Display device including two kinds of semiconductor layers

Patent metadata

Field	Value
Publication number	US-12148763-B2
Application number	US-202318136756-A
Country	US
Kind code	B2
Filing date	Apr 19, 2023
Priority date	Feb 27, 2020
Publication date	Nov 19, 2024
Grant date	Nov 19, 2024

Abstract

A display device includes a first region and a second region each including a plurality of pixels, and a plurality of wires connected to the plurality of pixels, respectively, to transmit a signal, where the number of pixels per unit area in the second region is less than the number of pixels per unit area in the first region, and the number of wires per unit area in the second region is less than the number of wires per unit area in the first region.

First claim

What is claimed is:

1. A display device, comprising:
a substrate;
a polycrystalline semiconductor layer on the substrate, the polycrystalline semiconductor layer including a channel, a first electrode, and a second electrode of a first transistor and a channel, a first electrode, and a second electrode of a second transistor;
a first gate conductor layer including a gate electrode of the first transistor overlapping the channel of the first transistor, and a gate electrode of the second transistor overlapping the channel of the second transistor;
an oxide semiconductor layer on the substrate, the oxide semiconductor layer including a channel, a first electrode, and a second electrode of a third transistor;
a second gate conductor layer including a lower gate electrode of the third transistor overlapping the channel of the third transistor;
a third gate conductor layer including an upper gate electrode of the third transistor overlapping the channel of the third transistor; and
a first data conductor layer including a first initialization voltage supply line electrically connected to the second transistor, and a first connection electrode electrically connected to the second electrode of the third transistor and the gate electrode of the first transistor,
wherein the first initialization voltage supply line is disposed on the same layer as the first connection electrode.

2. The display device of claim 1 , further comprising:
a second initialization voltage supply line: and
a fourth transistor connected between the second initialization voltage supply line and the third transistor.

3. The display device of claim 2 , wherein
the oxide semiconductor layer further includes a channel, a first electrode, and a second electrode of the fourth transistor,
the second gate conductor layer further includes a lower gate electrode of the fourth transistor overlapping the channel of the fourth transistor,
the third gate conductor layer further includes an upper gate electrode of the fourth transistor overlapping the channel of the fourth transistor, and
wherein the second initialization voltage supply line is disposed on the same layer as the first initialization voltage supply line.

4. The display device of claim 2 , further comprising:
a light emitting diode connected between a driving voltage line and a common voltage line;
a fifth transistor connected between the first electrode of the first transistor and a data line, the first electrode of the first transistor being connected to the driving voltage line; and
a storage capacitor connected between the driving voltage line and the gate electrode of the first transistor.

5. The display device of claim 4 , wherein
the polycrystalline semiconductor layer further includes a channel, a first electrode, and a second electrode of the fifth transistor, and
the first gate conductor layer further includes a gate electrode of the fifth transistor.

6. The display device of claim 5 , wherein the first electrode of the first transistor is extended to the second electrode of the fifth transistor.

7. The display device of claim 5 , wherein
the second gate conductor further includes a first storage electrode of the storage capacitor, and
the first storage electrode overlaps the gate electrode of the first transistor.

8. The display device of claim 4 , further comprising:
a sixth transistor connected between the driving voltage line and the first electrode of the first transistor; and
a seventh transistor connected between the second electrode of the first transistor and the light emitting diode.

9. The display device of claim 8 , wherein
the polycrystalline semiconductor layer further includes a channel, a first electrode, and a second electrode of the sixth transistor, and
the first gate conductor layer further includes a gate electrode of the sixth transistor.

10. The display device of claim 9 , wherein
the first electrode of the sixth transistor is connected to the driving voltage line, and
the second electrode of the sixth transistor is extended to the first electrode of the first transistor.

11. The display device of claim 9 , wherein
the polycrystalline semiconductor layer further includes a channel, a first electrode, and a second electrode of the seventh transistor, and
the first gate conductor layer further includes a gate electrode of the seventh transistor.

12. The display device of claim 11 , wherein
the first electrode of the seventh transistor is extended to the second electrode of the first transistor, and
the second electrode of the seventh transistor is connected to an anode of the light emitting diode.

13. The display device of claim 1 , further comprising:
a light blocking member disposed on the substrate,
wherein the light blocking member is disposed between the substrate and the gate electrode of the first transistor.

14. A display device, comprising:
a substrate;
a polycrystalline semiconductor layer on the substrate, the polycrystalline semiconductor layer including a channel, a first electrode, and a second electrode of a first transistor, and a channel, a first electrode, and a second electrode of a second transistor;
a first gate conductor layer including a gate electrode of the first transistor overlapping the channel of the first transistor, and a gate electrode of the second transistor overlapping the channel of the second transistor;
an oxide semiconductor layer on the substrate, the oxide semiconductor layer including a channel, a first electrode, and a second electrode of a third transistor, and a channel, a first electrode, and a second electrode of a fourth transistor;
a second gate conductor layer including a lower gate electrode of the third transistor overlapping the channel of the third transistor, a lower gate electrode of the fourth transistor overlapping the channel of the fourth transistor, and a first initialization voltage line electrically connected to the fourth transistor;
a third gate conductor layer including an upper gate electrode of the third transistor overlapping the channel of the third transistor, and an upper electrode of the fourth transistor overlapping the channel of the fourth transistor; and
a first data conductor layer including a second initialization voltage supply line electrically connected to the second transistor, and a first connection electrode electrically connected to the second electrode of the third transistor and the gate electrode of the first transistor,
wherein the first initialization voltage line is disposed on the same layer as the lower gate electrode of the fourth transistor, and
the second initialization voltage supply line is disposed on the same layer as the first connection electrode.

15. The display device of claim 14 , further comprising:
a light emitting diode connected between a driving voltage line and a common voltage line;
a fifth transistor connected between the first electrode of the first transistor and a data line, the first electrode of the first transistor being connected to the driving voltage line; and
a storage capacitor connected between the driving voltage line and the gate electrode of the first transistor.

16. The display device of claim 15 , wherein
the polycrystalline semiconductor layer further includes a channel, a first electrode, and a second electrode of the fifth transistor, and
the first gate conductor layer further includes a gate electrode of the fifth transistor.

17. The display device of claim 16 , wherein the first electrode of the first transistor is extende

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Dong-Hwi
• Jeon Jin

Classifications

• H10K59/353

  characterised by the geometrical arrangement of the RGB subpixels · CPC title

• H10K59/1315

  comprising structures specially adapted for lowering the resistance · CPC title

• G09F9/372

  the positions of the elements being controlled by the application of an electric field · CPC title

• G09F9/335

  being organic light emitting diodes [OLED] · CPC title

• G09G2340/0407

  Resolution change, inclusive of the use of different resolutions for different screen areas · CPC title