Stacked die assembly

Patent metadata

Field	Value
Publication number	US-12137618-B2
Application number	US-202318351797-A
Country	US
Kind code	B2
Filing date	Jul 13, 2023
Priority date	Oct 11, 2019
Publication date	Nov 5, 2024
Grant date	Nov 5, 2024

Abstract

A sensor device comprising: a lead frame; a first/second semiconductor die having a first/second sensor structure at a first/second sensor location, and a plurality of first/second bond pads electrically connected to the lead frame; the semiconductor dies having a square or rectangular shape with a geometric center; the sensor locations are offset from the geometrical centers; the second die is stacked on top of the first die, and is rotated by a non-zero angle and optionally also offset or shifted with respect to the first die, such that a perpendicular projection of the first and second sensor location coincide.

First claim

The invention claimed is:

1. A sensor device comprising:
a lead frame;
a first semiconductor die having a first rectangular shape with a first geometrical center, and being electrically connected to the lead frame, and comprising a first sensor structure situated at a first sensor location;
a second semiconductor die having a second rectangular shape, and having a second geometrical center, and being electrically connected to the lead frame, and comprising a second sensor structure situated at a second sensor location;
wherein:
the first rectangular shape has a length defining a length direction, and a width defining a width direction perpendicular to the length direction, said length being equal to or larger than said width;
the first sensor location is offset from the first geometrical center by a first predetermined offset along the length direction, and/or by a second predetermined offset in the width direction;
at least one of the first and second predetermined offset is different from zero;
an orthogonal projection of the first and the second sensor location onto the lead frame coincide; and
the second semiconductor die is stacked with the first semiconductor die, and is rotated by 90° or by 180° with respect to the first semiconductor die about an imaginary axis perpendicular to the lead frame; and
wherein the first semiconductor die is implemented in a first CMOS technology node and the second semiconductor die is implemented in a second CMOS technology node different from the first CMOS technology node.

2. The sensor device according to claim 1 , wherein one of the first and second predetermined offset is equal to zero, and the other of the first and second predetermined offset is different from zero.

3. The sensor device according to claim 1 , wherein each of the first and second predetermined offset is different from zero.

4. The sensor device according to claim 1 , wherein the first semiconductor die and the second semiconductor die overlap by at least 60%.

5. The sensor device according to claim 1 , wherein the first semiconductor die comprises a plurality of first bond pads wire-bonded to the lead frame; and
wherein the second semiconductor die comprises a plurality of second bond pads wire-bonded to the lead frame; and
wherein the first wire bonds and the second wire bonds are situated on a same side of the lead frame.

6. A sensor device comprising:
a lead frame;
a first semiconductor die having a first rectangular shape with a first geometrical center, and being electrically connected to the lead frame, and comprising a first sensor structure situated at a first sensor location;
a second semiconductor die having a second rectangular shape, and having a second geometrical center, and being electrically connected to the lead frame, and comprising a second sensor structure situated at a second sensor location;
wherein:
the first rectangular shape has a length defining a length direction, and a width defining a width direction perpendicular to the length direction, said length being equal to or larger than said width;
the first sensor location is offset from the first geometrical center by a first predetermined offset along the length direction, and/or by a second predetermined offset in the width direction;
at least one of the first and second predetermined offset is different from zero;
an orthogonal projection of the first and the second sensor location onto the lead frame coincide; and
the second semiconductor die is stacked with the first semiconductor die, and is rotated by 90° or by 180° with respect to the first semiconductor die about an imaginary axis perpendicular to the lead frame; and
wherein the first semiconductor die and the second semiconductor die are galvanically separated.

7. The sensor device according to claim 6 , wherein one of the first and second predetermined offset is equal to zero, and the other of the first and second predetermined offset is different from zero.

8. The sensor device according to claim 6 , wherein each of the first and second predetermined offset is different from zero.

9. The sensor device according to claim 6 , wherein the first semiconductor die and the second semiconductor die overlap by at least 60%.

10. The sensor device according to claim 6 , wherein the first semiconductor die comprises a plurality of first bond pads wire-bonded to the lead frame; and
wherein the second semiconductor die comprises a plurality of second bond pads wire-bonded to the lead frame; and
wherein the first wire bonds and the second wire bonds are situated on a same side of the lead frame.

11. A sensor device comprising:
a lead frame;
a first semiconductor die having a first rectangular shape with a first geometrical center, and being electrically connected to the lead frame, and comprising a first sensor structure situated at a first sensor location;
a second semiconductor die having a second rectangular shape, and having a second geometrical center, and being electrically connected to the lead frame, and comprising a second sensor structure situated at a second sensor location;
wherein:
the first rectangular shape has a length defining a length direction, and a width defining a width direction perpendicular to the length direction, said length being equal to or larger than said width;
the first sensor location is offset from the first geometrical center by a first predetermined offset along the length direction, and/or by a second predetermined offset in the width direction;
at least one of the first and second predetermined offset is different from zero;
an orthogonal projection of the first and the second sensor location onto the lead frame coincide; and
the second semiconductor die is stacked with the first semiconductor die, and is rotated by 90° or by 180° with respect to the first semiconductor die about an imaginary axis perpendicular to the lead frame; and
wherein the second rectangular shape is equal to the first rectangular shape.

12. The sensor device according to claim 11 , wherein one of the first and second predetermined offset is equal to zero, and the other of the first and second predetermined offset is different from zero.

13. The sensor device according to claim 11 , wherein each of the first and second predetermined offset is different from zero.

14. The sensor device according to claim 11 , wherein the first semiconductor die and the second semiconductor die overlap by at least 60%.

15. The sensor device according to claim 11 , wherein the first semiconductor die comprises a plurality of first bond pads wire-bonded to the lead frame; and
wherein the second semiconductor die comprises a plurality of second bond pads wire-bonded to the lead frame; and
wherein the first wire bonds and the second wire bonds are situated on a same side of the lead frame.

16. A sensor device comprising:
a lead frame;
a first semiconductor die having a first rectangular shape with a first geometrical center, and being electrically connected to the lead frame, and comprising a first sensor structure situated at a first sensor location;
a second semiconductor die having a second rectangular shape, and having a second geometrical center, and being electrically connected to the lead frame, and comprising a second sensor structure situated at a second sensor location;
wherein:
the first rectangular shape has a length defining a length direction, and a width defining a width direction perpendicular to the length direction, said length being equal to or larger than said width;
the first sensor location is offset

Assignees

• Melexis Tech Sa

Inventors

• Laville Arnaud
• Lahaye Eric
• Chen Jian

Classifications

• H10W90/811 Primary

  Multiple chips on leadframes · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W70/421

  Shapes or dispositions · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title