Deposition of oxide thin films

Patent metadata

Field	Value
Publication number	US-12154785-B2
Application number	US-202217814161-A
Country	US
Kind code	B2
Filing date	Jul 21, 2022
Priority date	Nov 29, 2016
Publication date	Nov 26, 2024
Grant date	Nov 26, 2024

Abstract

Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

First claim

What is claimed is:

1. A reactor for selectively depositing a thin film on a substrate, the reactor comprising:
a deposition chamber;
a metal precursor source connected to the deposition chamber and configured to provide a first vapor phase precursor;
a sole molecular oxygen (O 2 ) source connected to the deposition chamber and configured to provide molecular oxygen (O 2 ) precursor; and
a control system configured to control the reactor to perform operations to selectively deposit the thin film on a first surface of the substrate relative to a second surface of the substrate while the substrate is positioned within the deposition chamber, wherein the thin film comprises an insulating metal oxide, and wherein the operations comprise:
supplying the first vapor phase precursor to the deposition chamber from the metal precursor source such that the first vapor phase precursor contacts the substrate;
after supplying the first vapor phase precursor, removing at least one of excess first vapor phase precursor or reaction byproducts from the substrate; and
after removing the at least one of excess first vapor phase precursor or the reaction byproducts, supplying the molecular oxygen (O 2 ) precursor to the deposition chamber from the sole molecular oxygen (O 2 ) source such that the molecular oxygen (O 2 ) precursor contacts the substrate.

2. The reactor of claim 1 , wherein the control system is further configured to maintain a deposition temperature of less than about 400° C. in the deposition chamber.

3. The reactor of claim 2 , wherein the control system is further configured to supply the molecular oxygen (O 2 ) precursor to minimize degradation of the second surface such that selective deposition from the first surface to the second surface is at least about 50% selective.

4. The reactor of claim 2 , wherein the control system is further configured to maintain the deposition temperature to be in a range from about 225° C. to about 400° C.

5. The reactor of claim 1 , wherein the control system, the metal precursor source, and the sole molecular oxygen (O 2 ) source are configured to deposit magnesium oxide as the insulating metal oxide.

6. The reactor of claim 1 , wherein the control system, the metal precursor source, and the sole molecular oxygen (O 2 ) source are configured to deposit lanthanum oxide or hafnium oxide as the insulating metal oxide.

7. The reactor of claim 1 , wherein the control system, the metal precursor source, and the sole molecular oxygen (O 2 ) source are configured to deposit a transition metal oxide as the insulating metal oxide.

8. The reactor of claim 1 , wherein the control system, the metal precursor source, and the sole molecular oxygen (O 2 ) source are configured to deposit aluminum oxide as the insulating metal oxide.

9. The reactor of claim 1 , wherein the control system is configured to control the reactor such that the molecular oxygen (O 2 ) precursor contacting the substrate does not degrade or oxidize the second surface, and wherein the second surface comprises an organic species.

10. The reactor of claim 1 , wherein the control system is configured to control the reactor such that the molecular oxygen (O 2 ) precursor contacting the substrate does not expose an underlying metal below the second surface, and wherein the second surface comprises an organic species.

11. The reactor of claim 1 , wherein the first vapor phase precursor comprises an organometallic compound.

12. The reactor of claim 11 , wherein the first vapor phase precursor comprises bis(cyclopentadienyl)magnesium (Mg(Cp) 2 ), lanthanum formamidinate (La(FAMD)3), or tetramethylethyl alkylamide hafnium (TEMAH).

13. The reactor of claim 1 , wherein the operations further comprise removing at least one of excess molecular oxygen (O 2 ) precursor or second reaction byproducts from the substrate after supplying the molecular oxygen (O 2 ) precursor.

14. The reactor of claim 1 , wherein the control system is configured to cause the reactor to cyclically repeat the operations to selectively deposit the thin film.

Assignees

• Asm Ip Holding Bv

Inventors

• Haukka Suvi P
• Färm Elina
• Matero Raija H
• Tois Eva E
• Suemori Hidemi
• Niskanen Antti Juhani
• Jung Sung-Hoon
• Räisänen Petri

Classifications

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6939

  characterised by the metal · CPC title