Methods of forming low resistivity titanium nitride thin film in horizontal vias and related devices

Patent metadata

Field	Value
Publication number	US-12180583-B2
Application number	US-202218062274-A
Country	US
Kind code	B2
Filing date	Dec 6, 2022
Priority date	Dec 6, 2021
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.

First claim

What is claimed:

1. A method of forming a conformal layer including titanium nitride (TiN) in a horizontal via on a substrate in a reaction chamber comprising:
introducing a precursor into the reaction chamber according to a first exposure schedule, wherein the precursor includes non-halogenated metal-organic titanium, wherein the first exposure schedule indicates a plurality of precursor exposure periods, wherein each precursor exposure period of the plurality of precursor exposure periods is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor into the reaction chamber during the particular duration of time;
introducing a co-reactant into the reaction chamber according to a second exposure schedule, wherein the co-reactant includes nitrogen, wherein the second exposure schedule indicates a plurality of co-reactant exposure periods, wherein each co-reactant exposure period of the plurality of co-reactant exposure periods is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant into the reaction chamber during the particular duration of time; and
providing the conformal layer including TiN in the horizontal via based on said introducing a precursor into the reaction chamber said introducing the co-reactant into the reaction chamber.

2. The method of claim 1 , wherein the first exposure schedule indicates that the particular duration of time is between about 100 ms and about 250 ms.

3. The method of claim 1 , wherein the second exposure schedule indicates that the particular duration of time is between about 3600 ms and about 8000 ms.

4. The method of claim 1 , wherein the second exposure schedule indicates that the particular duration of time is about 6000 ms.

5. The method of claim 1 , wherein each of the precursor exposure periods has a lower duty cycle than each of the co-reactant exposure periods.

6. The method of claim 1 , wherein the duty cycle of a first precursor exposure period of the plurality of precursor exposure periods is about 50%.

7. The method of claim 1 , wherein the duty cycle of a first co-reactant exposure period of the plurality of co-reactant exposure periods is about 75%.

8. The method of claim 1 , wherein at least one precursor exposure period at least partially overlaps with at least one co-reactant exposure period.

9. The method of claim 1 , wherein a thickness of the conformal layer is about 15 nm.

10. The method of claim 1 , wherein the wherein a temperature of the reaction chamber is between about 350° C. and about 525° C.

11. The method of claim 1 , wherein the wherein a temperature of the reaction chamber is between about 400° C. and about 450° C.

12. The method of claim 1 , wherein a resistivity of the conformal layer is between about 100 uΩ-cm and about 500 uΩ-cm.

13. The method of claim 1 , wherein a resistivity of the conformal layer is less than or equal to about 400 uΩ-cm.

14. The method of claim 1 , wherein the co-reactant comprises anhydrous hydrazine (N 2 H 4 ).

15. The method of claim 1 , wherein via is a horizontal via having an aspect ratio of about 5:1.

16. The method of claim 1 , wherein the horizontal via has dimensions of about 20 nm by about 100 nm.

17. A method of forming a conformal layer comprising titanium nitride (TiN) on a substrate with a horizontal via within a reaction chamber, the method comprising:
introducing a precursor comprising titanium into the reaction chamber according to a precursor exposure schedule, wherein the precursor exposure schedule specifies a first duration and a first duty cycle for introduction of the precursor into the reaction chamber; and
introducing a co-reactant comprising nitrogen into the reaction chamber according to a co-reactant exposure schedule, wherein the co-reactant exposure schedule specifies a second duration and a second duty cycle for introduction of the co-reactant into the reaction chamber, wherein the second duty cycle is greater than the first duty cycle,
wherein the conformal layer is formed in the horizontal via.

18. The method of claim 17 , wherein the reaction chamber is maintained at a temperature between about 350° C. and about 525° C. during formation of the conformal layer, and the conformal layer has a resistivity of less than or equal to about 400 uΩ-cm.

19. The method of claim 17 , wherein the precursor comprises a non-halogenated metal-organic titanium compound, and the co-reactant comprises anhydrous hydrazine (N 2 H 4 ).

20. The method of claim 17 , wherein the horizontal via runs generally parallel to a major surface of the substrate, and wherein the horizontal via has an aspect ratio of about 5:1.

Assignees

• Univ California
• Merck Patent Gmbh

Inventors

• Kummel Andrew
• Kuo Cheng-Hsuan
• Yun Seonguk
• Kanjolia Ravindra
• Moinpour Mansour
• Moser Daniel

Classifications

• H10W20/033

  in openings in dielectrics · CPC title

• H10P14/432

  using selective deposition · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C28/04

  only coatings of inorganic non-metallic material · CPC title