Electronic device

Patent metadata

Field	Value
Publication number	US-12166033-B2
Application number	US-202117513865-A
Country	US
Kind code	B2
Filing date	Oct 28, 2021
Priority date	Nov 26, 2020
Publication date	Dec 10, 2024
Grant date	Dec 10, 2024

Abstract

The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

First claim

What is claimed is:

1. An electronic device, comprising:
a substrate;
a transistor disposed on the substrate, wherein the transistor is a high electron mobility transistor; and
a variable capacitor disposed on the substrate and adjacent to the transistor, wherein the variable capacitor is a variable capacitance diode;
wherein a material of the transistor and a material of the variable capacitor both comprise a III-V semiconductor material,
wherein the variable capacitor comprises:
a first-type semiconductor layer disposed on the substrate;
a first part of a second-type semiconductor layer disposed on the first-type semiconductor layer;
a first-type pad disposed on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer; and
a second-type pad disposed on the first part of the second-type semiconductor layer and electrically connected to the first part of the second-type semiconductor layer,

wherein the transistor comprises:
a second part of the second-type semiconductor layer disposed on the first-type semiconductor layer;
a semiconductor material layer disposed on the second part of the second-type semiconductor layer;
a gate disposed on the semiconductor material layer; and
a source and a drain respectively disposed on the semiconductor material layer.

2. The electronic device of claim 1 , wherein a conductivity type of the first-type semiconductor layer is different from a conductivity type of the second-type semiconductor layer.

3. The electronic device of claim 1 , wherein the first-type pad is disposed between the first part and the second part of the second-type semiconductor layer.

4. The electronic device of claim 1 , wherein the first-type pad is in contact with the first-type semiconductor layer.

5. The electronic device of claim 1 , wherein the first-type pad is not in contact with the second-type semiconductor layer.

6. The electronic device of claim 1 , wherein the source is regarded as the first-type pad.

7. The electronic device of claim 1 , wherein the first part and the second part of the second-type semiconductor layer are physically separated from each other.

8. The electronic device of claim 1 , wherein a junction between the first-type semiconductor layer and the first part of the second-type semiconductor layer has a depletion region.

9. The electronic device of claim 1 , wherein the transistor is electrically connected to the variable capacitor.

Assignees

• Innolux Corp

Inventors

• Ting Chin-Lung
• Chi Jen-Hai
• Tseng Chia-Ping
• Yeh Chen-Lin
• Wei Chung-Kuang
• Chou Cheng-Hsu

Classifications

• H10D84/0123

  Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs · CPC title

• H10D84/813

  Combinations of field-effect devices and capacitor only · CPC title

• H10D84/05 Primary

  using Group III-V technology · CPC title

• H10D30/475

  having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs · CPC title

• H10D1/64

  Variable-capacitance diodes, e.g. varactors · CPC title