Semiconductor Device and Method of Manufacture
US-2017316981-A1 · Nov 2, 2017 · US
Plasma processing apparatus and method for releasing sample
US12148633B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12148633-B2 |
| Application number | US-202017038072-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2020 |
| Priority date | Aug 3, 2016 |
| Publication date | Nov 19, 2024 |
| Grant date | Nov 19, 2024 |
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- Title
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- Abstract
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- Assignees and inventors
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- First independent claim
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- CPC / IPC classifications
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Abstract
Official abstract text for this publication.
The invention provides a plasma processing apparatus which includes a processing chamber, a radio frequency power source to supply a radio frequency power for plasma generation, a sample stage equipped with an electrostatic chuck electrode of a sample, a DC power source to apply a DC voltage to the electrode, and a control unit to change the DC voltage from a predetermined value to almost 0 V when a predetermined time elapses since the supplying of the radio frequency power is stopped. The predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V. The predetermined time is a time defined on the basis of a time when charged particles generated by the plasma processing disappear or a time when an afterglow discharge disappears.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for releasing a sample from a sample stage, in which the sample electrostatically adsorbed to the sample stage is subjected to a plasma processing and then released from the sample stage after the plasma processing, comprising: generating a neutralization plasma; changing a DC voltage applied to an electrode for the neutralization plasma from a predetermined value to 0 V after supplying of a radio frequency power to generate plasma is stopped and a predetermined time elapses, wherein the predetermined time is 0.1 to 3 seconds, and wherein the predetermined value is −10 to −20 V, wherein the number of electrodes is two and a second electrode of the two electrodes is disposed concentrically with respect to a first electrode of the two electrodes, and wherein the method further comprises applying the DC voltage to each of the two electrodes such that an average value of a DC voltage applied to the first electrode and a DC voltage applied to the second electrode becomes the predetermined value.
Assignees
Inventors
Classifications
Details of electrostatic chucks · CPC title
- H10P72/0421Primary
for drying etching · CPC title
Etching · CPC title
Electrodes · CPC title
- H01J37/32082Primary
Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title
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Frequently asked questions
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- What does patent US12148633B2 cover?
- The invention provides a plasma processing apparatus which includes a processing chamber, a radio frequency power source to supply a radio frequency power for plasma generation, a sample stage equipped with an electrostatic chuck electrode of a sample, a DC power source to apply a DC voltage to the electrode, and a control unit to change the DC voltage from a predetermined value to almost 0 V w…
- Who is the assignee on this patent?
- Hitachi High Tech Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P72/0421. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 19 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).