Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-12191628-B2
Application number	US-201917422351-A
Country	US
Kind code	B2
Filing date	Dec 6, 2019
Priority date	Feb 4, 2019
Publication date	Jan 7, 2025
Grant date	Jan 7, 2025

Abstract

There is provided a semiconductor light emitting device that allows the internal resistance to be improved. A semiconductor light emitting device according to an embodiment of the present disclosure includes: a light emitting element; a first housing member and a second housing member at least one of which has a wiring structure; and an electrically conductive bonding section. The first housing member and the second housing member house the light emitting element. The wiring structure electrically couples the light emitting element and an outside. The electrically conductive bonding section bonds the first housing member and the second housing member. The electrically conductive bonding section is electrically coupled to the wiring structure.

First claim

The invention claimed is:

1. A semiconductor light emitting device comprising:
a light emitting element;
a first housing member and a second housing member at least one of which has a wiring structure, the first housing member and the second housing member housing the light emitting element, the wiring structure electrically coupling the light emitting element and an outside; and
an electrically conductive bonding section that bonds the first housing member and the second housing member, the electrically conductive bonding section being electrically coupled to the wiring structure, wherein
the first housing member includes a first recessed section, a first layer, and a second layer, the first recessed section forming a housing space in which the light emitting element is housed, the first layer being included in a bottom surface of the first recessed section, the second layer being included in a side surface of the first recessed section,
one or more first metal patterns are formed on the first layer,
one or more second metal patterns are formed on the second layer, the one or more second metal patterns being electrically coupled to at least a portion of the one or more first metal patterns,
the second layer includes a bonding layer and an intermediate layer, the bonding layer being bonded to the second housing member, the intermediate layer being disposed between the bonding layer and the first layer,
the one or more second metal patterns are formed on each of the bonding layer and the intermediate layer, and
the one or more second metal patterns formed on the bonding layer include an electrode extraction section, the electrode extraction section being electrically coupled to an electrode of the light emitting element.

2. The semiconductor light emitting device according to claim 1 , wherein the one or more first metal patterns and the one or more second metal patterns are electrically coupled through through vias, the through vias penetrating the second layer.

3. The semiconductor light emitting device according to claim 1 , wherein at least a portion of the one or more second metal patterns formed on the bonding layer is included in the electrically conductive bonding section.

4. The semiconductor light emitting device according to claim 1 , wherein the electrically conductive bonding section and the electrode extraction section are electrically coupled.

5. The semiconductor light emitting device according to claim 1 , wherein
the first housing member and the second housing member are bonded with solder interposed in between, and
the solder is included in the electrically conductive bonding section.

6. The semiconductor light emitting device according to claim 1 , wherein the second housing member includes a second recessed section, the second recessed section forming a housing space in which the light emitting element is housed.

7. The semiconductor light emitting device according to claim 1 , wherein
the second housing member has light transmissivity, and
light emitted from the light emitting element is outputted to the outside through the second housing member.

8. The semiconductor light emitting device according to claim 7 , wherein
the second housing member has a light emitting surface on an opposite side to a bonded surface to the first housing member, and
the light emitting surface has a lens shape.

9. The semiconductor light emitting device according to claim 1 , wherein
the first housing member has light transmissivity on at least a portion of a side surface included in the first recessed section, and
light emitted from the light emitting element is emitted to the outside through the side surface.

10. The semiconductor light emitting device according to claim 1 , further comprising a reflecting member that reflects light emitted from the light emitting element, wherein
the reflecting member is housed in the first recessed section along with the light emitting element.

11. The semiconductor light emitting device according to claim 1 , further comprising a submount, wherein
the submount is disposed between the light emitting element and the first housing member.

12. The semiconductor light emitting device according to claim 11 , wherein the submount has electrical conductivity.

13. The semiconductor light emitting device according to claim 1 , wherein the light emitting element includes a semiconductor laser.

14. The semiconductor light emitting device according to claim 13 , wherein the semiconductor laser includes a gallium nitride (GaN)-based semiconductor.

15. The semiconductor light emitting device according to claim 1 , further comprising a plurality of light emitting elements which include the light emitting element, wherein the light emitting elements are configured to emit light having wavelengths different from each other.

16. The semiconductor light emitting device according to claim 10 , wherein the reflecting member includes a mirror.

Assignees

• Sony Group Corp

Inventors

• Takiguchi Yoshiro
• Motobayashi Hisayoshi
• Miyahara Hiroyuki
• Murayama Masahiro
• Kawanishi Hidekazu

Classifications

• H10W76/10

  Containers or parts thereof · CPC title

• H01S5/02345

  Wire-bonding · CPC title

• H01S5/02208

  characterised by the shape of the housings · CPC title

• H01S5/02255 Primary

  using beam deflecting elements · CPC title

• H01S5/4093

  Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion · CPC title