VCSEL with double oxide apertures

Patent metadata

Field	Value
Publication number	US-12155178-B2
Application number	US-202218062123-A
Country	US
Kind code	B2
Filing date	Dec 6, 2022
Priority date	Aug 14, 2019
Publication date	Nov 26, 2024
Grant date	Nov 26, 2024

Abstract

In one example, a vertical cavity surface emitting laser (VCSEL) may include an active region to produce light at a wavelength, an emission surface to emit the light at the wavelength, a first oxide region spaced apart from the active region by a distance of at least a half-wavelength of the wavelength, a first oxide aperture in the first oxide region, a second oxide region between the first oxide region and the second oxide region, and a second oxide aperture in the second oxide region. The emitted light may have a divergence angle that is based on the respective positions and thicknesses of the first oxide region and the second oxide region.

First claim

What is claimed is:

1. A vertical cavity surface emitting laser (VCSEL) comprising:
an active region configured to produce light at a wavelength;
a first oxide region having a first thickness and spaced apart from the active region by a distance of at least one-half of the wavelength, wherein the first oxide region is located at a second node of a standing wave counted as extending away from the active region;
a top mirror formed over the first oxide region, wherein the first oxide region being between the active region and the top mirror; and
a second oxide region having a second thickness and disposed adjacent to the first oxide region, wherein the first oxide region is between the active region and the second oxide region,
wherein the light has a divergence angle based upon the first thickness of the first oxide region and the second thickness of the second oxide region.

2. The VCSEL of claim 1 , comprising a first aperture in the first oxide region and a second aperture in the second oxide region, wherein the first aperture and the second aperture has a higher conductivity than the respective first oxide region and second oxide region.

3. The VCSEL of claim 2 , wherein at least one of the first aperture and the second aperture comprises one of a circular cross-sectional profile and an elliptical cross-sectional profile.

4. The VCSEL of claim 1 , wherein the first oxide region and the second oxide region result in a numerical aperture range between 0.14 and 0.31.

5. The VCSEL of claim 1 , wherein the second oxide region is between the first oxide region and an emission surface.

6. The VCSEL of claim 1 , comprising a non-oxidized epitaxial region between the first oxide region and the second oxide region.

7. The VCSEL of claim 1 , comprising a first confining layer located at a first side of the active region and a second confining layer located between the active region and the second oxide region.

8. A system comprising:
an array of a plurality of the VCSEL of claim 1 .

9. The system of claim 8 , wherein each VCSEL comprises aa different divergence angle based upon the respective first thickness of the first oxide region and the second thickness of the second oxide region.

10. The system of claim 2 , wherein the second aperture is aligned with the first aperture and the first aperture and the second aperture include a material that has different optical qualities than both the first oxide region and the second oxide region.

11. The system of claim 1 , wherein the second oxide region comprises a second aperture located at a position between a node of the standing wave and an antinode of the standing wave.

12. The system of claim 10 , wherein the first oxide region and the second oxide region of the plurality of VCSELS each result in a respective numerical aperture range between 0.14 and 0.31.

13. The system of claim 9 , wherein each VCSEL comprises a non-oxidized epitaxial region between the first oxide region and the second oxide region.

14. The system of claim 9 , wherein each VCSEL comprises a first confining layer located at a first side of the active region and a second confining layer located between the active region and the second oxide region.

15. The system of claim 8 , wherein each VCSEL comprises a second oxide region disposed adjacent to the first oxide region, and
wherein the first oxide region includes a first aperture and the second oxide region includes a second aperture aligned with the first aperture.

16. The system of claim 15 , wherein at least one of the first aperture and the second aperture comprises one of a circular cross-sectional profile and an elliptical cross-sectional profile.

17. The system of claim 15 , wherein each VCSEL comprises a third oxide region having a third aperture aligned with at least one of the first aperture and the second aperture.

18. The VCSEL of claim 1 , wherein the second oxide region comprises a second aperture located at a node of the standing wave.

19. The VCSEL of claim 1 , wherein the second oxide region comprises a second aperture located between a node and antinode of the standing wave.

20. The VCSEL of claim 1 , wherein at least one of the first oxide region and the second oxide region is disposed within the top mirror.

21. The VCSEL of claim 1 , wherein the second oxide region comprises a second aperture located at a middle position between an antinode and a node of the standing wave.

Assignees

• Ii Vi Delaware Inc

Inventors

• Shi Hanxing
• Dubey Richa
• Gazula Deepa
• Kocot Chris
• Roxlo Charles B

Classifications

• H01S5/18311

  using selective oxidation · CPC title

• H01S5/18333 Primary

  only above the active layer · CPC title

• H01S5/4081

  Near-or far field control · CPC title

• H01S5/18361

  Structure of the reflectors, e.g. hybrid mirrors · CPC title

• H01S5/18344

  characterized by the mesa, e.g. dimensions or shape of the mesa · CPC title