Internal-ion gated electrochemical transistors

Patent metadata

Field	Value
Publication number	US-12144191-B2
Application number	US-202117352622-A
Country	US
Kind code	B2
Filing date	Jun 21, 2021
Priority date	Dec 21, 2018
Publication date	Nov 12, 2024
Grant date	Nov 12, 2024

Abstract

An internal-ion gated electrochemical transistor is provided. In some embodiments, the internal-ion gated electrochemical transistor comprises: a gate electrode, a source electrode, and a drain electrode; a channel formed between the source electrode and the drain electrode, wherein the channel comprises a conducting polymer, wherein the channel serves as a reservoir of positively charged mobile ions; and an ion membrane between the channel and the gate electrode, wherein: in an off state, at least a subset of the positively charged mobile ions are ionically bonded to negatively charged ions of the conducting polymer, and wherein in an on state, at least a subset of the positively charged mobile ions are unbonded from the negatively charged ions of the conducting polymer to induce a current within the channel, and wherein at least one of the off state and the on state is actuated by application of a voltage to the gate electrode.

First claim

What is claimed is:

1. An internal-ion gated electrochemical transistor, comprising:
a gate electrode, a source electrode, and a drain electrode;
a channel formed between the source electrode and the drain electrode, wherein the channel comprises a material that includes a conducting polymer and a biocompatible solution, wherein the channel serves as a reservoir of positively charged mobile ions; and
an ion membrane between the channel and the gate electrode, wherein:
in an off state of the internal-ion gated electrochemical transistor, at least a subset of the positively charged mobile ions are ionically bonded to negatively charged ions of the conducting polymer, and wherein in an on state of the internal-ion gated electrochemical transistor, at least a subset of the positively charged mobile ions are unbonded from the negatively charged ions of the conducting polymer to induce a current within the channel, and wherein at least one of the off state and the on state of the internal-ion gated electrochemical transistor is actuated by application of a voltage to the gate electrode.

2. The internal-ion gated electrochemical transistor of claim 1 , wherein the on state of the internal-ion gated electrochemical transistor is a state of the internal-ion gated electrochemical transistor when no voltage is applied to the gate electrode.

3. The internal-ion gated electrochemical transistor of claim 1 , wherein the off state of the internal-ion gated electrochemical transistor is a state of the internal-ion gated electrochemical transistor when no voltage is applied to the gate electrode.

4. The internal-ion gated electrochemical transistor of claim 1 , wherein the conducting polymer is comprised of PEDOT:PSS.

5. The internal-ion gated electrochemical transistor of claim 4 , wherein the conducting polymer is further comprised of polyethylenimine (PEI).

6. The internal-ion gated electrochemical transistor of claim 1 , wherein the biocompatible solution is comprised of D-sorbitol.

7. The internal-ion gated electrochemical transistor of claim 1 , wherein the ion membrane is comprised of chitosan.

8. The internal-ion gated electrochemical transistor of claim 1 , wherein a transconductance of the internal-ion gated electrochemical transistor is based on a volume of the channel.

9. The internal-ion gated electrochemical transistor of claim 1 , wherein the gate electrode, the source electrode, and the drain electrode are patterned on a conformable substrate.

10. The internal-ion gated electrochemical transistor of claim 9 , wherein the conformable substrate comprises parylene.

Assignees

• Univ Columbia
• The Trustees Of Columbia Univ In The City New York

Inventors

• Khodagholy Dion
• Spyropoulos Georgios

Classifications

• H10K77/111

  Flexible substrates · CPC title

• G01N27/414

  Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS · CPC title

• G01N27/00

  Investigating or analysing materials by the use of electric, electrochemical, or magnetic means (G01N3/00 – G01N25/00 take precedence; measurement or testing of electric or magnetic variables or of electric or magnetic properties of materials G01R) · CPC title

• H10K10/46 Primary

  Field-effect transistors, e.g. organic thin-film transistors [OTFT] (H10K10/43 takes precedence) · CPC title

• G01N27/4145 Primary

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title