Optical waveguide element and optical modulation element
US-2023069468-A1 · Mar 2, 2023 · US
US12164185B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12164185-B2 |
| Application number | US-202117797207-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 20, 2021 |
| Priority date | Feb 14, 2020 |
| Publication date | Dec 10, 2024 |
| Grant date | Dec 10, 2024 |
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To provide an optical modulation element whereby reduced drive voltage and suppression of DC drift can be obtained at the same time. An optical modulation element includes: a substrate; and an optical waveguide formed of an electrooptic material film formed on the substrate and having a ridge part which is a protruding portion, and a slab part having a smaller film thickness than the ridge part 11 r . The optical waveguide includes a first waveguide part having a first ridge width and a first slab film thickness and to which an RF signal is applied, and a second waveguide part having a second ridge width and a second slab film thickness different from the first slab film thickness and to which a DC bias is applied.
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What is claimed is: 1. An optical modulation element comprising: a substrate; and an optical waveguide formed of an electrooptic material film formed on the substrate and having a ridge part which is a protruding portion and a slab part having a smaller film thickness than the ridge part, wherein the optical waveguide includes: a first waveguide part having a first ridge width and a first slab film thickness and to which an RF signal is applied; and a second waveguide part having a second ridge width and a second slab film thickness different from the first slab film thickness and to which a DC bias is applied, wherein the second ridge width is larger than the first ridge width. 2. The optical modulation element according to claim 1 , wherein the second slab film thickness is larger than the first slab film thickness. 3. The optical modulation element according to claim 1 , wherein the first slab film thickness is less than 0.6 μm, and the second slab film thickness is 0.6 μm or more. 4. The optical modulation element according to claim 1 , wherein the electrooptic material film is a lithium niobate film, and a c-axis of the lithium niobate film is oriented perpendicular to a main surface of the substrate. 5. The optical modulation element according to claim 1 further comprising: a signal electrode that applies the RF signal to the first waveguide part; and a bias electrode that applies the DC bias to the second waveguide part. 6. The optical modulation element according to claim 1 , wherein the optical waveguide is a Mach-Zehnder optical waveguide having: an input waveguide; a demultiplexer demultiplexing light propagating through the input waveguide; first and second waveguides extending in parallel from the demultiplexer; a multiplexer multiplexing lights propagating through the first and second waveguides; and an output waveguide through which light output from the multiplexer propagates. 7. The optical modulation element according to claim 2 , wherein the electrooptic material film is a lithium niobate film, and a c-axis of the lithium niobate film is oriented perpendicular to a main surface of the substrate. 8. The optical modulation element according to claim 2 , further comprising: a signal electrode that applies the RF signal to the first waveguide part; and a bias electrode that applies the DC bias to the second waveguide part. 9. The optical modulation element according to claim 2 , wherein the optical waveguide is a Mach-Zehnder optical waveguide having: an input waveguide; a demultiplexer demultiplexing light propagating through the input waveguide; first and second waveguides extending in parallel from the demultiplexer; a multiplexer multiplexing lights propagating through the first and second waveguides; and an output waveguide through which light output from the multiplexer propagates. 10. An optical modulation element comprising: a substrate; and an optical waveguide formed of an electrooptic material film formed on the substrate and having a ridge part which is a protruding portion and a slab part having a smaller film thickness than the ridge part, wherein the optical waveguide includes: a first waveguide part having a first ridge width and a first slab film thickness and to which an RF signal is applied; and a second waveguide part having a second ridge width and a second slab film thickness different from the first slab film thickness and to which a DC bias is applied, wherein the first slab film thickness is less than 0.6 μm, and wherein the second slab film thickness is 0.6 μm or more. 11. The optical modulation element according to claim 10 , wherein the electrooptic material film is a lithium niobate film, and a c-axis of the lithium niobate film is oriented perpendicular to a main surface of the substrate. 12. The optical modulation element according to claim 10 , further comprising: a signal electrode that applies the RF signal to the first waveguide part; and a bias electrode that applies the DC bias to the second waveguide part. 13. The optical modulation element according to claim 10 , wherein the optical waveguide is a Mach-Zehnder optical waveguide having: an input waveguide; a demultiplexer demultiplexing light propagating through the input waveguide; first and second waveguides extending in parallel from the demultiplexer; a multiplexer multiplexing lights propagating through the first and second waveguides; and an output waveguide through which light output from the multiplexer propagates.
Ridge, rib or the like · CPC title
Lithium niobate (LiNbO3) · CPC title
LiNbO3, LiTaO3 · CPC title
controlled by a high-frequency electromagnetic component in an electric waveguide structure · CPC title
controlled by a high-frequency electromagnetic wave component in an electric waveguide structure · CPC title
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