Microelectromechanical system with piezoelectric film and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-12133467-B2
Application number	US-202217876393-A
Country	US
Kind code	B2
Filing date	Jul 28, 2022
Priority date	Jun 28, 2019
Publication date	Oct 29, 2024
Grant date	Oct 29, 2024

Abstract

A method for forming a MEMS device is provided. The method includes forming a stack of layers on a base piezoelectric layer. The stack of layers includes a base metal film over the base piezoelectric layer; a first piezoelectric film over the base metal film; and a first metal film having an opening therein over the first piezoelectric film. The method also includes forming a trench in the stack of layers, wherein the trench passes through the opening in the first metal film but does not expose the base metal film; after forming the trench, forming a spacer structure under the first metal film but spaced apart from the base metal film; after forming the spacer structure, deepening the trench to expose the base metal film; and forming a contact in the trench.

First claim

What is claimed is:

1. A method for forming a microelectromechanical systems (MEMS) device, comprising:
forming a stack of layers on a base piezoelectric layer, wherein the stack of layers comprises:
a base metal film over the base piezoelectric layer;
a first piezoelectric film over the base metal film; and
a first metal film having an opening therein over the first piezoelectric film;

forming a trench in the stack of layers, wherein the trench passes through the opening in the first metal film but does not expose the base metal film;
after forming the trench, forming a spacer structure under the first metal film but spaced apart from the base metal film;
after forming the spacer structure, deepening the trench to expose the base metal film; and
forming a contact in the trench.

2. The method of claim 1 , wherein forming the contact in the trench is such that the contact is in contact with the spacer structure and the base metal film.

3. The method of claim 1 , wherein forming the spacer structure is such that a bottom surface of the spacer structure is higher than a bottom of the trench.

4. The method of claim 1 , wherein forming the spacer structure is such that the spacer structure is in contact with a bottom surface of the first metal film.

5. The method of claim 1 , wherein the first metal film comprises molybdenum (Mo).

6. The method of claim 1 , wherein the first piezoelectric film comprises aluminum nitride (AlN).

7. The method of claim 1 , wherein the spacer structure comprises oxide.

8. A method for forming a microelectromechanical systems (MEMS) device, comprising:
forming a base metal film over a base piezoelectric film;
forming a first piezoelectric film over the base metal film;
performing a plasma process to the first piezoelectric film to form an amorphous structure in a top portion of the first piezoelectric film while a bottom portion of the first piezoelectric film has a crystal structure;
forming a first metal film over the amorphous structure of the first piezoelectric film;
forming a trench passing through the first metal film and the top portion of the first piezoelectric film;
performing an etching process to etch the amorphous structure of the first piezoelectric film at an etching rate faster than etch the crystal structure of the first piezoelectric film such that a void is formed in the amorphous structure; and
forming a contact in the trench.

9. The method of claim 8 , further comprising forming a spacer structure in the void prior to forming the contact in the trench.

10. The method of claim 9 , wherein the spacer structure is spaced apart from the base metal film.

11. The method of claim 9 , wherein forming the contact in the trench is such that the contact covers the spacer structure.

12. The method of claim 8 , wherein the plasma process is an Ar plasma treatment.

13. The method of claim 8 , wherein forming the trench is performed by using a dry etching process with Cl 2 gas or SF 6 gas.

14. The method of claim 8 , wherein the etching process is a wet etching process by using H 3 PO 4 solution.

15. A microelectromechanical systems (MEMS) device, comprising:
a substrate layer having an opening therein; and
a flexible layer over the substrate layer and covering the opening, wherein the flexible layer comprises:
a base layer;
a plurality of piezoelectric films over the base layer, wherein the plurality of the piezoelectric films comprise a first piezoelectric film comprising a top portion and a bottom portion;
a plurality of metal films interleaved with the piezoelectric films, wherein the metal films comprise a first metal film over the first piezoelectric film;
a spacer structure directly between the first metal film and the bottom portion of the first piezoelectric film; and
a contact in contact with the first metal film, the spacer structure, and the bottom portion of the first piezoelectric film.

16. The MEMS device of claim 15 , wherein the spacer structure is in contact with a bottom surface of the first metal film.

17. The MEMS device of claim 15 , wherein a length of the spacer structure is in a range from about 500 angstroms to about 2000 angstroms.

18. The MEMS device of claim 15 , wherein the top portion of the first piezoelectric film is amorphous.

19. The MEMS device of claim 15 , wherein the bottom portion of the first piezoelectric film is in crystal structure.

20. The MEMS device of claim 15 , wherein a distal portion of the first metal film is bent downward.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Ting-Jung

Classifications

• H10N30/872

  Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices · CPC title

• H10N30/50

  having a stacked or multilayer structure · CPC title

• H10N30/09

  Forming piezoelectric or electrostrictive materials · CPC title

• H10N30/308

  Membrane type · CPC title

• H10N30/874

  embedded within piezoelectric or electrostrictive material, e.g. via connections · CPC title