Electromagnetic and thermal shields with low-dimensional materials

Patent metadata

Field	Value
Publication number	US-12137546-B2
Application number	US-202117455280-A
Country	US
Kind code	B2
Filing date	Nov 17, 2021
Priority date	Nov 17, 2020
Publication date	Nov 5, 2024
Grant date	Nov 5, 2024

Abstract

An electromagnetic interface (EMI) shielding material and method for producing the electromagnetic interface (EMI) shielding material. The EMI shielding material including a polymer matrix and a van der Waals material embedded in the polymer matrix and forming quasi-one-dimensional atomic threads, and wherein the van der Waals material is a trichalcogenide compound.

First claim

What is claimed is:

1. A composite material with an electromagnetic interface (EMI) shielding material for frequencies of 1 MHz and greater and less than 1 THz, the composite material comprising:
a polymer matrix and a van der Waals material embedded in the polymer matrix, the van der Waals material forming quasi-one-dimensional atomic threads, and the van der Waals material being a trichalcogenide compound;
two-dimensional graphene embedded in the polymer matrix and mixed with the van der Waals material; and
wherein the polymer matrix includes an epoxy resin and the two-dimensional graphene embedded in the polymer matrix and mixed with the van der Waals material, and wherein the van der Waals material has a loading fraction of 1.0 vol. % to 50 vol. % of the composite material.

2. The composite material of claim 1 , wherein the two-dimensional graphene is few-layer graphene filler having a thickness of 0.35 nm to 20 nm.

3. The composite material of claim 1 wherein the two-dimensional graphene is a graphene filler having two or more different thicknesses of 0.35 nm to 20 nm, and lateral dimensions of 100 nm to 50 μm.

4. The composite material of claim 1 , wherein the van der Waals material includes one or more of TaSe 3 , ZrTe 3 , and transition metal trichalcogenides materials with quasi-1D crystal structure.

5. The composite material of claim 4 , wherein the TaSe 3 is monoclinic TaSe 3 .

6. The composite material of claim 4 , wherein the quasi-one-dimensional atomic threads have a length of 1 μm to 10 mm and a diameter of 1 nm to 10 nm in an exfoliated form.

7. The composite material of claim 4 , wherein the quasi-one-dimensional atomic threads have a length of 100 μm to 500 μm and a diameter of 50 nm to 100 nm in an exfoliated state.

8. The composite material of claim 1 , wherein the trichalcogenide compound is selected from one or more transition metal trichalcogenides and alloys of the transition metal trichalcogenides.

9. The composite material of claim 8 , wherein the transition metal trichalcogenides having a chemical formula of MX 3 , where M=V, Nb, Ta, or other transition metals, and X is S, Se, or Te.

10. The composite material of claim 1 , wherein the polymer matrix includes an epoxy resin, a UV-cured polymer, or sodium alginate.

11. The composite material of claim 1 , comprising:
two or more layers of EMI shielding materials, the two or more layers of EMI shielding material including a first layer for EMI shielding and a second layer for heat removal.

12. The composite material of claim 1 , wherein the loading fraction of van der Waals material is 2.5 vol. % to 19.5 vol. % of the composite material.

13. The composite material of claim 12 , further comprising:
a hardener added to the epoxy resin.

14. The composite material of claim 1 , wherein
the polymer matrix includes an epoxy resin, a polymer configured to be cured from ultraviolet irradiation or sodium alginate; and
the van der Waals material embedded in the polymer matrix is TaSe 3 .

15. The composite material of claim 14 , wherein the TaSe 3 has a loading fraction of less than 3 vol. % of the composite material.

16. The composite material of claim 14 , wherein the TaSe 3 has a loading fraction of 1.14 vol. % to 2.8 vol. % of the composite material.

17. An electronic device including the composite material of claim 1 .

18. A method of producing a composite material with an electromagnetic interface (EMI) shielding material comprising:
embedding a van der Waals material in a polymer matrix, the van der Waals material being quasi-one-dimensional atomic threads, and wherein the polymer matrix includes an epoxy resin, a polymer configured to be cured from ultraviolet irradiation or sodium alginate, and the van der Waals material embedded in the polymer matrix is TaSe 3 , and wherein the TaSe 3 has a loading fraction of less than 3 vol. % of the composite material.

19. The method according to claim 18 , further comprising:
embedding two-dimensional graphene in the polymer matrix and mixed with the van der Waals material.

Assignees

• Univ California

Inventors

• Balandin Alexander A
• Kargar Fariborz

Classifications

• B32B27/38

  comprising epoxy resins · CPC title

• B32B2307/212

  Electromagnetic interference shielding · CPC title

• C08K2201/003

  Additives being defined by their diameter · CPC title

• C08K2201/004

  Additives being defined by their length · CPC title

• C08K2201/011

  Nanostructured additives · CPC title