Semiconductor nanoparticle aggregate, semiconductor nanoparticle aggregate dispersion liquid, semiconductor nanoparticle aggregate composition, and semiconductor nanoparticle aggregate cured film

Patent metadata

Field	Value
Publication number	US-12166159-B2
Application number	US-202017757103-A
Country	US
Kind code	B2
Filing date	Dec 4, 2020
Priority date	Dec 17, 2019
Publication date	Dec 10, 2024
Grant date	Dec 10, 2024

Abstract

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 605 nm to 655 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 28 nm or less, (2) a standard deviation of a peak wavelength of the emission spectrum is 10 nm or more and 30 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 12 nm or less.

First claim

The invention claimed is:

1. A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles comprising a core comprising In and P and a shell comprising one or more layers, wherein
a peak wavelength (λ 1 MAX ) of an emission spectrum (λ 1 ) when the semiconductor nanoparticle aggregate is excited with excitation light of 450 nm in a state where the semiconductor nanoparticle aggregate is dispersed in a dispersion medium is from 605 nm to 655 nm and a full width at half maximum (FWHM 1 ) of the emission spectrum (λ 1 ) is 43 nm or less,
an emission spectrum (λ 2 ) from each particle obtained by exciting the semiconductor nanoparticles constituting the semiconductor nanoparticle aggregate with excitation light of 445 nm satisfies all of following requirements (1) to (3):
(1) an average value of a full width at half maximum (FWHM 2 ) of the emission spectrum (λ 2 ) is 28 nm or less,
(2) a standard deviation (SD 1 ) of a peak wavelength (λ 2 MAX ) of the emission spectrum (λ 2 ) is 10 nm or more and 30 nm or less, and
(3) a standard deviation (SD 2 ) of the full width at half maximum (FWHM 2 ) of the emission spectrum (λ 2 ) is 12 nm or less.

2. The semiconductor nanoparticle aggregate according to claim 1 , wherein the full width at half maximum (FWHM 1 ) is 38 nm or less.

3. The semiconductor nanoparticle aggregate according to claim 1 , wherein the average value of the full width at half maximum (FWHM 2 ) is 25 nm or less.

4. The semiconductor nanoparticle aggregate according to claim 1 , wherein the standard deviation (SD 2 ) is 7 nm or less.

5. The semiconductor nanoparticle aggregate according to claim 1 , wherein
the full width at half maximum (FWHM 1 ) is 35 nm or less,
the average value of the full width at half maximum (FWHM 2 ) is 24 nm or less, and
the standard deviation (SD 2 ) is 6 nm or less.

6. The semiconductor nanoparticle aggregate according to claim 1 , wherein a quantum yield (QY) of the semiconductor nanoparticle aggregate is 80% or more.

7. The semiconductor nanoparticle aggregate according to claim 6 , wherein the quantum yield (QY) of the semiconductor nanoparticle aggregate is 85% or more.

8. The semiconductor nanoparticle aggregate according to claim 7 , wherein the quantum yield (QY) of the semiconductor nanoparticle aggregate is 90% or more.

9. The semiconductor nanoparticle aggregate according to claim 1 , wherein
the semiconductor nanoparticles comprise at least In, P, Zn, Se, and halogen, and
in the semiconductor nanoparticles, molar ratios of P, Zn, Se, and halogen relative to In in terms of atoms are P: 0.20 to 0.95, Zn: 11.00 to 50.00, Se: 7.00 to 25.00, and halogen: 0.80 to 15.00.

10. A semiconductor nanoparticle aggregate dispersion liquid, comprising
the semiconductor nanoparticle aggregate as claimed in claim 1 dispersed in an organic dispersion medium.

11. A semiconductor nanoparticle aggregate composition, comprising
the semiconductor nanoparticle aggregate as claimed in claim 1 dispersed in a monomer or a prepolymer.

12. A semiconductor nanoparticle aggregate cured film, comprising
the semiconductor nanoparticle aggregate as claimed in claim 1 dispersed in a macromolecule matrix.

Assignees

• Shoei Chemical Ind Co

Inventors

• Umeda Naoki
• Kido Makoto
• Mitsuka Yuko
• Sasaki Hirokazu

Classifications

• H10H20/8513 Primary

  having two or more wavelength conversion materials · CPC title

• H10H20/8515

  not being in contact with the bodies · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title

• C09K11/70 Primary

  containing phosphorus · CPC title