Spintronic device comprising dual FGL and dual SPL to reduce perpendicular field at writing location

Patent metadata

Field	Value
Publication number	US-12190920-B2
Application number	US-202318226111-A
Country	US
Kind code	B2
Filing date	Jul 25, 2023
Priority date	Nov 1, 2022
Publication date	Jan 7, 2025
Grant date	Jan 7, 2025

Abstract

The present disclosure is generally related to a magnetic recording device comprising a magnetic recording head. The magnetic recording head comprises a main pole, a hot seed layer, and a spintronic device disposed between the main pole and the hot seed layer. The spintronic device comprises two field generation layers (FGLs), two spin polarization layers (SPLs), and two spin kill layers. The second SPL of the spintronic device drives the second FGL. The spintronic device further comprises one or more optional thin negative beta material layers, such as layers comprising FeCr, disposed in contact with at least one of the spin kill layers. When electric current is applied, the spin kill layers and optional negative beta material layers eliminate or reduce any spin torque between the FGLs and the SPLs.

First claim

What is claimed is:

1. A magnetic recording head comprising:
a shield;
a main pole; and
a spintronic device disposed between the shield and the main pole, the spintronic device comprising:
a first spin kill layer disposed over the main pole;
a first spin polarization layer disposed over the first spin kill layer;
a first field generation layer disposed over the first spin polarization layer;
a second spin kill layer disposed over the first field generation layer;
a second spin polarization layer disposed over the second spin kill layer;
a second field generation layer disposed between the second spin polarization layer and the shield; and
one or more negative beta material layers disposed between the main pole and the second spin polarization layer.

2. The magnetic recording head of claim 1 , wherein the spintronic device further comprises:
a first spacer layer disposed between the first field generation layer and the first spin polarization layer;
a second spacer layer disposed between the second field generation layer and the second spin polarization layer; and
a third spacer layer disposed between the second field generation layer and the shield.

3. The magnetic recording head of claim 2 , wherein the third spacer layer is disposed in contact with a hot seed layer or a hot seed notch, wherein the hot seed layer is disposed on the shield, and wherein the hot seed notch is disposed on the hot seed layer.

4. A magnetic recording device comprising the magnetic recording head of claim 1 , the magnetic recording device configured to flow a current from the main pole through the spintronic device to the shield.

5. A magnetic recording head comprising:
a shield;
a main pole; and
a spintronic device disposed between the shield and the main pole, the spintronic device comprising:
a first spin kill layer disposed over the main pole;
a first spin polarization layer disposed over the first spin kill layer;
a first field generation layer disposed over the first spin polarization layer;
a second spin kill layer disposed over the first field generation layer;
a second spin polarization layer disposed over the second spin kill layer; and
a second field generation layer disposed between the second spin polarization layer and the shield, wherein the spintronic device further comprises a first negative beta material layer disposed between the main pole and the first spin kill layer.

6. The magnetic recording head of claim 5 , wherein the spintronic device further comprises a second negative beta material layer disposed between the first spin kill layer and the first spin polarization layer.

7. The magnetic recording head of claim 6 , wherein the spintronic device further comprises:
a third negative beta material layer disposed between the first field generation layer and the second spin kill layer; and
a fourth negative beta material layer disposed between the second spin polarization layer and the second spin kill layer, wherein the first, second, third, and fourth negative beta material layers each individually has a thickness of about 1 nm.

8. The magnetic recording head of claim 7 , wherein the first, second, third, and fourth negative beta material layers each individually comprises FeCr, and wherein the first and second spin kill layers each individually comprises a non-magnetic material having a resistivity greater than about 100 nano-Ohm·m.

9. A magnetic recording device, comprising:
a magnetic recording head, the magnetic recording head comprising:
a main pole;
a shield; and
a spintronic device disposed between the main pole and the shield, the spintronic device comprising:
a first spin kill layer;
a first spin polarization layer disposed over the first spin kill layer;
a first field generation layer over the first spin polarization layer;
a second spin kill layer disposed over the first field generation layer;
a second spin polarization layer;
a second field generation layer disposed between the second spin polarization layer and the shield; and
one or more negative beta material layers comprising FeCr disposed between the main pole and the second spin polarization layer; and

means for flowing a current from the main pole through the spintronic device to the shield.

10. The magnetic recording device of claim 9 , wherein the one or more negative beta material layers are disposed in contact with either the first spin kill layer or the second spin kill layer.

11. The magnetic recording device of claim 9 , wherein the spintronic device further comprises:
a first spacer layer disposed between the first spin polarization layer and the first field generation layer;
a second spacer layer disposed between the second spin polarization layer and the second field generation layer; and
a third spacer layer disposed between the second field generation layer and the shield, the third spacer layer comprising a seed material.

12. The magnetic recording device of claim 9 , wherein the one or more negative beta material layers each has a thickness of about 1 nm, and wherein the first spin kill layer and the second spin kill layer each individually comprises a non-magnetic material having a resistivity greater than about 100 nano-Ohm·m.

13. The magnetic recording device of claim 9 , wherein the first spin kill layer is disposed over the main pole, the second spin polarization layer is disposed over the second spin kill layer, and the second field generation layer is disposed between the second spin polarization layer and the shield.

Assignees

• Western Digital Tech Inc

Inventors

• Asif Bashir Muhammad
• Goncharov Alexander
• Bai Zhigang
• Shiimoto Masato
• Ding Yunfei

Classifications

• G11B5/235

  Selection of material for gap filler {(G11B5/232 takes precedence)} · CPC title

• G11B2005/0024

  Microwave assisted recording · CPC title

• G11B5/1278

  specially adapted for magnetisations perpendicular to the surface of the record carrier · CPC title

• G11B5/3116 Primary

  Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks (G11B5/3113, G11B5/245 take precedence) · CPC title

• G11B5/314

  where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers (G11B5/3196 takes precedence) · CPC title