductor layer away from the substrate;
a microporous layer, located on a side of the ion-sensitive layer away from the substrate, wherein the micro-hole layer includes a through-hole, the through-hole passes through the micro-hole layer in a direction perpendicular to the substrate, the through-hole at least partially overlaps the semiconductor layer, and the through-hole is used for placing a to-be-tested single-stranded nucleic acid inside;
a conductive structure, located on a side of the micro-hole layer away from the substrate, wherein the conductive structure is electrically connected to the first electrode or the second electrode; and
a detection chip, located on a side of the conductive structure away from the substrate, and electrically connected to the conductive structure.

16. A gene sequencing method, comprising:
providing a gene sequencing structure, including:
a substrate;
a thin-film transistor array layer, located on a side of the substrate, wherein the thin-film transistor array layer includes a plurality of thin-film transistors, each of the plurality of thin-film transistors includes a first electrode, a second electrode, a third electrode, and a semiconductor layer, the first electrode and the second electrode are spaced apart and located in a same layer, the semiconductor layer is located on a side of the first ele

Assignees

• Shanghai Tianma Micro Elect Co

Inventors

• Lin Baiquan
• Xi Kerui
• Zhang Kaidi
• Li Wei
• Bai Yunfei
• Su Ping
• Ouyang Junting

Classifications

• G01N27/4145

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title

• C12Q1/6874

  involving nucleic acid arrays, e.g. sequencing by hybridisation · CPC title

• C12Q1/6869 Primary

  Methods for sequencing · CPC title

• C12Q1/6825 Primary

  Nucleic acid detection involving sensors · CPC title