Image sensor structure including nanowire structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-12176375-B2
Application number	US-202117322599-A
Country	US
Kind code	B2
Filing date	May 17, 2021
Priority date	Apr 16, 2021
Publication date	Dec 24, 2024
Grant date	Dec 24, 2024

Abstract

An image sensor structure including a substrate, a nanowire structure, a first conductive line, a second conductive line, and a third conductive line is provided. The nanowire structure includes a first doped layer, a second doped layer, a third doped layer, and a fourth doped layer sequentially stacked on the substrate. The first doped layer and the third doped layer have a first conductive type. The second doped layer and the fourth doped layer have a second conductive type. The first conductive line is connected to a sidewall of the second doped layer. The second conductive line is connected to a sidewall of the third doped layer. The third conductive line is connected to the fourth doped layer.

First claim

What is claimed is:

1. An image sensor structure, comprising:
a substrate;
a nanowire structure comprising a first doped layer, a second doped layer, a third doped layer, and a fourth doped layer sequentially stacked on the substrate, wherein the first doped layer and the third doped layer have a first conductive type, and the second doped layer and the fourth doped layer have a second conductive type;
a first conductive line connected to a sidewall of the second doped layer;
a second conductive line connected to a sidewall of the third doped layer; and
a third conductive line connected to the fourth doped layer, wherein
the first conductive type and the second conductive type are different conductive types,
a maximum width of the first doped layer, a maximum width of the second doped layer, a maximum width of the third doped layer, and a maximum width of the fourth doped layer are the same, and
a cross-sectional shape of the first conductive line is L-shaped,
a cross-sectional shape of the second conductive line is L-shaped,
an entire topmost surface of the first conductive line is lower than an entire topmost surface of the second doped layer, and
an entire topmost surface of the second conductive line is lower than an entire topmost surface of the third doped layer.

2. The image sensor structure according to claim 1 , wherein the first doped layer is a portion of the substrate, and a top surface of the first doped layer is higher than a top surface of another portion of the substrate.

3. The image sensor structure according to claim 1 , wherein the first doped layer and the second doped layer form a first image sensing device, the second doped layer and the third doped layer form a second image sensing device, and the third doped layer and the fourth doped layer form a third image sensing device.

4. The image sensor structure according to claim 3 , wherein the first image sensing device, the second image sensing device, and the third image sensing device comprise photodiodes.

5. The image sensor structure according to claim 1 , wherein
a dopant concentration of the second doped layer is greater than a dopant concentration of the first doped layer,
a dopant concentration of the third doped layer is greater than the dopant concentration of the second doped layer, and
a dopant concentration of the fourth doped layer is greater than the dopant concentration of the third doped layer.

6. The image sensor structure according to claim 5 , wherein
the dopant concentration of the first doped layer is 1×10 15 ions/cm 3 to 5×10 15 ions/cm 3 ,
the dopant concentration of the second doped layer is 1×10 16 ions/cm 3 to 5×10 16 ions/cm 3 ,
the dopant concentration of the third doped layer is 1×10 17 ions/cm 3 to 5×10 17 ions/cm 3 , and
the dopant concentration of the fourth doped layer is 1×10 18 ions/cm 3 to 5×10 18 ions/cm 3 .

7. The image sensor structure according to claim 1 , wherein the third conductive line is connected to a top surface of the fourth doped layer.

8. The image sensor structure according to claim 1 , further comprising:
a first dielectric layer disposed on the substrate, wherein the first conductive line is disposed on the first dielectric layer;
a second dielectric layer disposed on the first dielectric layer and the first conductive line, wherein the second conductive line is disposed on the second dielectric layer; and
a third dielectric layer disposed on the second dielectric layer and the second conductive line.

9. The image sensor structure according to claim 1 , further comprising:
a first conductive plug connected to the first conductive line; and
a second conductive plug connected to the second conductive line.

10. The image sensor structure according to claim 9 , further comprising:
a fourth conductive line connected to the first conductive plug; and
a fifth conductive line is connected to the second conductive plug.

Assignees

• United Microelectronics Corp

Inventors

• Zhan Zhaoyao
• Feng Jing
• Ding Qianwei
• Jiang Xiaohong
• Tey Ching-Hwa

Classifications

• H10F39/8033

  Photosensitive area · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/014 Primary

  of CMOS image sensors · CPC title

• H10F39/1825 Primary

  Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures · CPC title

• H01L27/14689

  Electricity · mapped topic