Semiconductor device

Patent metadata

Field	Value
Publication number	US-12183782-B2
Application number	US-202217582990-A
Country	US
Kind code	B2
Filing date	Jan 24, 2022
Priority date	Sep 15, 2021
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The semiconductor part includes first and third layers of a first conductivity type, and second, fourth and fifth layers of a second conductivity type. The first layer extends between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third semiconductor layer is provided between the second layer and the second electrode. The fourth layer is provided between the first layer and the first electrode. The semiconductor part includes an active region and a termination region. The active region includes the control electrode, the second layer, and the third layer. The termination region surrounds the active region. The fifth layer is provided in the first layer in the termination region.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type and a fifth semiconductor layer of the second conductivity type;
a first electrode provided on a back surface of the semiconductor part;
a second electrode provided on a front surface of the semiconductor part, the first semiconductor layer extending between the first electrode and the second electrode, the second semiconductor layer being provided between the first semiconductor layer and the second electrode, the third semiconductor layer being partially provided between the second semiconductor layer and the second electrode, the fourth semiconductor layer being provided between the first semiconductor layer and the first electrode; and
a control electrode provided inside a trench in the semiconductor part, the control electrode being provided between the semiconductor part and the second electrode, the control electrode being electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film, the control electrode extending in the first semiconductor layer from the front side of the semiconductor part, the second semiconductor layer facing the control electrode via the first insulating film,
the semiconductor part including an active region and a termination region, the active region including the control electrode, the second semiconductor layer, and the third semiconductor layer, the termination region surrounding the active region,
the fifth semiconductor layer being provided in the first semiconductor layer in the termination region and extending in a first direction directed along a boundary between the first semiconductor layer and the fourth semiconductor layer,
the fifth semiconductor layer being provided with first and second distances in a second direction directed from the first electrode toward the second electrode, the first distance from the fifth semiconductor layer to the front surface of the semiconductor part being greater than the second distance from the fifth semiconductor layer to the back surface of the semiconductor part.

2. The device according to claim 1 , wherein
the second distance is not more than 10 micrometers.

3. The device according to claim 1 , wherein
the fifth semiconductor layer includes a second-conductivity-type impurity with a concentration of not less than 5×10 15 cm −3 .

4. The device according to claim 1 , wherein
the semiconductor part further includes a sixth semiconductor layer of the second conductivity type, the sixth semiconductor layer being provided at the front side of the semiconductor part, the sixth semiconductor layer surrounding the active region, and
the fifth semiconductor layer is provided at the termination region side of the sixth semiconductor layer, the fifth semiconductor being apart from the sixth semiconductor layer.

5. The device according to claim 4 , wherein
the sixth semiconductor layer is provided between the second semiconductor layer and the fifth semiconductor layer.

6. The device according to claim 1 , wherein
the semiconductor part further includes a seventh semiconductor layer of the first conductivity type,
the seventh semiconductor layer is provided between the first semiconductor layer and the fourth semiconductor layer, and
the seventh semiconductor layer includes a first-conductivity-type impurity with a higher concentration than a concentration of a first-conductivity-type impurity in the first semiconductor layer.

7. The device according to claim 6 , wherein
the seventh semiconductor layer extends from the active region to the termination region between the fourth semiconductor layer and the fifth semiconductor layer.

8. The device according to claim 7 , wherein
the fifth semiconductor layer is apart from the seventh semiconductor layer with a portion of the first semiconductor layer interposed.

9. The device according to claim 1 , wherein
the semiconductor part further includes an eighth semiconductor layer of the first conductivity type, the eighth semiconductor layer being provided at the front side of the semiconductor part and being apart from the sixth semiconductor layer, the sixth semiconductor layer being provided between the active region and the eighth semiconductor layer, the eighth semiconductor layer including a first-conductivity-type impurity with a higher concentration than a concentration of a first-conductivity-type impurity in the first semiconductor layer, and
the first semiconductor layer includes a portion provided between the sixth semiconductor layer and the eighth semiconductor layer, the fifth semiconductor layer being provided between the portion of the first semiconductor layer and the fourth semiconductor layer.

10. The device according to claim 9 , wherein
the fifth semiconductor layer has a plate-like shape extending in the first direction.

11. The device according to claim 9 , wherein
the semiconductor part further includes a ninth semiconductor layer of the second conductivity type,
the ninth semiconductor layer is provided between the sixth and eighth semiconductor layers at the front side of the semiconductor part, and
the fifth semiconductor layer is provided between the fourth semiconductor layer and the ninth semiconductor layer in the second direction.

12. The device according to claim 11 , wherein
the ninth semiconductor layer surrounds the active region.

13. The device according to claim 11 , further comprising:
a third electrode provided on the eighth semiconductor layer; and
a fourth electrode provided on the ninth semiconductor layer,
the second electrode, the third electrode, and the fourth electrode being apart from each other,
the third electrode being electrically connected to the eighth semiconductor layer,
the fourth electrode being electrically connected to the ninth semiconductor layer.

14. The device according to claim 1 , wherein
the first semiconductor layer includes a first region and a second region, the second region being provided between the first electrode and the first region and including a first-conductivity-type impurity with a higher concentration than a concentration of a first-conductivity-type impurity in the first region, and
the fifth semiconductor layer is provided in the second region.

15. The device according to claim 14 , wherein
the fourth semiconductor layer extends from the active region to the termination region between the first electrode and the second region of the first semiconductor layer.

16. The device according to claim 15 , wherein
the first-conductivity-type impurity in the first semiconductor layer has a distribution in the second direction, the distribution including a plurality of concentration peaks in the second region, and
the plurality of concentration peaks includes first and second peaks, the first peak being positioned between the fourth semiconductor layer and the fifth semiconductor layer, the second peak being positioned between the first region and the fifth semiconductor layer, a first concentration of the first-conductivity-type impurity at the first peak being greater than a second-conductivity-type impurity concentration of the fifth semiconductor layer, the second concentration of the first-conductivity-type impurity at the second peak b

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Motai Takako
• Matsudai Tomoko
• Iwakaji Yoko
• Itokazu Hiroko
• Fuse Kaori
• Kawamura Keiko
• Oasa Kohei

Classifications

• H10D12/481 Primary

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D62/108 Primary

  having localised breakdown regions, e.g. built-in avalanching regions  (in self-protected thyristors H10D18/211) · CPC title

• H10D64/112

  comprising multiple field plate segments · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title