System and method for fine granular retention control in storage devices

Patent metadata

Field	Value
Publication number	US-12189977-B2
Application number	US-202117366017-A
Country	US
Kind code	B2
Filing date	Jul 1, 2021
Priority date	May 12, 2021
Publication date	Jan 7, 2025
Grant date	Jan 7, 2025

Abstract

A storage device is disclosed. The storage device may include a host interface to receive a write request from a host, the write request may include a data and a logical address of the data. The storage device may further include a first storage for the data. The storage device may further include a retention period determiner to determine a retention period for the data. The storage device may further include a translation layer to select a physical address in the first storage to store the data based at least in part on the retention period. The storage device may further include a second storage for a logical-to-physical mapping table to map the logical address to the physical address and the retention period. Finally, the storage device may include a controller to program the data into the physical address in the first storage.

First claim

What is claimed is:

1. A storage device, comprising:
a host interface to receive a write request from a host, the write request including a data and a logical address of the data;
a first storage for the data;
a retention period determiner to identify a data set associated with the data and a second data, and to determine a retention period and a number of extensions for the data set;
a translation layer to select a physical address in the first storage to store the data based at least in part on the retention period;
a second storage for a logical-to-physical mapping table to store the logical address associated with the physical address, the retention period, and the number of extensions; and
a controller to program the data into the physical address in the first storage.

2. The storage device according to claim 1 , wherein the translation layer includes an error correction code (ECC) selector to select a first ECC mode from at least the first ECC mode and a second ECC mode based at least in part on the retention period.

3. The storage device according to claim 2 , wherein the logical-to-physical mapping table further maps the logical address to the first ECC mode.

4. The storage device according to claim 1 , wherein:
the first storage includes a Not-AND (NAND) flash storage;
the translation layer includes a programming step voltage selector to select a first programming step voltage from at least the first programming step voltage and a second programming step voltage based at least in part on the retention period; and
the logical-to-physical mapping table further stores the logical address associated with the first programming step voltage.

5. The storage device according to claim 1 , wherein the translation layer includes an extension tracker to track the expiration of the retention period.

6. The storage device according to claim 5 , wherein the extension tracker is configured to automatically renew the retention period based at least in part on the number of extensions.

7. The storage device according to claim 5 , wherein the extension tracker is configured to invalidate the data at the physical address in the first storage based at least in part on expiration of the retention period and the number of extensions.

8. The storage device according to claim 1 , wherein the data set is associated with a range of logical block addresses (LBAs), a namespace identifier, a zone namespace identifier, or a submission queue identifier.

9. The storage device according to claim 1 , wherein the data set is associated with a default retention period, a host identifier, a command identifier, a media access control identifier, or a protocol type.

10. The storage device according to claim 1 , wherein the data set is associated with a date, a clock time, a stream identifier, a storage parameter, or a network parameter.

11. The storage device according to claim 1 , wherein the retention period for the data set is applied to the data and to the second data.

12. An article, comprising a non-transitory storage medium, the non-transitory storage medium having stored thereon instructions that, when executed by a machine, result in:
receiving a write request from a host at a storage device, the write request including a data and a logical address of the data;
identifying a data set including the data and a second data; and
determining a retention period and a number of extensions for the data set;
selecting a physical address in the storage device to store the data based at least in part on the retention period;
updating a logical-to-physical mapping table in the storage device to store the logical address, the physical address, the retention period, and the number of extensions; and
programming the data into the physical address in the storage device.

13. The article according to claim 12 , wherein:
the non-transitory storage medium has stored thereon further instructions that, when executed by the machine, result in selecting a first error correction code (ECC) mode from at least the first ECC mode and a second ECC mode based at least in part on the retention period;
updating the logical-to-physical mapping table in the storage device to store the logical address, the physical address, and the retention period includes updating the logical-to-physical mapping table in the storage device to further store the first ECC mode; and
programming the data into the physical address in the storage device includes programming the data into the physical address in the storage device based at least in part on the first ECC mode.

14. The article according to claim 12 , wherein:
the non-transitory storage medium has stored thereon further instructions that, when executed by the machine, result in selecting a first programming step voltage from at least the first programming step voltage and a second programming step voltage based at least in part on the retention period;
updating the logical-to-physical mapping table in the storage device to store the logical address, the physical address, and the retention period includes updating the logical-to-physical mapping table in the storage device to further store the first programming step voltage; and
programming the data into the physical address in the storage device includes programming the data into the physical address in the storage device based at least in part on the first programming step voltage.

15. The article according to claim 12 , the non-transitory storage medium having stored thereon further instructions that, when executed by the machine, result in:
determining that the retention period has expired; and
automatically renewing the retention period based at least in part on the number of extensions.

16. The article according to claim 12 , the non-transitory storage medium having stored thereon further instructions that, when executed by the machine, result in:
determining that the retention period has expired; and
invalidating the data at the physical address on the storage device based at least in part on the number of extensions.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kachare Ramdas P
• Zhao Dongwan

Classifications

• G06F2212/7211

  Wear leveling · CPC title

• G06F2212/702

  Conservative garbage collection · CPC title

• G06F2212/7205

  Cleaning, compaction, garbage collection, erase control · CPC title

• G06F12/0253

  Garbage collection, i.e. reclamation of unreferenced memory · CPC title

• G06F3/0679

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title