Light-emitting device and display device having the same

Patent metadata

Field	Value
Publication number	US-12166151-B2
Application number	US-202117389467-A
Country	US
Kind code	B2
Filing date	Jul 30, 2021
Priority date	Jul 31, 2020
Publication date	Dec 10, 2024
Grant date	Dec 10, 2024

Abstract

A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a semiconductor stack generating a first light;
a filter formed on the semiconductor stack, comprising a first surface facing the semiconductor stack and a second surface opposite to the first surface; and
a transparent conductive layer formed on the semiconductor stack;
wherein:
the filter comprises a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked,
a portion of the first light is transmitted by the filter and extracted from the second surface,
the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and
the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range of less than 10 degrees.

2. The light-emitting device according to claim 1 , further comprising an electrode formed on and electrically connecting the semiconductor stack, wherein the filter and the electrode are disposed on opposite sides of the semiconductor stack.

3. The light-emitting device according to claim 2 , further comprising a substrate located between the semiconductor stack and the filter, wherein the first surface contacts the substrate.

4. The light-emitting device according to claim 2 , further comprising a reflective structure formed between the semiconductor stack and the electrode.

5. The light-emitting device according to claim 4 , wherein the reflective structure comprises a metal layer electrically connected to the electrode.

6. The light-emitting device according to claim 4 , wherein the reflective structure comprises non-conductive materials, wherein the reflective structure comprises an opening and the electrode is filled in the opening and electrically connected to the semiconductor stack.

7. The light-emitting device according to claim 2 , wherein the first surface of the filter contacts the semiconductor stack.

8. The light-emitting device according to claim 1 , further comprising:
a substrate located under the semiconductor stack; and
an electrode located on the semiconductor stack;
wherein the first surface contacts the transparent conductive layer and the filter comprises an opening exposing the electrode.

9. The light-emitting device according to claim 1 , wherein the light-emitting device has a diagonal length less than 300 μm.

10. The light-emitting device according to claim 1 , wherein a light emitted by the light-emitting device comprises a front side part and a lateral side part, wherein an intensity of the front side part of the light is greater than that of the lateral side part of the light.

11. The light-emitting device according to claim 1 , wherein the filter further comprises a bottom layer between the semiconductor stack and the pluralities of the first dielectric layers and the second dielectric layers, wherein the bottom layer comprises dielectric material and a thickness greater than those of the pluralities of the first dielectric layers and the second dielectric layers.

12. The light-emitting device according to claim 1 , wherein the filter further comprises a top layer and the pluralities of the first dielectric layers and the second dielectric layers are formed between the top layer and the semiconductor stack, wherein the top layer comprises dielectric material and a thickness greater than those of the pluralities of the first dielectric layers and the second dielectric layers.

13. A display device, comprising a plurality of pixels, wherein one of the plurality of pixels comprises the light-emitting device according to claim 1 .

14. A light-emitting package, comprising the light-emitting device according to claim 1 and an encapsulated material covering a side surface of the light-emitting device.

15. The light-emitting package according to claim 14 , wherein the encapsulated material comprises a functional element which comprises a reflector, a light absorber, a light blocking layer or another filter.

Assignees

• Epistar Corp

Inventors

• Cho Heng-Ying
• Shen Li-Yu
• Hung Yu-Yi
• Ou Chen
• Chang li-ming

Classifications

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/814

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/856

  Reflecting means · CPC title