Magnetic field sensor and method for measuring a magnetic field

US12181546B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12181546-B2
Application numberUS-202318166848-A
CountryUS
Kind codeB2
Filing dateFeb 9, 2023
Priority dateFeb 18, 2022
Publication dateDec 31, 2024
Grant dateDec 31, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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A method for measuring a magnetic field includes radiating a microwave field having a first frequency into at least one measuring location in a crystal, which comprises optically excitable color center defects at the measuring location, radiating excitation light and detecting resulting fluorescence light, applying a deformation force which results in local mechanical strain, wherein an applied first deformation force is selected such that the first frequency corresponds to a resonance frequency of the color center defects under the action of the first deformation force without the magnetic field to be measured and the detected fluorescence light becomes minimal. The method further includes placing the sensor into the magnetic field to be measured to bring about a shift in the resonance frequency and varying the applied deformation force to compensate the shift in the resonance frequency until a minimum fluorescence signal is again acquired at a second deformation force.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for measuring a magnetic field using a sensor, the method, comprising: radiating a microwave field having a first frequency into at least one measuring location in a crystal, which comprises optically excitable color center defects at least at the at least one measuring location; radiating excitation light into the at least one measuring location and detecting resulting fluorescence light from the at least one measuring location; applying a deformation force to the crystal which results in local mechanical strain at least in an area of the at least one measuring location, the applying of the deformation force including applying a first deformation force that is selected such that the first frequency corresponds to a resonance frequency of the color center defects under the application of the first deformation force without the magnetic field to be measured and the detected fluorescence light becomes minimal; placing the sensor into the magnetic field to be measured in order to bring about a shift in the resonance frequency; and varying the deformation force applied to the crystal to compensate for the shift in the resonance frequency until a minimum fluorescence signal is again acquired at a second deformation force. 2. The method according to claim 1 , further comprising: determining the field strength of the magnetic field to be measured on the basis of a difference between the first and the second deformation forces. 3. The method according to claim 1 , further comprising: radiating microwave fields having two or more frequencies, wherein each of the two or more frequencies corresponds to a resonance frequency of the color center defects for an alignment axis of the color center defects in the crystal under the action of the first deformation force without the magnetic field to be measured; varying the deformation force after introduction into the magnetic field until a minimum fluorescence signal is again acquired for each of the radiated frequencies at a third deformation force; and determining the field strength of the magnetic field to be measured in the direction of the alignment axis assigned to the radiated frequency on the basis of a difference between the first and the third deformation forces. 4. A magnetic field sensor for measuring a magnetic field, comprising: a crystal, which comprises optically excitable color center defects at least at one or more measuring locations; a fluorescence module configured to optically excite the color center defects at the one or more measuring locations and acquiring a resulting fluorescence light signal from the one or more measuring locations; an actuator configured to produce mechanical strains at least at the one or more measuring locations in the crystal by applying a defined variable deformation force; a microwave generator configured to produce a microwave field with a predetermined frequency at the one or more measuring locations; and a measurement module configured to control the actuator depending on the acquired fluorescence signal and to detect the deformation force applied by the actuator at least at a fluorescence minimum. 5. The magnetic field sensor according to claim 4 , wherein the measurement module is further configured to: control the actuator to apply a first deformation force, which is selected such that the first frequency corresponds to a resonance frequency of the color center defects under the action of the first deformation force without the magnetic field to be measured and the detected fluorescence light is minimal; and control the actuator to vary the applied deformation force if the detected fluorescence light is no longer minimal due to the action of an external magnetic field until a minimum fluorescence signal is again acquired at a second deformation force. 6. The magnetic field sensor according to claim 5 , wherein the measurement module is further configured to determine the field strength of the magnetic field to be measured on the basis of a difference between the first and the second deformation forces. 7. The magnetic field sensor according to claim 4 , wherein the crystal is partly or entirely configured as a crystal membrane. 8. The magnetic field sensor according to claim 7 , wherein the crystal membrane defines recesses that alter the deformation and/or strain properties of the crystal membrane. 9. The magnetic field sensor according to claim 4 , wherein the crystal is partly or entirely configured as a crystal bending beam, which is rigidly attached on one or on both sides. 10. The magnetic field sensor according to claim 4 , wherein the fluorescence module comprises: at least one excitation light source configured to radiate excitation light into the one or more measuring locations; and at least one photodetector configured to detect fluorescence light at one or more of the measuring locations, wherein the crystal is configured as an optical waveguide that guides excitation light to the one or more measuring locations and/or guides fluorescence light away from the one or more measuring locations to the at least one photodetector. 11. The magnetic field sensor according to claim 4 , wherein the actuator comprises a piezoelectric actuator or an electrostatic actuator. 12. The magnetic field sensor according to claim 4 , further comprising: a carrier substrate on which the crystal is mounted such that a recess is formed between the carrier substrate and the one or more measuring locations, wherein the actuator is disposed on the crystal such that deflection of the crystal by the actuator is possible at least in portions of the crystal. 13. The magnetic field sensor according to claim 12 , wherein at least part of the fluorescence module is accommodated in the recess. 14. A computing unit comprising at least one memory having stored program instructions executed by the computing unit to carry out the method according to claim 1 . 15. A computer program comprising program instructions executed by a computing unit to carry out the method according to claim 1 . 16. A non-transitory machine-readable storage medium on which the computer program according to claim 15 is stored.

Assignees

Inventors

Classifications

  • G01R33/26Primary

    using optical pumping · CPC title

  • Atomic fluorescence · CPC title

  • by using electron paramagnetic resonance (G01N24/12 takes precedence) · CPC title

  • Detection of MR without the use of RF or microwaves, e.g. force-detected MR, thermally detected MR, MR detection via electrical conductivity, optically detected MR · CPC title

  • involving signal transmission without using electrically conductive connections, e.g. wireless communication or optical communication of the MR signal or an auxiliary signal other than the MR signal · CPC title

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What does patent US12181546B2 cover?
A method for measuring a magnetic field includes radiating a microwave field having a first frequency into at least one measuring location in a crystal, which comprises optically excitable color center defects at the measuring location, radiating excitation light and detecting resulting fluorescence light, applying a deformation force which results in local mechanical strain, wherein an applied…
Who is the assignee on this patent?
Bosch Gmbh Robert
What technology area does this patent fall under?
Primary CPC classification G01R33/26. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 31 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).