Piezo-actuated MEMS resonator with reduced nonlinear tcf

Patent metadata

Field	Value
Publication number	US-12166464-B2
Application number	US-202418402488-A
Country	US
Kind code	B2
Filing date	Jan 2, 2024
Priority date	Feb 9, 2014
Publication date	Dec 10, 2024
Grant date	Dec 10, 2024

Abstract

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

First claim

What is claimed is:

1. An integrated circuit comprising:
a die;
a microelectromechanical systems (MEMS) device on the die, the MEMS device having a body configured to deflect or vibrate during operation of the integrated circuit, the body having a piezoelectric material layer and one or more layers of crystalline silicon, including at least one degenerately doped silicon layer, the MEMS device having at least one layer operable to act as an electrode, to produce a signal which is dependent on the deflection or vibration of the body; and
wherein the piezoelectric material layer is characterized by a stiffness having a first turnover temperature and a locally-parabolic behavior adjacent the first turnover temperature which is a first one of convex or concave, and wherein the one or more layers of crystal silicon are characterized by a stiffness having a second turnover temperature and a locally-parabolic behavior adjacent the second turnover temperature which is a second one of convex or concave; and
wherein the body is fabricated such that the first turnover temperature and the second turnover temperature are matched within a threshold, and such that a frequency variation of the signal as a function of an operating temperature of the MEMS device over a predetermined temperature range lies within a predetermined threshold.

2. The integrated circuit of claim 1 wherein:
the MEMS device comprises a MEMS resonator, the body is configured to vibrate, at a resonant frequency, during operation of the MEMS device, and the signal is a frequency signal; and
the integrated circuit further comprises a temperature sensor and active compensation circuitry;
the frequency signal exhibits a frequency which varies dependent on the operating temperature; and
the integrated circuit is to, dependent on the frequency signal, an output of the temperature sensor and operation of the active compensation circuitry, generate a timing signal having a frequency with reduced variation with respect to change in the operating temperature relative to the frequency variation of the signal with respect to change in the operating temperature.

3. The integrated circuit of claim 1 wherein the MEMS device comprises at least one spring-bearing anchor that laterally anchors the body to the die, and wherein the at least one spring-bearing anchor also comprises the piezoelectric material layer and the one or more layers of crystalline silicon.

4. The integrated circuit of claim 3 wherein the body and the at least one spring-bearing anchor are characterized by the lack of a metal electrode interface between the one or more layers of crystalline silicon and the piezoelectric material layer.

5. The integrated circuit of claim 1 wherein the one or more layers of crystalline silicon comprises each of a single crystal silicon layer and a polycrystal silicon layer and wherein the at least one degenerately doped layer comprises at least one of the single crystal silicon layer or the doped polycrystal silicon layer.

6. The integrated circuit of claim 5 wherein the electrode is provided by a degenerately doped layer of the at least one degenerately doped layer.

7. The integrated circuit of claim 1 wherein:
the MEMS device comprises a MEMS resonator, a temperature sensor and a heater;
wherein the body is configured to vibrate, at a resonant frequency, during operation of the MEMS device, and wherein the signal is a frequency signal; and
the integrated circuit further comprises circuitry to heat the body so as to urge the body toward a predetermined temperature using feedback provided by the temperature sensor.

8. The integrated circuit of claim 7 wherein the circuitry is active compensation circuitry configured to, dependent on the frequency signal a temperature sensed by the temperature sensor, control the heater so as to urge the body to a predetermined temperature and thereby minimize variation in frequency of the frequency signal.

9. The integrated circuit of claim 7 wherein the circuitry is circuitry is configured to cause the heater to heat the body during a calibration mode of the integrated circuit, and wherein:
the integrated circuit further comprises active compensation circuitry and a programmable storage circuit;
the frequency signal exhibits a frequency which varies dependent on the operating temperature; and
the integrated circuit is to, dependent on the frequency signal, dependent on an output of the temperature sensor, and dependent on operation of the active compensation circuitry, generate a timing signal having a reduced variation in frequency as a function of change in the operating temperature relative to a variation in a frequency of the frequency signal as a function of change in the operating temperature, said generation between dependent on frequency stability information identified from the calibration mode and stored in the programmable storage circuit.

10. The integrated circuit of claim 7 wherein the heater comprises a thermistor.

11. An oscillator integrated circuit comprising:
a die;
a microelectromechanical systems (MEMS) resonator on the die, the MEMS resonator having a body configured to deflect or vibrate during operation of the oscillator integrated circuit, the body having a piezoelectric material layer and one or more layers of crystalline silicon, including at least one degenerately doped silicon layer, the MEMS resonator having at least one layer operable to act as an electrode, to produce a frequency signal which is dependent on the deflection or vibration of the body;
at least one electrical contact coupled to the electrode, to output a timing signal which is dependent on the frequency signal; and
wherein the piezoelectric material layer is characterized by a stiffness having a first turnover temperature and a locally-parabolic behavior adjacent the first turnover temperature which is a first one of convex or concave, and wherein the one or more layers of crystal silicon are characterized by a stiffness having a second turnover temperature and a locally-parabolic behavior adjacent the second turnover temperature which is a second one of convex or concave; and
wherein the body is fabricated such that the first turnover temperature and the second turnover temperature are matched within a threshold, and such that a frequency variation of the signal as a function of an operating temperature of the MEMS resonator over a predetermined temperature range lies within a predetermined threshold.

12. The oscillator integrated circuit of claim 11 wherein:
the oscillator integrated circuit further comprises a temperature sensor and active compensation circuitry;
the frequency signal exhibits a frequency which varies dependent on the operating temperature; and
the oscillator integrated circuit is to, dependent on the frequency signal, an output of the temperature sensor and operation of the active compensation circuitry, generate the timing signal so as to have a frequency with reduced variation as a function of change in the operating temperature, relative to variation in frequency of the frequency signal as a function of change in the operating temperature.

13. The oscillator integrated circuit of claim 11 wherein the MEMS device comprises at least one spring-bearing anchor that laterally anchors the body to the die, and wherein the at least one spring-bearing anchor also comprises the piezoelectric material layer and the one or more layers of crystalline silicon.

14. The oscillator integrated circuit of claim 13 wherein the body and the at least one spring-bearing anchor are characterized by the lack of a metal electrode interface b

Assignees

• SiTime Coporation
• Sitime Corp

Inventors

• Doll Joseph C
• Hagelin Paul M
• Hill Ginel C
• Miller Nicholas
• Grosjean Charles I

Classifications

• H10N30/878

  the principal material being non-metallic, e.g. oxide or carbon based · CPC title

• H10N30/074

  by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing · CPC title

• H10N30/06

  Forming electrodes or interconnections, e.g. leads or terminals · CPC title

• H10N30/04

  Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning · CPC title

• H03H2009/02307

  Dog-bone-like structure, i.e. the elongated part of the "bone" is doubly clamped · CPC title