Quantum dot, method of manufacturing quantum dot, and electronic element

Patent metadata

Field	Value
Publication number	US-12180403-B2
Application number	US-202217572928-A
Country	US
Kind code	B2
Filing date	Jan 11, 2022
Priority date	Jan 12, 2021
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

Provided are a quantum dot, a method of manufacturing the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including a first semiconductor nanocrystal and a doping metal. The first semiconductor nanocrystal includes a group II element, a group III element, and a group V element. The quantum dot has a narrower full width at half maximum (FWHM) and superior quantum efficiency, and manufactured in a simple manner.

First claim

What is claimed is:

1. A quantum dot comprising:
a core comprising a first semiconductor nanocrystal and a doping metal, the doping metal being positioned inside of the core; and
a shell on the core comprising a second semiconductor nanocrystal,
wherein the first semiconductor nanocrystal comprises a group II element, a group III element, and a group V element,
the second semiconductor nanocrystal comprises a group II element and a group VI element,
the doping metal is a material different from the group II element, the group III element, and the group V element of the first semiconductor nanocrystal and is selected from Sr, Ba, and Ca, and
a ratio between the number of moles of the group III element of the first semiconductor nanocrystal and the number of moles of the doping metal ranges from 1:0.001 to 1:0.2.

2. The quantum dot of claim 1 , wherein the ratio between the number of moles of the group III element of the first semiconductor nanocrystal and the number of moles of the doping metal ranges from 1:0.01 to 1:0.2.

3. The quantum dot of claim 1 , wherein a ratio between the number of moles of the group III element in the first semiconductor nanocrystal and the number of moles of the group II element in the first semiconductor nanocrystal ranges from 1:5 to 1:10.

4. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal comprises In, Zn, and P.

5. The quantum dot of claim 1 , wherein the doping metal comprises one or more selected from Sr and Ba.

6. The quantum dot of claim 1 , wherein a ratio between the number of moles of the group III element in the quantum dot and the number of moles of the group II element in the quantum dot ranges from 1:16 to 1:25.

7. A method of manufacturing a quantum dot, the method comprising:
a step of forming a core comprising a first semiconductor nanocrystal and a doping metal, and
a step of forming a shell on the core,
wherein the first semiconductor nanocrystal comprises a group II element, a group III element, and a group V element,
the second semiconductor nanocrystal comprises a group II element and a group VI element,
the doping metal is a material different from the group II element, the group III element, and the group V element of the first semiconductor nanocrystal and is selected from Sr, Ba, Be, and Ca, and
a ratio between the number of moles of the group III element of the first semiconductor nanocrystal and the number of moles of the doping metal ranges from 1:0.001 to 1:0.2.

8. The method of claim 7 , wherein the step of forming a core comprises:
a step (1-1) of raising a temperature to a temperature range of from 100° C. to 200° C. while decompressing a mixture solution in which a doping metal precursor and a group II element precursor solution are added to a group III element precursor solution; and
a step (1-2) raising the temperature of the mixture solution, the temperature of which has been raised in the step (1-1), to a temperature range of from 200° C. to 400° C. in an inert atmosphere and adding a group V element precursor solution to the temperature-raised mixture solution.

9. The method of claim 8 , wherein the group II element precursor solution comprises a metal OXO cluster.

10. The method of claim 7 , further comprising a step of forming a plurality of the shells surrounding the core.

11. An electronic device comprising the quantum dot of claim 1 .

Assignees

• Duk San Neolux Co Ltd

Inventors

• Kim Do Eon
• Shin Jong Moon
• Lee Chang Min
• Lee Hyung Dong

Classifications

• H10K50/115

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• C09K11/0883 Primary

  Arsenides; Nitrides; Phosphides · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C09K11/703

  with zinc or cadmium · CPC title