Acoustic wave device, wafer, and method of manufacturing wafer

US12149228B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12149228-B2
Application numberUS-202217991259-A
CountryUS
Kind codeB2
Filing dateNov 21, 2022
Priority dateDec 27, 2021
Publication dateNov 19, 2024
Grant dateNov 19, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, and an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate.

First claim

Opening claim text (preview).

What is claimed is: 1. An acoustic wave device comprising: a support substrate; a piezoelectric layer provided on the support substrate; at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers; and an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate. 2. The acoustic wave device according to claim 1 , wherein the plurality of void regions of which the extending directions different from each other are connected to each other to form one void region. 3. The acoustic wave device according to claim 2 , wherein the one void region has a shape in which a void region extends in a plurality of directions from one point when viewed from the thickness direction of the support substrate. 4. The acoustic wave device according to claim 2 , wherein the one void region has a shape provided so as to surround a part of the insulating layer when viewed from the thickness direction of the support substrate. 5. The acoustic wave device according to claim 1 , wherein an area of the plurality of void regions in a cross-sectional view is equal to or greater than 1% of an area of the insulating layer including the plurality of void regions. 6. The acoustic wave device according to claim 1 , wherein an interface between the support substrate and the insulating layer is an uneven surface. 7. The acoustic wave device according to claim 6 , wherein the plurality of void regions overlap a recess portion of the uneven surface. 8. The acoustic wave device according to claim 1 , wherein in a cross-sectional shape of each of the plurality of void regions, a width at a side of the piezoelectric layer is narrower than a width at a side of the support substrate. 9. The acoustic wave device according to claim 1 , wherein a distance between each of the plurality of void regions and the piezoelectric layer is equal to or greater than an average pitch of the plurality of electrode fingers. 10. The acoustic wave device according to claim 1 , wherein the insulating layer includes a first insulating layer and a second insulating layer, the first insulating layer is provided on the support substrate, has the plurality of void regions, and is penetrated by the plurality of void regions, and the second insulating layer is provided on the first insulating layer and has no void region. 11. The acoustic wave device according to claim 10 , further comprising a third insulating layer provided on the second insulating layer, the third insulating layer having an acoustic velocity lower than those of the first insulating layer and the second insulating layer. 12. A wafer comprising: a support substrate; a piezoelectric layer provided on the support substrate; an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the plurality of void regions being longer than a width in a direction orthogonal to the corresponding extending direction. 13. A method of manufacturing a wafer, the method comprising: forming, on a support substrate having an uneven surface, an insulating layer having a plurality of first void regions that are in contact with a recess portion of the uneven surface; forming a plurality of second void regions in the insulating layer by etching parts in contact with the plurality of first void regions of the insulating layer, extending directions of the plurality of second void regions being different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the plurality of second void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate; and forming a piezoelectric layer on the insulating layer.

Assignees

Inventors

Classifications

  • by fusion of metals or by adhesives · CPC title

  • Ladder SAW filters · CPC title

  • Multilayer finger or busbar electrode · CPC title

  • Duplexers · CPC title

  • of lithium niobate or lithium-tantalate substrates · CPC title

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Frequently asked questions

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What does patent US12149228B2 cover?
An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, and an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at l…
Who is the assignee on this patent?
Taiyo Yuden Kk
What technology area does this patent fall under?
Primary CPC classification H03H9/25. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 19 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).