Fluorescent body, method for manufacturing same, and light-emitting device using same

Patent metadata

Field	Value
Publication number	US-12180402-B2
Application number	US-202017618852-A
Country	US
Kind code	B2
Filing date	Mar 31, 2020
Priority date	Jun 27, 2019
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

Provided are a new phosphor having emission characteristics different from the conventional nitride or oxynitride phosphor, a manufacturing method, and a light-emitting device. In an embodiment, the phosphor may include inorganic substance having crystal represented by A 26 (D, E) 51 X 86 including at least A, D, X (A is at least one kind of element selected from Mg, Ca, Sr, and Ba; and D is Si, and X is at least one kind of element selected from O, N, and F); and further includes, if necessary, E (E is at least one kind of element selected from B, Al, Ga, and In) wherein the crystal further includes M (M is at least one kind of element selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb). Upon irradiation of excitation source, the maximum value of emission peak in a wavelength range from 630 nm to 850 nm may occur.

First claim

What is claimed is:

1. A phosphor comprising inorganic substance including a crystal represented by A 26 D 51 X 86 that includes at least an A element, a D element, and an X element;
wherein A is at least one kind of element selected from a group consisting of Mg, Ca, Sr, and Ba; and D is Si element, and X is at least one kind of element selected from a group consisting of O, N, and F; and
optionally the D element is partially substituted by an E element wherein E is at least one kind of element selected from a group consisting of B, Al, Ga, and In; and
wherein the crystal further includes an M element as being solid solved therein wherein M is at least one kind of element selected from a group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb.

2. The phosphor according to claim 1 wherein the crystal represented by A 26 D 51 X 86 is A 26 D 51 O 2 N 84 and the D element is not substituted by the E element.

3. The phosphor according to claim 1 wherein the crystal represented by A 26 D 51 X 86 has a crystal structure in the cubic crystal system and the lattice constant of a satisfies:
1.6 nm<a<1.7 nm.

4. The phosphor according to claim 1 wherein the crystal represented by A 26 D 51 X 86 is a crystal that belongs to a space group of P-43n wherein “−4” represents 4 overbar and the space group is a 218th space group of International Tables for Crystallography.

5. The phosphor according to claim 1 wherein the inorganic substance has a chemical composition represented by A a D d E e X x M m wherein a+d+e+x+m=1 and parameters a, d, e, x, and m satisfy:
0.09≤a≤0.18,

0.26≤d≤0.33,

0≤e≤0.1,

0.5≤x≤0.57, and

0.0001≤m≤0.07.

6. The phosphor according to claim 5 wherein the parameters a, d, e, x, and m satisfy:
0.15≤a≤0.17,

0.3≤d≤0.33,

0≤e≤0.1,

0.52≤x≤0.55, and

0.0001≤m≤0.05.

7. The phosphor according to claim 1 wherein the crystal represented by A 26 D 51 X 86 is Ba 26 Si 51 O 2 N 84 .

8. The phosphor according to claim 1 wherein the M is Eu; the inorganic substance has a chemical composition represented by A a D d E e X x M m wherein a+d+e+x+m=1; and
the parameter m of the M element satisfies:
0.0001≤m≤0.05.

9. The phosphor according to claim 1 wherein light having a maximum value of an emission peak at a wavelength in a range of 630 nm or longer and 850 nm or shorter is emitted as light having a wavelength of 300 nm or longer and 600 nm or shorter is irradiated.

10. A manufacturing method of a phosphor as defined in claim 1 comprising the step of: firing a raw material mixture, which is a mixture of metallic compounds and is capable of constituting the phosphor by firing, in an inert atmosphere including nitrogen in a temperature range that is 1400° C. or higher and is 2200° C. or lower.

11. The manufacturing method according to claim 10 wherein the mixture of metallic compounds include one or more kinds of compounds including A being selected from a group consisting of nitride, oxynitride, oxide, carbonate, and fluoride that include A wherein A is at least one or more kinds of elements selected from a group consisting of Mg, Ca, Sr, and Ba; one or more kinds of compounds including D being selected from a group consisting of nitride, oxynitride, oxide, carbonate, and fluoride that include D wherein D is Si element; if necessary, one or more kinds of compounds including E being selected from a group consisting of nitride, oxynitride, oxide, carbonate, and fluoride that include E wherein E is at least one or more kinds of elements selected from a group consisting of B, Al, Ga, and In+; and one or more kinds of compounds including M being selected from a group consisting of nitride, oxynitride, oxide, carbonate, and fluoride that include M wherein M is at least one or more kinds of elements selected from a group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb.

12. A light emitting device comprising: at least a phosphor as defined in claim 1 and an excitation source emitting light having a wavelength in a range of 300 nm or longer and 600 nm or shorter.

13. The light emitting device according to claim 12 wherein the excitation source is a light-emitting diode (LED) or a laser diode (LD).

14. The light emitting device according to claim 12 further comprising: one or more kinds of phosphors emitting light having a maximum value of an emission peak at a wavelength in a range of 400 nm or longer and 760 nm or shorter by irradiating light from the excitation source.

15. The light emitting device according to claim 14 wherein the one or more kinds of phosphors are one or more kinds of phosphors selected from a group consisting of AlN: (Eu, Si), BaMgAl 10 O 17 :Eu, SrSi 9 Al 19 ON 31 :Eu, LaSi 9 Al 19 N 32 :Eu, α-sialon: Ce, JEM: Ce, β-sialon: Eu, (Ba, Sr, Ca, Mg) 2 SiO 4 :Eu, (Ca, Sr, Ba) Si 2 O 2 N 2 :Eu, YAG: Ce, α-sialon:Eu, CaAlSiN 3 :Ce, La 3 Si 6 N 11 :Ce, CaAlSiN 3 :Eu, (Ca, Sr) AlSiN 3 :Eu, Ca 2 Si 5 N 8 :Eu, and Sr 2 Si 5 N 8 :Eu.

16. The light emitting device according to claim 12 wherein the light-emitting device is any one of an illuminating device, a backlight emission source for a liquid crystal panel, a lamp for a projector, an infrared lighting device, or a light source for an infrared measuring device.

Assignees

• Nat Inst Materials Science

Inventors

• Hirosaki Naoto
• Takeda Takashi
• Funahashi Shiro

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title