Electrode for source/drain of organic semiconductor device, organic semiconductor device using same, and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-12133397-B2
Application number	US-202017753409-A
Country	US
Kind code	B2
Filing date	Jun 18, 2020
Priority date	Sep 3, 2019
Publication date	Oct 29, 2024
Grant date	Oct 29, 2024

Abstract

The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.

First claim

The invention claimed is:

1. Electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes,
wherein a channel length between the electrodes in each set is 200 μm or less,
the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less, and
the parallelism of the channel length between the electrodes in the each set is 1 degree or less.

2. The electrodes for source/drain according to claim 1 , further comprising a protective film, wherein the protective film is composed of an insulating polymer having a thickness of 1 μm or less and a glass transition point of 80° C. or more, attached to surfaces opposite to the surfaces of the electrodes in the each set by electrostatic force, and extending in at least a part of the channel in the each set.

3. The electrodes for source/drain according to claim 1 , wherein the electrodes comprise plating.

4. An organic semiconductor device comprising: a gate electrode, a gate insulating film, an organic semiconductor film, and the electrodes for source/drain according to claim 1 .

5. Electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes,
wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less, and further comprising a protective film, wherein the protective film is composed of an insulating polymer having a thickness of 1 μm or less and a glass transition point of 80° C. or more, attached to surfaces opposite to the surfaces of the electrodes in the each set by electrostatic force, and extending in at least a part of the channel in the each set.

6. The electrodes for source/drain according to claim 5 , wherein the electrodes comprise plating.

7. An organic semiconductor device comprising: a gate electrode, a gate insulating film, an organic semiconductor film, and the electrodes for source/drain according to claim 5 .

8. An organic semiconductor device comprising: a gate electrode, a gate insulating film, an organic semiconductor film, and electrodes for source/drain comprising 10 or more sets of electrodes,
wherein a channel length between the electrodes in each set is 200 μm or less,
the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less, and
a surface roughness Rq of a surface of the organic semiconductor film in contact with the electrodes in each set is equal to or less than 2 nm.

9. A method for manufacturing electrodes for source/drain of an organic semiconductor device, the method comprising:
preparing a substrate having a surface with a surface roughness Rq of 2 nm or less,
forming a release layer on the surface of the substrate,
forming 10 or more sets of electrodes for source/drain having a channel length of 200 μm or less on the release layer,
forming a protective film on the release layer and the electrodes,
forming a handling film on the protective film,
separating an interface between the release layer and each of the electrodes and the protective film to obtain an electrode film comprising the electrodes, the protective film, and the handling film, and
removing the handling film.

10. The method for manufacturing electrodes for source/drain of an organic semiconductor device according to claim 9 , wherein the forming the release layer comprises:
subjecting the surface of the substrate to UV ozone treatment to form a hydroxyl group on the surface of the substrate,
subjecting the surface of the substrate on which the hydroxyl group has been formed to SAM treatment.

11. The method for manufacturing electrodes for source/drain of an organic semiconductor device according to claim 9 , wherein the forming the release layer comprises:
forming a liquid-repellent polymer layer on the surface of the substrate,
disposing a photomask or a metal mask on the substrate on which the liquid-repellent polymer layer has been formed,
performing UV irradiation on the substrate from the side on which the photomask or the metal mask has been disposed to decompose the liquid-repellent polymer layer at the irradiated portion and form a hydroxyl group at the decomposed portion of the liquid-repellent polymer layer, and
performing SAM treatment on the portion where the hydroxyl group has been formed, and wherein the forming 10 or more sets of electrodes for source/drain having a channel length of 200 μm or less comprises:
applying a conductive ink containing metal particles on the release layer; and
performing electroless plating using the metal particles as a catalyst on the substrate on which the release layer coated with the conductive ink has been formed to form 10 or more sets of electrodes for source/drain provided with plating having the channel length of 200 μm or less.

12. A method for manufacturing an organic semiconductor device, comprising:
preparing a substrate having a surface roughness Rq of 2 nm or less,
forming a release layer on the surface of the substrate,
forming 10 or more sets of electrodes for source/drain having a channel length of 200 μm or less on the release layer,
forming a protective film on the release layer and the electrodes,
forming a handling film on the protective film,
separating an interface between the release layer and the electrodes and the protective film to obtain an electrode film comprising the electrodes, the protective film, and the handling film,
disposing the electrode film on the organic semiconductor film, and
removing the handling film.

13. The method for manufacturing an organic semiconductor device according to claim 12 , wherein the forming the release layer comprises:
subjecting the surface of the substrate to UV ozone treatment to form a hydroxyl group on the surface of the substrate, and
performing SAM treatment on the surface of the substrate on which the hydroxyl group has been formed.

14. The method for manufacturing an organic semiconductor device according to claim 12 , wherein the forming the release layer comprises:
forming a liquid-repellent polymer layer on the surface of the substrate,
disposing a photomask or a metal mask on the substrate on which the liquid-repellent polymer layer has been formed,
performing UV irradiation on the substrate from the side on which the photomask or the metal mask has been disposed to decompose the liquid-repellent polymer layer at the irradiated portion and form a hydroxyl group at the decomposed portion of the liquid-repellent polymer layer, and
performing SAM treatment on the portion where the hydroxyl group has been formed, and wherein the forming 10 or more sets of electrodes for source/drain having a channel length of 200 μm or less comprises:
applying a conductive ink containing metal particles on the release layer; and
performing electroless plating on the substrate on which the release layer coated with the conductive ink has been formed using the metal particles as a catalyst to form 10 or more sets of electrodes for source/drain provided with plating having the channel length of 200 μm or less.

Assignees

• Univ Tokyo

Inventors

• Takeya Junichi
• Watanabe Shunichiro
• Makita Tatsuyuki

Classifications

• H10K71/80

  using temporary substrates · CPC title

• H10K19/10 Primary

  comprising field-effect transistors · CPC title

• H10K10/82 Primary

  Electrodes · CPC title

• H10K10/84 Primary

  Ohmic electrodes, e.g. source or drain electrodes · CPC title

• H10K10/466 Primary

  Lateral bottom-gate IGFETs comprising only a single gate · CPC title