Display device

Patent metadata

Field	Value
Publication number	US-12154915-B2
Application number	US-201917603733-A
Country	US
Kind code	B2
Filing date	Apr 17, 2019
Priority date	Apr 17, 2019
Publication date	Nov 26, 2024
Grant date	Nov 26, 2024

Abstract

A display device includes: a first gate insulating film; a first interlayer insulating film; a lower metal layer; an oxide semiconductor layer; a second gate insulating film; a second gate electrode; a second interlayer insulating film; and an upper metal layer being sequentially provided on a substrate, wherein the oxide semiconductor layer includes a second channel region and a second conductor region, the second gate insulating film is disposed in alignment with the second gate electrode, a first contact hole is provided in the first gate insulating film and the first interlayer insulating film, the lower metal layer includes a second conductor connection wiring line, a protection layer having an island shape is provided between the second conductor region and the second interlayer insulating film, a second contact hole exposing the second conductor connection wiring line is provided in the protection layer and the second interlayer insulating film.

First claim

The invention claimed is:

1. A display device comprising:
a crystalline silicon semiconductor layer;
a first gate insulating film;
a first gate electrode;
a first interlayer insulating film;
a lower metal layer;
an oxide semiconductor layer;
a second gate insulating film;
a second gate electrode;
a second interlayer insulating film; and
an upper metal layer,
the crystalline silicon semiconductor layer, the first gate insulating film, the first gate electrode, the first interlayer insulating film, the lower metal layer, the oxide semiconductor layer, the second gate insulating film, the second gate electrode, the second interlayer insulating film, and the upper metal layer being sequentially provided on a substrate,
wherein the substrate is provided with a first transistor including the crystalline silicon semiconductor layer and a second transistor including the oxide semiconductor layer,
the crystalline silicon semiconductor layer includes a first channel region and a first conductor region,
the oxide semiconductor layer includes a second channel region and a second conductor region,
the second gate insulating film is disposed in alignment with the second gate electrode,
a first contact hole exposing the first conductor region and electrically connecting the first conductor region and the second conductor region is provided in the first gate insulating film and the first interlayer insulating film,
the lower metal layer includes a second conductor connection wiring line in contact with the second conductor region,
the upper metal layer includes an upper layer connection wiring line,
a protection layer having an island shape is provided between the second conductor region and the second interlayer insulating film,
a second contact hole exposing the second conductor connection wiring line is provided in the protection layer and the second interlayer insulating film,
the upper layer connection wiring line is in contact with the second conductor connection wiring line in the second contact hole, and
the second conductor region and the upper layer connection wiring line are electrically connected to each other via the second conductor connection wiring line.

2. The display device according to claim 1 ,
wherein the protection layer is the same layer as the second gate insulating film, and is formed of the same material as the second gate insulating film.

3. The display device according to claim 1 ,
wherein the protection layer is a silicon oxide film, and the second interlayer insulating film is a silicon nitride film.

4. The display device according to claim 1 ,
wherein the oxide semiconductor layer covers an upper surface and a side surface of the lower metal layer.

5. The display device according to claim 1 ,
wherein a third interlayer insulating film is provided between the lower metal layer and the oxide semiconductor layer.

6. The display device according to claim 1 ,
wherein, in the second contact hole, an opening is provided in the second conductor region so as to overlap the second contact hole, and
the opening is larger than the second contact hole in a plan view.

7. The display device according to claim 1 ,
wherein the second conductor region covers the upper surface and the side surface of the lower metal layer.

8. The display device according to claim 1 ,
wherein the lower metal layer includes a lower layer connection wiring line, and
in the first contact hole, the lower layer connection wiring line is in contact with the first conductor region, and the first conductor region and the second conductor region are electrically connected to each other via the lower layer connection wiring line.

9. The display device according to claim 8 ,
wherein the lower layer connection wiring line is provided in an island shape, the upper surface and the side surface of the lower layer connection wiring line being covered by the second conductor region.

10. The display device according to claim 1 ,
wherein the upper metal layer includes a first conductor connection wiring line in contact with the first conductor region,
a third contact hole exposing the first conductor region and electrically connecting the first conductor region and the first conductor connection wiring line is provided in the first gate insulating film, the first interlayer insulating film, and the second interlayer insulating film, and
in the third contact hole, the first conductor connection wiring line is in contact with the first conductor region.

11. The display device according to claim 1 ,
wherein the upper metal layer includes a first gate connection wiring line,
a fourth contact hole exposing the first gate electrode and electrically connecting the first gate electrode and the first gate connection wiring line is provided in the first interlayer insulating film and the second interlayer insulating film, and
in the fourth contact hole, the first gate connection wiring line is in contact with the first gate electrode.

12. The display device according to claim 1 ,
wherein the lower metal layer includes a counter electrode,
the upper metal layer includes an electrode connection wiring line,
a protection layer having an island shape is provided between the second conductor region and the second interlayer insulating film,
a fifth contact hole exposing the counter electrode and electrically connecting the counter electrode and the electrode connection wiring line is provided in the second conductor region, the protection layer, and the second interlayer insulating film, and
in the fifth contact hole, the counter electrode and the electrode connection wiring line are in contact with each other.

13. The display device according to claim 1 ,
wherein a second conductor region corresponding to the first contact hole and a second conductor region corresponding to the second contact hole are different conductor regions that sandwich an identical second channel region.

14. The display device according to claim 10 ,
wherein a first conductor region corresponding to the first contact hole and a first conductor region corresponding to the third contact hole are different conductor regions that sandwich an identical first channel region.

15. The display device according to claim 1 , further comprising:
a pixel circuit,
wherein the pixel circuit includes
a drive transistor configured to control current flowing in a light-emitting element,
a first initialization transistor connected between a first initialization power source line and a control terminal of the drive transistor,
a threshold control transistor connected between a drain region and the control terminal of the drive transistor,
a writing control transistor connected between a data signal line and a source region of the drive transistor,
a power supply transistor connected between a high power supply voltage line and the drain region of the drive transistor,
a light emission control transistor connected between the source region of the drive transistor and a first electrode of the light-emitting element,
a second initialization transistor connected between a second initialization power source line and the first electrode of the light-emitting element, and
a capacitor connected to the control terminal of the drive transistor and configured to hold a data signal in the data signal line.

16. The display device according to claim 15 ,
wherein the drive transistor is composed of the first transistor.

17. The display device according to claim 16 ,
wherein the lower metal lay

Assignees

• Sharp Kk

Inventors

• ITO Kazuatsu
• Mimura Hirohide
• Sano Masahito

Classifications

• H10D86/0212

  comprising manufacture, treatment or coating of substrates · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10D86/423 Primary

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title