Atomic vapor cell, an integrated atomic/photonic device and apparatus comprising the atomic vapor cell, and a method for fabricating an atomic vapor cell

Patent metadata

Field	Value
Publication number	US-12181541-B2
Application number	US-202318110638-A
Country	US
Kind code	B2
Filing date	Feb 16, 2023
Priority date	Feb 16, 2022
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

Provided is an atomic vapor cell, for atomic or molecular spectroscopy, optical pumping, and/or spin-based atomic sensing, that includes a host substrate and defined there within a buried or non-buried chamber laser written in the host substrate without the need of a mask or photoresist, with either planar or three-dimensional geometry, and intended to contain an atomic vapor.
Also provided are an integrated atomic/photonic device and an apparatus, in both cases including the presently disclosed atomic vapor cell, and a method for fabricating the presently disclosed atomic vapor cell.

First claim

What is claimed is:

1. An atomic vapor cell, for at least one of atomic or molecular spectroscopy, optical pumping, and spin-based atomic sensing, comprising a host substrate and defined there within a chamber for containing an atomic vapor, wherein said chamber is a buried or non-buried chamber laser written in said host substrate without the need of a mask or photoresist, with either planar or three-dimensional geometry.

2. The atomic vapor cell of claim 1 , wherein the host substrate and chamber are configured and arranged to enable multiple optical access to an atomic interaction area of the chamber along at least two optical axes.

3. The atomic vapor cell of claim 1 , further comprising, also laser written in the host substrate, a buried or non-buried reservoir and connecting channels fluidically communicating the chamber with said reservoir, wherein the reservoir is a is a planar or three-dimensional reservoir.

4. The atomic vapor cell of claim 3 , wherein the reservoir has at least one open end defined at a face of the host substrate and the vapor cell further comprises a sealing substrate bonded to said face of the host substrate to seal said at least one open end, wherein said at least one open end was made to remove excess material from the laser writing process therethrough and to fill the reservoir with said atomic vapor or with a source of material originating said atomic vapor.

5. The atomic vapor cell of claim 1 , wherein at least the host substrate is transparent to a determined wavelength of a light beam used for a single or multiple optical access to the chamber for performing at least one of said atomic or molecular spectroscopy, optical pumping, and spin-based atomic sensing.

6. The atomic vapor cell of claim 5 , wherein the chamber has at least a pair of respective opposite ends adjacent to respective opposite side facets of the host substrate, so that optical access along one dimension of the chamber is enabled for a light beam entering the chamber through one of said opposite ends and exits the same through the other of said opposite ends.

7. The atomic vapor cell of claim 5 , wherein the chamber has at least two pairs of respective opposite ends adjacent to respective opposite side facets of pairs of opposite side facets of the host substrate, so that multiple optical access along two respective transversal dimensions of the chamber is enabled for two respective light beams, each entering the chamber through one of the opposite ends of a respective pair and exits the same through the other of said opposite ends.

8. The atomic vapor cell of claim 1 , wherein the reservoir and the chamber at least one of:
further contain a buffer gas, and
are internally treated with the addition of a diffusion barrier to prevent atomic depolarizing collisions.

9. An integrated atomic/photonic device, comprising the atomic vapor cell of claim 1 and at least one further photonic component defined or arranged on said host substrate or on a further host substrate.

10. The integrated atomic/photonic device of claim 9 , wherein said at least one further photonic component is integrated on said host substrate or on said further host substrate.

11. The integrated atomic/photonic device of claim 9 , wherein said at least one further photonic component is either a planar or non-planar waveguide-based photonic component laser written in said host substrate or in said further host substrate, or placed in a slot laser written in said host substrate or in said further host substrate.

12. The integrated atomic/photonic device of claim 10 , wherein said at least one further photonic component is either a planar or non-planar waveguide-based photonic component laser written in said host substrate or in said further host substrate, or placed in a slot laser written in said host substrate or in said further host substrate.

13. An apparatus, comprising at least one of the atomic vapor cell of claim 1 and the integrated atomic/photonic device of claim 10 .

14. The apparatus of claim 13 , wherein the apparatus is at least one of the following apparatuses: a system for saturated absorption spectroscopy, an atomic spectroscopy/frequency reference, an atomic clock, an optically-pumped-magnetometer, a magnetic microscope, a spin-based atomic sensor, and an atomic gyroscope.

15. The apparatus of claim 13 , further comprising optical fibres joint/glued to the vapor cell or to the atomic/photonic device so that laser light of one or multiple laser beams can input through at least one of said optical fibres, propagate through the chamber, and then output therefrom, after atomic interaction, though at least one other of said optical fibres.

16. A method for fabricating an atomic vapor cell, for at least one of atomic or molecular spectroscopy, optical pumping, and spin-based atomic sensing, comprising providing a host substrate and defining there within a chamber for containing an atomic vapor, wherein the method comprises laser writing the chamber in said host substrate without the need of a mask or photoresist, in the form of a buried a buried or non-buried chamber with either planar or three-dimensional chamber.

17. The method of claim 16 , further comprising:
laser writing in the host substrate at least one of:
a reservoir and connecting channels fluidically communicating the chamber with said reservoir, wherein the reservoir is in the form of a non-planar three-dimensional reservoir and has at least one open end defined at a face of the host substrate, and
on a top or bottom surface of the host substrate, at least one of:
one or more buried chambers,
one or more non-buried chambers,
reservoirs, and
connecting channels;

at least one of:
removing excess material from the laser writing process of at least said buried chamber through said at least one open end of the reservoir, and
polishing the at least one of one or more non-buried chambers, reservoirs, and connecting channels through an open end thereof;

at least one of:
adding a deposition of a diffusion barrier to the inner walls of the chambers, and
filling the chambers with a buffer gas, to prevent atomic depolarizing collisions;

filling the reservoir with said atomic vapor or with a source of material originating said atomic vapor;
at least one of:
bonding a sealing substrate to said face of the host substrate to seal said at least one open end of the reservoir, and
bonding a sealing substrate on the top or bottom of the host substrate if at least one of one or more non-buried chambers, reservoirs, and connecting channels have been laser written on the top or bottom surface of the host substrate; and

diffusing the atomic vapor to reach the chamber.

Assignees

• Fundacio Inst De Ciencies Fotoniques
• Inst Catalana Recerca Estudis Avancats
• Milano Politecnico
• Consiglio Nazionale Ricerche
• Fundacio Inst De Ciencies Fotòniques

Inventors

• Mitchell Morgan
• Lucivero Vito Giovanni
• Osellame Roberto
• Corrielli Giacomo
• Zanoni Andrea

Classifications

• G01R33/46

  NMR spectroscopy · CPC title

• G04F5/145

  using Coherent Population Trapping · CPC title

• G01R33/032

  using magneto-optic devices, e.g. Faraday {or Cotton-Mouton effect} · CPC title

• G04F5/14

  using atomic clocks · CPC title

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title