Transversely-excited film bulk acoustic resonator with a cavity having round end zones

Patent metadata

Field	Value
Publication number	US-12184261-B2
Application number	US-202117330219-A
Country	US
Kind code	B2
Filing date	May 25, 2021
Priority date	Jun 15, 2018
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer is formed on the front surface of the piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. At least a portion of a perimeter of the cavity is curved and at least one end zone of the perimeter of the cavity is round.

First claim

It is claimed:

1. An acoustic resonator device comprising:
a substrate;
a piezoelectric layer attached to the substrate via one or more intermediate layers and including a diaphragm that is over a cavity that is under at least the diaphragm; and
an interdigital transducer (IDT) on a surface of the piezoelectric layer, the IDT including interleaved fingers on the diaphragm and extending from opposing busbars,
wherein the cavity includes a side that defines a perimeter of the cavity in a plan view of the surface of the piezoelectric layer,
wherein the perimeter of the cavity has four rounded corners, and
wherein at least one busbar of the opposing busbars overlaps at least a portion of at least one rounded corner of the four rounded corners of the perimeter in a thickness direction of the piezoelectric layer.

2. The acoustic resonator device of claim 1 , wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric layer, which is also transverse to a direction of an electric field created by the interleaved fingers.

3. The acoustic resonator device of claim 1 , wherein the perimeter of the cavity is disposed at an intersection of the cavity and a surface of the substrate.

4. The acoustic resonator device of claim 1 ,
wherein the cavity comprises a pair of end zones that each have a length that is equal to a length of a middle portion of the perimeter and that each have a width that is less than a width of the middle portion of the perimeter, and
wherein the pair of end zones are semicircular and the width of the end zones is between 0.1 and 0.3 times the width of the middle portion.

5. The acoustic resonator device of claim 1 , wherein the perimeter of the cavity is a rectangle having the four rounded corners.

6. The acoustic resonator device of claim 1 , wherein the substrate comprises a combination of materials.

7. A filter device, comprising:
a plurality of bulk acoustic resonators, with at least one of the bulk acoustic resonators including:
a substrate having a surface;
a piezoelectric layer attached to the substrate via one or more intermediate layers and including a diaphragm that is over a cavity that is under at least the diaphragm, with the cavity having a side that defines a perimeter of the cavity; and
a conductor pattern including an interdigital transducer (IDT) on a surface of the piezoelectric layer, the IDT having a plurality of interleaved fingers on the diaphragm and extending from opposing busbars,
wherein the cavity includes a side that defines a perimeter of the cavity in a plan view of the surface of the piezoelectric layer,
wherein the perimeter of the cavity has four rounded corners, and
wherein at least one busbar of the opposing busbars overlaps at least a portion of one rounded corner of the four rounded corners of the perimeter in a thickness direction of the piezoelectric layer.

8. The filter device of claim 7 , wherein, for each of the plurality of bulk acoustic resonators, the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the respective IDT excites a primary shear acoustic mode in the respective diaphragm, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric layer, which is also transverse to a direction of an electric field created by the interleaved fingers.

9. The filter device of claim 7 , wherein the substrate of the at least one bulk acoustic resonator comprises a combination of materials.

10. The filter device of claim 7 ,
wherein the cavity of the at least one bulk acoustic resonator comprises a pair of end zones that each have a length that is equal to a length of a middle portion of the perimeter and that each have a width that is less than a width of the middle portion of the perimeter, and
wherein the pair of end zones are semicircular and the width of the end zones is between 0.1 and 0.3 times the width of the middle portion.

11. The filter device of claim 7 , wherein the perimeter of the cavity of the at least one bulk acoustic resonator is a rectangle having the four rounded corners.

12. An acoustic resonator device comprising:
a substrate;
a piezoelectric layer including a diaphragm that is over a cavity between the diaphragm and the substrate; and
an interdigital transducer (IDT) on a surface of the piezoelectric layer, the IDT including interleaved fingers on the diaphragm and extending from opposing busbars,
wherein the cavity comprises a perimeter that faces the piezoelectric layer in a plan view thereof and has at least one rounded corer,
wherein at least one busbar of the opposing busbars overlaps the at least one rounded corner of the perimeter in a thickness direction of the piezoelectric layer.

13. The acoustic resonator device of claim 12 , wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric layer, which is also transverse to a direction of an electric field created by the interleaved fingers.

14. The acoustic resonator device of claim 12 , wherein the substrate comprises a combination of materials.

15. The acoustic resonator device of claim 12 , wherein the perimeter of the cavity comprises four rounded corners.

Assignees

• Murata Manufacturing Co

Inventors

• Zhang Kuan
• Costa James R
• Kay Andrew
• Dyer Greg
• Plesski Viktor
• Yandrapalli Soumya
• Hammond Robert B
• Garcia Bryant
• Turner Patrick
• John Jesson
• Yantchev Ventsislav

Classifications

• H03H9/176

  consisting of ceramic material (H03H9/177, H03H9/178 take precedence) · CPC title

• H03H2003/023

  the resonators or networks being of the membrane type · CPC title

• H03H9/568

  consisting of a ladder configuration · CPC title

• H03H9/564

  implemented with thin-film techniques · CPC title

• H03H9/562

  comprising a ceramic piezoelectric layer · CPC title