Microstrip-type microwave sensor

US12153000B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12153000-B2
Application numberUS-201917413857-A
CountryUS
Kind codeB2
Filing dateDec 11, 2019
Priority dateDec 14, 2018
Publication dateNov 26, 2024
Grant dateNov 26, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A microstrip-type microwave sensor for the measurement of the dielectric properties of a solid or liquid material, constituted by a main line and two connected transmission lines integral at one of their extremities to the main line, the main line and two connected transmission lines being spaced from one another by a slot and being made integral with a substrate. The main line is connected to an electrical circuit by each of its two extremities to inject a sinusoidal signal, and wherein said main line has a width giving it an impedance in the range 50 Ohm, the two connected transmission lines being of the same width and of a length equal to one quarter of the wavelength guided in the substrate, the substrate having a height or thickness giving it flexibility or rigidity, the substrate being applied to a metallic support formed of a layer of metallic material.

First claim

Opening claim text (preview).

The invention claimed is: 1. A microstrip microwave sensor for a measurement of dielectric properties of a solid or liquid material, the microwave sensor comprising: a substrate; a metallic support; a main line; at least two connected transmission lines integral at one of their extremities to the main line, the main line and the at least two connected transmission lines being spaced from one another by a slot and being made integral with the substrate, wherein: the at least two connected transmission lines extends over an upper conductive surface of the substrate such that a height of the slot is greater than zero and forms a reception means for the solid or liquid material, the slot has a width of less than twice a height of the substrate, the main line is connected to an electrical circuit by each of its two respective extremities to inject a sinusoidal signal, said main line has a width giving it an impedance in a range of 50 Ohm, the at least two connected transmission lines are substantially of a same width, the width being less than the height of the substrate, the at least two connected transmission lines are of a length equal to at least one quarter of a wavelength guided in the substrate, the substrate has the height or a thickness giving it flexibility or rigidity, and the substrate is applied to the metallic support formed of a layer of metallic material. 2. The microstrip microwave sensor according to claim 1 , wherein an assembly formed by the substrate, the main line and the at least two connected transmission lines is electrically insulated by means of an insulating coating formed of a thin layer of a polymer. 3. The microstrip microwave sensor according to claim 2 , wherein the insulating coating is formed of parylene with a thickness in a range of 1 to 40 μm. 4. The microstrip microwave sensor according to claim 1 , wherein the slot has a width in a range of 100 μm to 5 mm. 5. The microstrip microwave sensor according to claim 1 , wherein the metallic support has a thickness in a range of 35 μm. 6. The microstrip microwave sensor according to claim 1 , wherein the height of the substrate is of between 500 and 1500 μm. 7. The microstrip microwave sensor according to claim 1 , wherein the substrate has a permittivity of between 1 and 40. 8. The microstrip microwave sensor according to claim 1 , wherein the slot delimited by the at least two connected transmission lines forms the reception means for said solid or liquid material. 9. The microstrip microwave sensor according to claim 1 , wherein the height of the substrate is of between 500 and 1500 μm. 10. The microstrip microwave sensor according to claim 1 , wherein the at least two connected transmission lines is two connected transmission lines. 11. The microstrip microwave sensor according to claim 10 , wherein the two connected transmission lines are substantially of a same length of between 500 μm and 50 cm.

Assignees

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Classifications

  • Precious stones; Pearls · CPC title

  • Sensors; antennas; probes; detectors (wave guide measuring sections G01R1/24) · CPC title

  • Glass · CPC title

  • G01N22/00Primary

    Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more (G01N3/00 - G01N17/00, G01N24/00 take precedence) · CPC title

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What does patent US12153000B2 cover?
A microstrip-type microwave sensor for the measurement of the dielectric properties of a solid or liquid material, constituted by a main line and two connected transmission lines integral at one of their extremities to the main line, the main line and two connected transmission lines being spaced from one another by a slot and being made integral with a substrate. The main line is connected to …
Who is the assignee on this patent?
Univ Paris Saclay, Centre Nat Rech Scient, Univ Lille, and 3 more
What technology area does this patent fall under?
Primary CPC classification G01N22/00. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 26 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).