Polycrystalline silicon fragments and process for comminuting polycrystalline silicon rods
US-10876221-B2 · Dec 29, 2020 · US
US12172170B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12172170-B2 |
| Application number | US-201917639309-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 29, 2019 |
| Priority date | Aug 29, 2019 |
| Publication date | Dec 24, 2024 |
| Grant date | Dec 24, 2024 |
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The present disclosure relates to a method for producing polycrystalline silicon fragments. The process includes (a) providing a polycrystalline silicon rod, (b) working the surface of the silicon rod by means of a hammer or needle hammer to remove at least a portion of a layer of the surface of the polycrystalline silicon rod, and (c) reducing the silicon rod to fragments. Wherein an amount of impact energy expended by the hammer and/or needle hammer is from 1 J to 15 J.
Opening claim text (preview).
The invention claimed is: 1. A process for producing silicon chunks, comprising the steps of: a) providing a silicon rod; b) treating a surface of the silicon rod with a hammer and/or a needle hammer for at least partial removal of a silicon layer of the surface of the silicon rod; c) comminuting the silicon rod into chunks using a thermal crushing process or a high-voltage impulse crushing or a jaw crusher, a roller crusher, a chisel or a sledgehammer apparatus; and wherein the silicon layer of the surface of the silicon rod is removed to a depth of 1 to 10 mm by an impact energy applied with the hammer and/or needle hammer of 1 to 15 J. 2. The process of claim 1 , wherein the impact energy applied with the hammer and/or needle hammer is 2 to 10 J or wherein the impact energy applied with the hammer and/or needle hammer is 3 to 8 J. 3. The process of claim 1 , wherein the needle hammer comprises 6 to 24 needles, wherein the needle hammer comprises 6 to 18 needles, or wherein the needle hammer comprises 6 to 12, needles. 4. The process of claim 1 , wherein the needle hammer comprises needles; and wherein the needles of the needle hammer each have a circular impact surface having a radius of 0.5 to 1.5 mm, or wherein the needles of the needle hammer each have a circular impact surface having a radius of 0.5 to 1 mm. 5. The process of claim 4 , wherein the needle hammer is operated with an impact speed of 2000 to 5000 min −1 , wherein the needle hammer is operated with an impact speed of 2500 to 4000 min −1 , or wherein the needle hammer is operated with an impact speed of 2800 to 3500 min −1 . 6. The process of claim 1 , wherein the needle hammer is an electrically, a pneumatically or a hydraulically operated needle hammer. 7. The process of claim 1 , wherein the needle hammer comprises needles; and wherein the needles of the needle hammer and/or at least a polysilicon-contacting part of the hammer is made of a material selected from the group comprising carbide, metal-ceramic, ceramic and combinations thereof. 8. The process of claim 1 , wherein the needle hammer comprises needles; and wherein the needles of the needle hammer and/or at least a polysilicon-contacting part of the hammer is made of tungsten carbide, tungsten carbide with a cobalt binder, tungsten carbide with a nickel binder, titanium carbide, chromium carbide with a nickel-chromium alloy binder, tantalum carbide, niobium carbide, silicon nitride, silicon carbide in a matrix, aluminum nitride, titanium carbide with cobalt and titanium carbonitride, nickel, nickel-cobalt alloy, iron and combinations thereof. 9. The process of claim 1 , wherein the silicon layer of the surface of the silicon rod is removed to the depth of 1 to 5 mm or wherein the silicon layer of the surface of the silicon rod is removed to the depth of 1 to 3 mm. 10. The process of claim 1 , wherein roughness parameters Ra and/or RPc according to DIN EN ISO 4287/4288 and DIN EN 10049 of the silicon rod are determined between steps a) and b) and/or between steps b) and c). 11. The process of claim 1 , wherein the step b) is repeated after a determination of the roughness of the treated silicon rod. 12. The process of claim 1 , wherein the silicon layer of the surface of the silicon rod at least partially removed is a surface layer of popcorn. 13. The process of claim 1 , wherein the silicon layer of the surface of the silicon rod at least partially removed is a surface layer of popcorn; and wherein the popcorn layer of the surface of the silicon rod is removed to the depth of 1 to 5 mm or wherein the popcorn layer of the surface of the silicon rod is removed to the depth of 1 to 3 mm.
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