Sensor and method for producing a sensor

Patent metadata

Field	Value
Publication number	US-12140488-B2
Application number	US-202117635929-A
Country	US
Kind code	B2
Filing date	Jan 21, 2021
Priority date	Feb 27, 2020
Publication date	Nov 12, 2024
Grant date	Nov 12, 2024

Abstract

A sensor including a deformation body having a membrane for deformation when subjected to pressure from a medium. The sensor further includes a strain element applied to and attached to the membrane. The strain element is based on SOI technology and has multiple piezoresistive resistors.

First claim

The invention claimed is:

1. A sensor comprising:
a deformation body having a membrane for deformation when subjected to pressure from a medium; and
a strain element applied to the membrane and fixed to the membrane, wherein
the strain element is based on SOI technology and comprises a plurality of piezoresistive resistors, each piezoresistive resistor comprising a spatially exposed Si nanowire.

2. The sensor according to claim 1 , wherein:
a connecting means is arranged between the membrane and the strain element, and
the strain element is fixed to the membrane via the connecting means.

3. The sensor according to claim 2 ,
wherein the Young's modulus of the connecting means is at least as great as that of the membrane.

4. The sensor according to claim 2 ,
wherein the connecting means comprises a glass solder or a metal solder or an inorganic adhesive or an organic adhesive.

5. The sensor according to claim 1 ,
wherein the strain element covers a major part of the membrane.

6. The sensor according to claim 1 ,
wherein the strain element is connected to the membrane over a major portion of a lateral extent of the strain element.

7. The sensor according to claim 1 ,
wherein the strain element has a maximum thickness of at most 200 μm.

8. The sensor according to claim 1 ,
wherein the deformation body comprises or consists of one or more of the following materials:
glass, sapphire, silicon, steel, ceramic.

9. The sensor according to claim 1 ,
wherein the piezoresistive resistors are arranged in an edge region of the membrane.

10. A method of manufacturing a sensor, comprising the steps:
A) providing a deformation body with a membrane for deformation when subjected to pressure from a medium,
B) providing a strain element, wherein the strain element is based on SOI technology and comprises a plurality of piezoresistive resistors,
C) applying and fixing the strain element to the membrane.

11. The method according to claim 10 ,
wherein the strain element is attached to the membrane via a direct bonding process.

12. The method according to claim 10 ,
wherein the strain element is attached to the membrane via a connecting means.

13. A sensor comprising:
a deformation body having a membrane for deformation when subjected to pressure from a medium; and
a strain element applied to the membrane and fixed to the membrane, wherein
the strain element is based on SOI technology and comprises a plurality of piezoresistive resistors,
a connecting means is arranged between the membrane and the strain element, and
the strain element is fixed to the membrane via the connecting means.

14. The sensor according to claim 13 ,
wherein the Young's modulus of the connecting means is at least as great as that of the membrane.

15. The sensor according to claim 13 ,
wherein the connecting means comprises a glass solder or a metal solder or an inorganic adhesive or an organic adhesive.

16. The sensor according to claim 13 ,
wherein the strain element has a maximum thickness of at most 200 μm.

17. The sensor according to claim 13 ,
wherein the deformation body comprises or consists of one or more of the following materials:
glass, sapphire, silicon, steel, ceramic.

18. The sensor according to claim 13 ,
wherein the strain element covers a major part of the membrane.

19. The sensor according to claim 13 ,
wherein the piezoresistive resistors are arranged in an edge region of the membrane.

Assignees

• Tdk Electronics Ag

Inventors

• Milke Bettina
• Peschka Andreas

Classifications

• G01L9/06

  of piezo-resistive devices · CPC title

• G01L7/082 Primary

  construction or mounting of diaphragms (of semiconductive diaphragms G01L9/0042) · CPC title

• G01L9/0055 Primary

  bonded on a diaphragm · CPC title

• G01L9/0054 Primary

  integral with a semiconducting diaphragm · CPC title