Light detection with semiconductor photodiodes

Patent metadata

Field	Value
Publication number	US-12176453-B2
Application number	US-202318528920-A
Country	US
Kind code	B2
Filing date	Dec 5, 2023
Priority date	Jan 9, 2020
Publication date	Dec 24, 2024
Grant date	Dec 24, 2024

Abstract

An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.

First claim

The invention claimed is:

1. An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component, the component comprising:
a silicon photomultiplier for:
measuring the intensity of the light signal received by the component, and
outputting a measurement signal that is indicative of the light intensity of the received light signal;

a comparator circuit comprising a first input section, a second input section and an output section,
wherein the comparator circuit is operatively connected to the silicon photomultiplier via its first input section; and
wherein the comparator circuit is adapted to:
receive, via its first input section, the measurement signal outputted by the silicon photomultiplier,
receive, via its second input section, a sensitivity threshold value representing the intensity contribution of background light to the received light signal,
suppress the measurement signal during time intervals where the measurement signal is smaller or equal to the sensitivity threshold value, and
output, as a light bursts signal indicative of the light bursts detected in the light signal, the suppressed measurement signal;

wherein each single photon avalanche diode of the silicon photomultiplier is quenched.

2. The photodetecting component according to claim 1 , further comprising a calibration circuit for adjusting a sensitivity of the photodetecting component to current background light conditions, wherein the calibration circuit is configured to adapt the sensitivity threshold value at the second input section of the comparator circuit as a function of the intensity of the background light present in the received light signal.

3. The photodetecting component according to claim 2 , wherein the calibration circuit has a calibration trigger input section for receiving a calibration triggering signal, and
wherein the calibration circuit is adapted to:
a) receive, via its input section, a calibration triggering signal;
b) upon receipt of a calibration triggering signal, set the value at the second input section of the comparator circuit to a minimum calibration threshold value;
c) obtain an output signal at the output section of the comparator circuit; and
d) set a maximum value of the obtained output signal as the new sensitivity threshold value.

4. The photodetecting component according to claim 1 , further comprising a counting circuit for:
receiving, as an input, the light bursts signal outputted by the comparator circuit, counting a number of light bursts in the received light bursts signal, and
outputting a light bursts rate signal indicative of the number of light bursts per unit time in the light signal received by the photodetecting component.

5. The photodetecting component according to claim 1 , wherein each single photon avalanche diode of the silicon photomultiplier is passively quenched.

6. The photodetecting component according to claim 5 , further comprising an active quenching circuit coupled to the silicon photomultiplier.

7. The photodetecting component according to claim 1 , wherein each single photon avalanche diode of the silicon photomultiplier is actively quenched.

8. The photodetecting component according to claim 1 , further comprising a power supply for the silicon photomultiplier.

9. The photodetecting component according to claim 8 , wherein the power supply comprises a DC-DC converter.

10. The photodetecting component according to claim 1 , wherein the silicon photomultiplier is an infrared silicon photomultiplier.

11. An eye tracking device comprising the photodetecting component according to claim 1 .

12. An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component, the component comprising:
a silicon photomultiplier for:
measuring the intensity of the light signal received by the component, and
outputting a measurement signal that is indicative of the light intensity of the received light signal;

a comparator circuit comprising a first input section, a second input section and an output section,
wherein the comparator circuit is operatively connected to the silicon photomultiplier via its first input section; and
wherein the comparator circuit is adapted to:
receive, via its first input section, the measurement signal outputted by the silicon photomultiplier,
receive, via its second input section, a sensitivity threshold value representing the intensity contribution of background light to the received light signal,
suppress the measurement signal during time intervals where the measurement signal is smaller or equal to the sensitivity threshold value, and
output, as a light bursts signal indicative of the light bursts detected in the light signal, the suppressed measurement signal;

wherein the silicon photomultiplier is an infrared silicon photomultiplier.

13. An eye tracking device comprising an integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component, the component comprising:
a silicon photomultiplier for:
measuring the intensity of the light signal received by the component, and
outputting a measurement signal that is indicative of the light intensity of the received light signal;

a comparator circuit comprising a first input section, a second input section and an output section,
wherein the comparator circuit is operatively connected to the silicon photomultiplier via its first input section; and
wherein the comparator circuit is adapted to:
receive, via its first input section, the measurement signal outputted by the silicon photomultiplier,
receive, via its second input section, a sensitivity threshold value representing the intensity contribution of background light to the received light signal,
suppress the measurement signal during time intervals where the measurement signal is smaller or equal to the sensitivity threshold value, and

output, as a light bursts signal indicative of the light bursts detected in the light signal, the suppressed measurement signal.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram 0Pto Semiconductors Gmbh

Inventors

• Mazzillo Massimo Cataldo
• Boescke Tim
• Zinkl Wolfgang

Classifications

• H10F30/2955

  Shallow PN junction radiation detectors · CPC title

• H10F30/222

  the potential barrier being a PN heterojunction · CPC title

• H10F30/2255 Primary

  in which the active layers form heterostructures, e.g. SAM structures · CPC title

• H10F30/225 Primary

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• H01L31/1185

  Electricity · mapped topic