Etching gas compositions, methods of forming micropatterns, and methods of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12183591-B2
Application number	US-202217701846-A
Country	US
Kind code	B2
Filing date	Mar 23, 2022
Priority date	Mar 24, 2021
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.

First claim

What is claimed is:

1. An etching gas composition comprising:
a first organofluorine compound having a formula of C a F b H c , wherein a is an integer of 3 to 6, b is an integer of 1 to 10, and c is an integer of 1 to 6;
an organosulfur compound having 1 to 4 sulfur atoms, the organosulfur compound comprising a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond and at least one carbon-carbon double (—C═C—) bond, and
a second organofluorine compound and a third organofluorine compound, wherein the second and third organofluorine compound are each different from the first organofluorine compound,
wherein the organosulfur compound is present in the etching gas composition in an amount of about 1 part to about 100 parts by mole based on 100 parts by mole of the first organofluorine compound,
wherein the second organofluorine compound comprises a C1 to C6 perfluorocarbon compound, and the third organofluorine compound include at least one selected from the group of C 3 H 4 F 4 , C 3 H 3 F 5 , C 3 H 2 F 6 , C 3 H 1 F 7 , C 3 H 3 F 3 , C 3 H 2 F 4 , C 3 H 1 F 5 , C 4 H 4 F 6 , C 4 H 3 F 7 , C 4 H 2 F 8 , C 4 H 1 F 9 , C 4 H 4 F 4 , C 4 H 3 F 5 , C 4 H 2 F 6 , C 4 H 1 F 7 , C 4 H 2 F 4 , and C 4 H 1 F 5 .

2. The etching gas composition of claim 1 , wherein the organosulfur compound has a formula of C x F y S z , wherein x is an integer of 1 to 6, y is an integer of 1 to 16, and z is an integer of 1 to 4.

3. The etching gas composition of claim 1 , wherein
the organosulfur compound comprises at least one selected from the group consisting of methanethioyl fluoride, difluoromethanethione, trifluormethanthiyl-radical, trifluoro(trifluoromethyl)sulfur(IV), pentafluoro(trifluoromethyl)-λ 6 -sulfane, trifluoromethylmercaptothiocarbonyl fluoride, 2,2,4,4-tetrafluoro-1,3-dithietane, trifluoro(trifluoromethylsulfanyl)methane, trifluoro-(trifluoromethyldisulfanyl)methane, trifluoro-(trifluoromethyltrisulfanyl)methane, trifluoro-(trifluoromethyltetrasulfanyl) methane, difluorobis(trifluoromethyl)sulfur(IV), 1,1,2-trifluoro-2-pentafluorosulfanylethene, bis(trifluoromethyl)tetrafluorosulfur(VI), pentafluoro(1,1,2,2,2-pentafluoroethyl)-λ 6 -sulfane, hexafluorothioacetone, bis(trifluoromethylsulfanyl) methanethione, 3,3,3-trifluoro-1-pentafluorosulfanyl-1-propyne, hexadecafluoro-octahydro-1,4-dithiane, 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene-1-thione, 3,4-bis(trifluoromethyl)dithiete, bis(trifluoromethylmercapto)acetylene, perfluorotetrahydrothiophene, 2,2-difluoro-3,3-bis(trifluoromethyl)thiirane, and perfluorocyclohexanesulfurpentafluoride.

4. The etching gas composition of claim 1 , wherein the first organofluorine compound comprises at least one selected from the group consisting of 1h-heptafluoropropane, 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluoropropane, 1,1,1,3,3,3-hexafluoropropane, 1,1,2,2,3,3-hexafluoropropane, 1,1,2,2,3-pentafluoropropane, 1, 1,1,2,2-pentafluoropropane, 1,1,2,3,3-pentafluoropropane, 1,1,1,2,3-pentafluoropropane, 1,1,1,3,3-pentafluoropropane, 1,1,2,2-tetrafluoropropane, 1,1,1,2-tetrafluoropropane, 1,2,2,3-tetrafluoropropane, 1,1,1,3-tetrafluoropropane, 1,1,3,3-tetrafluoropropane, 1,1,2,3-tetrafluoropropane, 1,1,3-trifluoropropane, 1,1,2-trifluoropropane, 1,2,3-trifluoropropane, 1,1,2-trifluoropropane, 1,1,1-trifluoropropane, 1,1-difluoropropane, 1,2-difluoropropane, 2,2-difluoropropane, 1-fluoropropane, 2-fluoropropane, 1,1,3,3,3-pentafluoroprop-1-ene, 1,1,2,3,3-pentafluoroprop-1-ene, 1,2,3,3,3-pentafluoroprop-1-ene, 1,3,3,3-tetrafluoroprop-1-ene, 1,1,3,3-tetrafluoroprop-1-ene, 2,3,3,3-tetrafluoroprop-1-ene, 1,2,3,3-tetrafluoroprop-1-ene, 1,1,2,3-tetrafluoroprop-1-ene, 3,3,3-trifluoroprop-1-ene, 1,1,3-trifluoroprop-1-ene, 1,3,3-trifluoroprop-1-ene, 1,1,2-trifluoroprop-1-ene, 1,2,3-trifluoroprop-1-ene, 2,3,3-trifluoroprop-1-ene, 1,1-difluoroprop-1-ene, 1,3-difluoroprop-1-ene, 3,3-difluoroprop-1-ene, 1,2-difluoroprop-1-ene, 2,3-difluoroprop-1-ene, 1-fluoroprop-1-ene, 2-fluoroprop-1-ene, 3-fluoroprop-1-ene, 1,1,1,2,2,3,3,4,4-nonafluorobutane, 1,1,1,2,2,3,4,4,4-nonafluorobutane, 1,1,1,2,2,3,3,4-octafluorobutane, 1,1,1,2,2,4,4,4-octafluorobutane, 1,1,2,2,3,3,4,4-octafluorobutane, 1,1,1,2,2,3,4,4-octafluorobutane, 1,1,1,2,3,4,4,4-octafluorobutane, 1,1,1,2,3,3,4,4-octafluorobutane, 1,1,1,2,2,3,3-heptafluorobutane, 1,1,1,2,2,4,4-heptafluorobutane, 1,1,1,3,3,4,4-heptafluorobutane, 1,1,2,2,3,3,4-heptafluorobutane, 1,1,1,2,4,4,4-heptafluorobutane, 1,1,1,2,2,3,4-heptafluorobutane, 1,1,1,2,3,4,4-heptafluorobutane, 1,1,2,2,3,4,4-heptafluorobutane, 1, 1,1,2,2,3-hexafluorobutane, 1,1,1,2,3,3-hexafluorobutane, 1,1,2,2,3,3-hexafluorobutane, 1,1,1,2,2,4-hexafluorobutane, 1,1,1,3,3,4-hexafluorobutane, 1,2,2,3,3,4-hexafluorobutane, 1,1,1,4,4,4-hexafluorobutane, 1,1,1,2,3,4-hexafluorobutane, 1,1,2,2,3,4-hexafluorobutane, 1,1,2,3,3,4-hexafluorobutane, 1,1,1,3,4,4-hexafluorobutane, 1,1,1,2,4,4-hexafluorobutane, 1,1,2,2,4,4-hexafluorobutane, 1,1,2,3,4,4-hexafluorobutane, 1,1,1,2,2-pentafluorobutane, 1,1,1,3,3-pentafluorobutane, 1,1,1,4,4-pentafluorobutane, 1,1,1,2,3-pentafluorobutane, 1, 1,1,2,4-pentafluorobutane, 1,1,1,3,4-pentafluorobutane, 1,1,2,2,3-pentafluorobutane, 1,1,2,2,4-pentafluorobutane, 1,1,3,3,4-pentafluorobutane, 1,1,2,3,3-pentafluorobutane, 1,1,2,4,4-pentafluorobutane, 1,2,2,3,3-pentafluorobutane, 1,1,2,3,4-pentafluorobutane, 1,2,2,3,4-pentafluorobutane, 1,1,2,2,3,3,4-heptafluorocyclopentane, 1,1,2,2,3,3-hexafluorocyclopentane, 1h,2h-octafluorocyclopentane, 3,3,4,4,5,5-hexafluorocyclopentene, 1,3,3,4,4,5,5-heptafluorocyclopentene, 2h,3h-decafluoropentane, and 3,3,4,4,5,5,6,6,6-nonafluorohex-1-ene.

5. The etching gas composition of claim 1 , wherein
the organosulfur compound comprises a compound having a formula of C 4 F 6 S.

6. The etching gas composition of claim 1 , wherein
the first organofluorine compound comprises hexafluorobutene.

7. The etching gas composition of claim 1 , wherein
the first organofluorine compound comprises at least one selected from the group consisting of 1,1,3,3,3-pentafluoro-2-(fluoromethyl)prop-1-ene, (3S,4R)-1,1,2,2,3,4-hexafluorocyclobutane, 2,3,3,4,4,4-hexafluoro-1-butene, 1,1,2,2,3,3-hexafluorocyclobutane, (2Z)-1,1,1,2,4,4-hexafluoro-2-butene, and (2E)-1,1,2,3,4,4-hexafluoro-2-butene.

8. The etching gas composition of claim 1 , wherein
the organosulfur compound is present in the etching gas composition in an amount of about 10 parts to about 60 parts by mole based on 100 parts by mole of the first organofluorine compound.

9. The etching gas composition of claim 1 , wherein
the second organofluorine compound and/or the third organofluorine compound is present in the etching gas composition in an amount of about 1 part to about 60 parts by mole based on 100 parts by mole of the first organofluorine compound.

10. The etching gas composition of claim 9 , wherein
a ratio of a molar number of the second organofluorine compound to a molar number of the third organofluorine compound is in a range of about 10 to about 32.

11. A method of forming patterns, the method comprising:
forming a film on a substrate;
forming an etch mask on the film; and
etching the film by performing an etch process on the etch mask using the etching gas composition of claim 1 .

12. An etching gas composition comprising:
a first organofluorine compound having a formula of C a F b H c ; and
an organosulfur compound having a formula of C x F y S z , the organosulfur compound comprising at least one carbon-carbon double (—C═C—) bond,
wherein the organosulfur compound is present in the etching gas composition in an amount of about 10 parts to about 60 parts by mole based on 100 parts by mole of the first organofluorine compound,
wherein a is an integ

Assignees

• Samsung Electronics Co Ltd
• Wonik Mat

Inventors

• Kim Dohoon
• Chung Wonwoong
• Kim Taehyung
• Park Heejun
• Song Handuck
• Jeong Heonjong
• Kim Younglae
• Cho Byeongok

Classifications

• H10P50/283 Primary

  by chemical means · CPC title

• H10P50/69 Primary

  using masks for semiconductor materials · CPC title

• H10P50/268

  of silicon-containing layers · CPC title

• C09K13/00

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• H10B43/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title