Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

Patent metadata

Field	Value
Publication number	US-12173403-B2
Application number	US-202117244990-A
Country	US
Kind code	B2
Filing date	Apr 30, 2021
Priority date	May 31, 2018
Publication date	Dec 24, 2024
Grant date	Dec 24, 2024

Abstract

Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

First claim

What is claimed is:

1. A method for deposition of a Group 6 transition metal-containing film on a substrate, the method comprising:
First, introducing a vapor of the Group 6 transition metal-containing film forming composition into a reactor containing a substrate and depositing at least part of the precursor onto the substrate to form the Group 6 transition metal-containing film wherein the composition comprises a precursor having the formula MEE′XX′·L n , wherein M=Mo or W; E and E′ independently=O or S; X and X′ independently=Cl, Br, or I; L is an adduct; and n=1 or 2, and
Second, introducing a vapor or a reactant to thereby form an M containing film selected from a pure M film, an M silicide or germanide film, an M oxide film, an M nitride film, an M dichalcogenide film, or an M oxynitride film.

2. The method of claim 1 , wherein the Group 6 transition metal-containing film is selectively deposited onto the substrate.

3. The method of claim 1 , wherein L is an ester.

4. The method of claim 1 , wherein the precursor is MoO 2 Cl 2 ( n C 5 H 11 —CN) 2 , MoO 2 Cl 2 ·(methyl hexanoate) 2 , MoO 2 Cl 2 ·(amyl acetate) 2 , or MoO 2 Cl 2 ·( n Bu-O—CH 2 —CH 2 —O— n Bu).

Assignees

• Air Liquide

Inventors

• Arteaga Muller Rocio Alejandra
• Rochat Raphael
• Sanchez Antonio
• Girard Jean-Marc
• Blasco Nicolas
• Marques-Gonzalez Santiago
• Lansalot-Matras Clément
• Lee Jooho
• Wan Zhiwen

Classifications

• C07F11/00 Primary

  Compounds containing elements of Groups 6 or 16 of the Periodic Table · CPC title

• C07F11/005

  compounds without a metal-carbon linkage · CPC title

• C23C16/4481

  by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/34 Primary

  Nitrides {(C23C16/303 takes precedence)} · CPC title