Light sensor

Patent metadata

Field	Value
Publication number	US-12184996-B2
Application number	US-202017775267-A
Country	US
Kind code	B2
Filing date	Nov 5, 2020
Priority date	Nov 8, 2019
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

A light sensor is disclosed. The light sensor comprises a first pixel and a second pixel. The light sensor comprises measurement circuitry. The first pixel is configured to accumulate a first charge and the second pixel is configured to accumulate a second charge when the light sensor is exposed to light. The first pixel is configured to trigger the measurement circuitry to measure the second charge when the first charge reaches a threshold capacity of the first pixel. Also disclosed is an active pixel sensor comprising the light sensor, an image sensor and a device incorporating the light sensor.

First claim

The invention claimed is:

1. A light sensor comprising:
a first pixel;
a second pixel; and measurement circuitry;
wherein the first pixel is configured to accumulate a first charge and the second pixel is configured to accumulate a second charge when the light sensor is exposed to light;
wherein the first pixel is configured to trigger the measurement circuitry to measure the second charge when the first charge reaches a threshold capacity of the first pixel; and
wherein the second pixel is configured to be less sensitive to and/or less exposed to a range of wavelengths of light than the first pixel.

2. The light sensor of claim 1 wherein the first and second pixels each comprise a pinned photodiode.

3. The light sensor of claim 1 wherein the threshold capacity corresponds to a full-well capacity of the first pixel, or to a proportion of the full-well capacity of the first pixel.

4. The light sensor of claim 3 wherein the first and second pixels are configured such that, when the light sensor is exposed to light, the first charge reaches the threshold capacity of the first pixel before the second charge reaches a full-well capacity of the second pixel.

5. The light sensor of claim 1 wherein the second pixel comprises a layer configured to restrict incidence of a range of wavelengths of light upon at least a portion of a light-sensitive section of the second pixel.

6. The light sensor of claim 5 , wherein the layer comprises a material that is substantially opaque or translucent to a range of wavelengths of light that the light-sensitive section of the second pixel is sensitive to.

7. The light sensor of claim 1 , wherein a reset voltage of the first pixel is different to a reset voltage of the second pixel.

8. The light sensor of claim 1 , wherein the first pixel and the second pixel are fabricated to exhibit substantially the same electrical characteristics and/or comprise substantially the same full-well capacity.

9. The light sensor of claim 1 , wherein the measurement circuitry comprises an analogue to digital converter (ADC), wherein the ADC is configured to convert a voltage corresponding to the second charge into a digital signal.

10. The light sensor of claim 1 , comprising a state machine and/or a circuit configured to repeat the following steps for a predefined exposure time:
reset the first and second pixels; and
trigger the measurement circuitry to measure the second charge when the first charge reaches the threshold capacity.

11. The light sensor of claim 10 , wherein the state machine and/or the circuit is configured to do at least one of:
determine a total charge over the predefined exposure time by accumulating successive measurements of the second charge; and/or
compensate for an overhead time incurred during measurement of the second charge.

12. The light sensor of claim 1 , wherein the first pixel and/or the second pixel comprises a 4T active pixel.

13. The light sensor of claim 1 , comprising a plurality of second pixels.

14. The light sensor of claim 13 , wherein each second pixel is configured to accumulate an associated charge when the light sensor is exposed to light; and wherein the first pixel is configured to trigger the measurement circuitry to measure the associated charges when the first charge reaches the threshold capacity.

15. An active pixel sensor comprising a plurality of light sensors according to claim 1 .

16. The active pixel sensor of claim 15 , wherein:
a first light sensor of the plurality of light sensors is sensitive to light within a first range of wavelengths; and
a second light sensor of the plurality of light sensors is sensitive to light within a second range of wavelengths different to the first range of wavelengths.

17. The active pixel sensor of claim 15 , configured to operate as an RGB and/or wideband and/or flicker image sensor.

18. A image sensor comprising:
an array of pixels; and
at least one light sensor according to claim 1 .

19. A device comprising:
a processor; and at least one of:
at least one image sensor including an array of pixels;
at least one active pixel sensor further comprising a plurality of light sensors; and/or
at least one light sensor according to claim 1 .

20. The light sensor of claim 1 wherein the first pixel is configured to trigger the measurement circuitry to measure the second charge when the first charge reaches the threshold capacity of the first pixel and the second charge reaches a significant proportion of the threshold capacity,
wherein the threshold capacity corresponds to a full-well capacity of the first pixel, and the significant proportion of the threshold capacity is 70%-90% of the full-well capacity of the first pixel.

Assignees

• Ams Int Ag

Inventors

• Lenhard Herbert
• Waser Karl
• Greimel-Laengauer Bernhard
• Teufel Mario

Classifications

• H04N25/533 Primary

  by using differing integration times for different sensor regions · CPC title

• H04N25/75

  Circuitry for providing, modifying or processing image signals from the pixel array · CPC title

• G01J2001/446

  Photodiode · CPC title

• G01J1/44

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title

• H04N25/535

  by dynamic region selection · CPC title