Cmos-compatible protonic resistive devices
US-2022209107-A1 · Jun 30, 2022 · US
Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogen
US12201040B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12201040-B2 |
| Application number | US-202117399437-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 11, 2021 |
| Priority date | Feb 22, 2021 |
| Publication date | Jan 14, 2025 |
| Grant date | Jan 14, 2025 |
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- Title
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Abstract
Official abstract text for this publication.
An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer that is capable of receiving hydrogen, disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, a hydrogen source layer disposed on the proton conductive layer, and a gate electrode layer disposed on the hydrogen source layer.
First claim
Opening claim text (preview).
What is claimed is: 1. An electronic device comprising: a substrate; a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate; a channel layer that is capable of receiving hydrogen, disposed between the source electrode layer and the drain electrode layer over the substrate; a proton conductive layer disposed on the channel layer; a hydrogen source layer disposed on the proton conductive layer; and a gate electrode layer disposed on the hydrogen source layer, an upper surface of the source electrode layer, an interface between the channel layer and the proton conductive layer, and an upper surface of the drain electrode layer are located at the same level from the substrate, wherein the proton conductive layer is disposed to contact the source electrode layer, the channel layer, and the drain electrode layer directly. 2. The electronic device of claim 1 , wherein the source electrode layer and the drain electrode layer are disposed on the same plane. 3. The electronic device of claim 1 , wherein the proton conductive layer is disposed to be spaced apart from the source electrode layer and the drain electrode layer. 4. The electronic device of claim 1 , wherein the channel layer includes a metal and wherein the hydrogen is disposed in an interstitial site of a crystal lattice of the metal. 5. The electronic device of claim 1 , wherein the channel layer includes a metal that forms a metal hydride. 6. The electronic device of claim 1 , wherein the channel layer includes at least one of palladium (Pd), magnesium (Mg), and yttrium (Y). 7. The electronic device of claim 1 , wherein the proton conductive layer includes at least one selected from the group consisting of proton exchange polymer, metal-organic framework (MOF), covalent-organic framework (COF), sulfonated graphene, and polymer-graphene composites. 8. The electronic device of claim 1 , wherein the hydrogen source layer includes a metal hydride or a hydrogen-containing semiconductor. 9. The electronic device of claim 1 , wherein the channel layer has a hydrogen concentration that varies with a voltage applied to the gate electrode layer. 10. The electronic device of claim 1 , wherein the channel layer has an electrical resistance that varies according to the concentration of the received hydrogen. 11. The electronic device of claim 10 , wherein the channel layer has an electrical resistance that increases as the concentration of the received hydrogen increases.
Assignees
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Classifications
- H10N70/245Primary
the species being metal cations, e.g. programmable metallization cells · CPC title
Oxides or nitrides · CPC title
adapted for supplying ionic species · CPC title
- H10N70/253Primary
having three or more electrodes, e.g. transistor-like devices · CPC title
Switching materials · CPC title
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Frequently asked questions
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- What does patent US12201040B2 cover?
- An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer that is capable of receiving hydrogen, disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, a hydrogen source laye…
- Who is the assignee on this patent?
- Sk Hynix Inc
- What technology area does this patent fall under?
- Primary CPC classification H10N70/245. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 14 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).