Method of forming semiconductor device having carbon nanotube

Patent metadata

Field	Value
Publication number	US-12193318-B2
Application number	US-202217688259-A
Country	US
Kind code	B2
Filing date	Mar 7, 2022
Priority date	Apr 18, 2019
Publication date	Jan 7, 2025
Grant date	Jan 7, 2025

Abstract

A method includes placing a first charged metal dot on a first position of a surface of a semiconductor substrate. A first charged region is formed on a second position of the surface of the semiconductor substrate. A precursor gas is flowed along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate. A dielectric layer is deposited to cover the first CNT and the semiconductor substrate. A second charged metal dot is placed on a third position of a surface of the dielectric layer. A second charged region is formed on a fourth position of the surface of the dielectric layer. The precursor gas is flowed along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second CNT on the first CNT.

First claim

What is claimed is:

1. A method, comprising:
flowing a metal complex-containing precursor gas comprising a metal ion toward a top surface of an insulating layer, wherein the metal complex-containing precursor gas comprises trimethylgallium (TMGa, Ga(CH 3 ) 3 ), triethylgallium (TEGa, Ga(C 2 H 5 ) 3 , (CH 3 ) 3 Pt(CpCH 3 ), W(CO) 6 or Co 2 (CO) 9 ;
injecting an electron beam onto the top surface of the insulating layer such that the metal ion is pushed onto the top surface of the insulating layer by the electron beam and has a first charge type;
forming a charged region on the insulating layer and spaced apart from the metal ion;
flowing a precursor gas onto the insulating layer in a direction from the metal ion toward the charged region to form a first carbon nanotube (CNT) on the insulating layer, wherein the metal ion is at an end of the first CNT facing the charged region;
after flowing the precursor gas onto the insulating layer in the direction from the metal ion toward the charged region to form the first CNT on the insulating layer, changing the first charge type to a second charge type opposite to the first charge type, the first charge type is positive, and the second charge type is negative; and
flowing the precursor gas to continue growth of the first CNT.

2. The method of claim 1 , wherein forming the charged region comprises:
moving the insulating layer relative to an electron beam source used to inject the electron beam; and
injecting the electron beam onto the top surface of the insulating layer after moving the insulating layer.

3. The method of claim 1 , wherein a voltage of the electron beam is from about 5 kV to about 30 kV.

4. The method of claim 1 , wherein a current of the electron beam is from about 7.7 pA to a about 1.6 nA.

5. The method of claim 1 , wherein a size of the metal ion is in a range of about 1 nm to about 3 nm.

6. The method of claim 1 , further comprising:
forming a source electrode and a drain electrode on opposite sides of the first CNT.

7. The method of claim 6 , further comprising:
etching the insulating layer by using the source electrode and the drain electrode as masks to suspend the first CNT.

8. The method of claim 1 , wherein the precursor gas and the metal complex-containing precursor gas comprise different compositions.

9. The method of claim 1 , wherein flowing the precursor gas onto the insulating layer in the direction from the metal ion toward the charged region to form the first CNT on the insulating layer is performed after forming the charged region on the insulating layer and spaced apart from the metal ion.

10. A method, comprising:
flowing a metal complex-containing precursor gas comprising a metal ion toward a surface of an insulating layer, wherein the metal complex-containing precursor gas comprises trimethylgallium (TMGa, Ga(CH 3 ) 3 ), triethylgallium (TEGa, Ga(C 2 H 5 ) 3 , (CH 3 ) 3 Pt(CpCH 3 ), W(CO) 6 or Co 2 (CO) 9 ;
injecting an electron beam onto the surface of the insulating layer such that the metal ion is pushed onto a first position of the surface of the insulating layer by the electron beam to form a charged metal dot, wherein the charged metal dot has a first charge type;
forming a charged region on a second position of the surface of the insulating layer, wherein charges in the charged region is greater than charges of the charged metal dot;
after forming the charged region on the second position of the surface of the insulating layer, growing a first carbon nanotube (CNT) on the surface of the insulating layer, such that the first CNT touches the first position and the charged metal dot but spaced apart from the second position;
after growing the first CNT on the surface of the insulating layer, changing the first charge type to a second charge type opposite to the first charge type, the first charge type is positive, and the second charge type is negative; and
flowing a carbon-containing gas to continue growth of the first CNT.

11. The method of claim 10 , further comprising:
after growing the first CNT, injecting an electron beam onto the charged metal dot to promote negative charges on the charged metal dot while remains a net charge of the first CNT positive.

12. The method of claim 10 , wherein growing the first CNT is under a temperature from about 900° C. to about 950° C.

13. The method of claim 10 , further comprising etching the charged metal dot before growing the first CNT.

14. The method of claim 10 , wherein after growing the first CNT on the surface of the insulating layer, the charged metal dot is between the first CNT and the charged region.

15. The method of claim 10 , wherein during growing the first CNT on the surface of the insulating layer, the charged metal dot moves toward the charged region.

16. The method of claim 10 , wherein forming the charged region on the second position of the surface of the insulating layer comprises:
injecting an electron beam onto the insulating layer.

17. The method of claim 10 , wherein the carbon-containing gas includes methane, ethylene, acetylene, benzene, xylene, cyclohexane, fullerene, or naphthalene.

18. A method, comprising:
flowing a metal complex-containing precursor gas comprising a metal ion toward a surface of an insulating layer, wherein the metal complex-containing precursor gas comprises trimethylgallium (TMGa, Ga(CH 3 ) 3 ), triethylgallium (TEGa, Ga(C 2 H 5 ) 3 , (CH 3 ) 3 Pt(CpCH 3 ), W(CO) 6 or Co 2 (CO) 9 ;
injecting an electron beam onto the surface of the insulating layer such that the metal ion is pushed onto a first position of the surface of the insulating layer by the electron beam to form a charged metal dot, wherein the charged metal dot has a first charge type;
forming a charged region on the surface of the insulating layer and spaced apart from the charged metal dot, wherein the charged region has a second charge type opposite to the first charge type to establish an electric field;
flowing a carbon-containing gas along the electric field so as to grow a carbon nanotube on the insulating layer, wherein during growing the carbon nanotube on the insulating layer, the charged metal dot moves toward the charged region;
after flowing the carbon-containing gas along the electric field so as to grow the carbon nanotube on the insulating layer, changing the first charge type to a third charge type opposite to the first charge type, the first charge type is positive, and the third charge type is negative; and
flowing the carbon-containing gas to continue growth of the carbon nanotube.

19. The method of claim 18 , wherein forming the charged region on the surface of the insulating layer is performed using an electron beam technique.

20. The method of claim 18 , wherein after flowing the carbon-containing gas along the electric field so as to grow the carbon nanotube on the insulating layer, the charged metal dot is between the carbon nanotube and the charged region.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Holland Martin Christopher
• Vasen Timothy
• Duriez Blandine

Classifications

• H10K71/10

  Deposition of organic active material · CPC title

• H10K10/484

  characterised by the channel regions · CPC title

• H10K10/84

  Ohmic electrodes, e.g. source or drain electrodes · CPC title

• H10K10/481

  characterised by the gate conductors · CPC title

• C30B25/02

  Epitaxial-layer growth · CPC title