Optical semiconductor element

Patent metadata

Field	Value
Publication number	US-12199210-B2
Application number	US-202217965090-A
Country	US
Kind code	B2
Filing date	Oct 13, 2022
Priority date	Oct 18, 2021
Publication date	Jan 14, 2025
Grant date	Jan 14, 2025

Abstract

An optical semiconductor element includes a substrate and a plurality of cells. Each cell includes an optical layer, a first semiconductor layer, and a second semiconductor layer. The plurality of cells include a first cell and a second cell. The second semiconductor layer of the first cell and the first semiconductor layer of the second cell are electrically connected to each other by a first connection portion of a first wiring portion. The first wiring portion has a first extending portion that extends from the first connection portion so as to surround four side portions of the optical layer of the first cell. The optical layer is an active layer that generates light having a central wavelength of 3 μm or more and 10 μm or less or an absorption layer having a maximum sensitivity wavelength of 3 μm or more and 10 μm or less.

First claim

What is claimed is:

1. An optical semiconductor element, comprising:
a substrate; and
a plurality of cells formed on the substrate,
wherein each of the plurality of cells includes an optical layer that is an active layer for generating light or an absorption layer for absorbing light, a first semiconductor layer arranged on a side opposite to the substrate with respect to the optical layer, and a second semiconductor layer arranged on a side of the substrate with respect to the optical layer,
the optical layer is formed in a rectangular shape when viewed from a thickness direction of the substrate, and has four side portions,
the plurality of cells include a first cell and a second cell, and the second semiconductor layer of the first cell and the first semiconductor layer of the second cell are electrically connected to each other by a first connection portion of a first wiring portion,
the first wiring portion includes a first extending portion that extends from the first connection portion so as to surround the four side portions of the optical layer of the first cell when viewed from the thickness direction of the substrate,
the optical layer is the active layer that generates light having a central wavelength of 3 um or more and 10 μm or less or the absorption layer having a maximum sensitivity wavelength of 3 μm or more and 10 μm or less,
the substrate has a light transmission property, and
when the optical layer is the active layer, light generated in the optical layer is emitted through the substrate, and when the optical layer is the absorption layer, light incident through the substrate is absorbed by the optical layer.

2. The optical semiconductor element according to claim 1 ,
wherein the plurality of cells further include a third cell,
the second semiconductor layer of the second cell and the first semiconductor layer of the third cell are electrically connected to each other by a second connection portion of a second wiring portion,
the second wiring portion includes a second extending portion that extends from the second connection portion so as to surround the four side portions of the optical layer of the second cell when viewed from the thickness direction of the substrate, and
the first connection portion of the first wiring portion does not overlap the second extending portion of the second wiring portion when viewed from the thickness direction of the substrate.

3. The optical semiconductor element according to claim 1 ,
wherein the plurality of cells are electrically connected in series.

4. The optical semiconductor element according to claim 3 ,
wherein the plurality of cells include a first termination cell arranged at one end in an electrical series connection and a second termination cell arranged at the other end in the electrical series connection,
a first electrode electrically connected to the first semiconductor layer of the first termination cell is arranged on a top surface of the first termination cell, and
a second electrode electrically connected to the second semiconductor layer of the second termination cell is arranged on a top surface of the second termination cell.

5. The optical semiconductor element according to claim 4 ,
wherein the second electrode includes a third extending portion that extends so as to surround the four side portions of the optical layer of the second termination cell when viewed from the thickness direction of the substrate.

6. The optical semiconductor element according to claim 4 ,
wherein the plurality of cells include a dummy pad cell, and
a dummy electrode electrically separated from the optical layer, the first semiconductor layer, and the second semiconductor layer of the dummy pad cell is arranged on a top surface of the dummy pad cell.

7. The optical semiconductor element according to claim 1 ,
wherein the optical layer is formed of a material containing Sb.

8. The optical semiconductor element according to claim 1 ,
wherein the optical layer is formed of a material containing Sb and In.

9. The optical semiconductor element according to claim 1 ,
wherein the optical layer is formed of a material containing at least one of InAsSb, AlInSb, and AlInAs.

10. The optical semiconductor element according to claim 1 ,
wherein the first extending portion includes four portions extending straight along the four side portions, respectively, when viewed from the thickness direction of the substrate.

11. The optical semiconductor element according to claim 1 , further comprising a termination cell electrically connected to a cell of the plurality of cells which is arranged at one end in an electrical connection of the plurality of cells,
wherein the termination cell includes at least the second semiconductor layer arranged on the substrate, and
an electrode for electrical connection with an outside is arranged on a top surface of the termination cell.

12. The optical semiconductor element according to claim 11 ,
wherein the termination cell includes the optical layer, the first semiconductor layer, and the second semiconductor layer, and
the electrode is electrically connected to the second semiconductor layer of the termination cell.

13. The optical semiconductor element according to claim 11 ,
wherein the termination cell includes the second semiconductor layer only, and
the electrode is electrically connected to the second semiconductor layer of the termination cell.

14. The optical semiconductor element according to claim 1 , further comprising an electrode arranged on the substrate,
wherein the electrode is electrically connected to a cell of the plurality of cells which is arranged at one end in an electrical connection of the plurality of cells.

15. An optical semiconductor element, comprising:
a substrate; and
a plurality of cells formed on the substrate,
wherein each of the plurality of cells includes an optical layer that is an active layer for generating light or an absorption layer for absorbing light, a first semiconductor layer arranged on a side opposite to the substrate with respect to the optical layer, and a second semiconductor layer arranged on a side of the substrate with respect to the optical layer,
the optical layer is formed in a rectangular shape when viewed from a thickness direction of the substrate, and has four side portions,
the plurality of cells include a first cell and a second cell, and the second semiconductor layer of the first cell and the first semiconductor layer of the second cell are electrically connected to each other by a first connection portion of a first wiring portion,
the first wiring portion includes a first extending portion that extends from the first connection portion so as to surround the four side portions of the optical layer of the first cell when viewed from the thickness direction of the substrate,
the optical layer is the active layer that generates light having a central wavelength of 3 μm or more and 10 μm or less or the absorption layer having a maximum sensitivity wavelength of 3 um or more and 10 μm or less,
the plurality of cells are electrically connected in series,
the plurality of cells include a first termination cell arranged at one end in an electrical series connection and a second termination cell arranged at the other end in the electrical series connection,
a first electrode electrically connected to the first semiconductor layer of the first termination cell is arranged on a top surface of the first termination cell,
a second electrode electrically connected to the second semiconductor layer of the second terminatio

Assignees

• Hamamatsu Photonics Kk

Inventors

• YANAI Takahide
• Iida Daisuke

Classifications

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/832

  characterised by their material · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10F30/2235

  the devices comprising Group IV amorphous materials · CPC title