Magnetoelectronic device comprising ferrite-based nanocomposite

Patent metadata

Field	Value
Publication number	US-12131852-B2
Application number	US-202318520645-A
Country	US
Kind code	B2
Filing date	Nov 28, 2023
Priority date	May 7, 2021
Publication date	Oct 29, 2024
Grant date	Oct 29, 2024

Abstract

A magnetoelectric multiferroic nanocomposite. The nanocomposite comprises a ferroelectric perovskite oxide and a rare-earth substituted mixed ternary transition metal ferrite of the formula A 1-x B x R y Fe 2-y O 4 . The nanocomposite has a high dielectric constant, low dielectric loss, both stable over a wide frequency range. These properties may make the nanocomposite desirable for applications in microelectronic devices, sensors and antennas.

First claim

The invention claimed is:

1. A magnetoelectronic device in the form of a computer memory device selected from the group consisting of a magnetic random access memory and a multiferroic random access memory, comprising:
a nanocomposite composition comprising:
a ferroelectric perovskite oxide, and
a rare-earth substituted mixed ternary transition metal ferrite of the formula
A 1-x B x R y Fe 2-y O 4 ,

wherein A and B represent different transition metals;
0<x<1;
R is thulium;
0<y<0.2; and
the rare-earth substituted mixed ternary transition metal ferrite is superparamagnetic at 0 to 50° C.

2. The magnetoelectronic device of claim 1 , wherein the ferroelectric perovskite oxide is present in the form of particles having a mean particle size of less than 1000 nm.

3. The magnetoelectronic device of claim 1 , wherein A is cobalt.

4. The magnetoelectronic device of claim 1 , wherein B is zinc.

5. The magnetoelectronic device of claim 1 , wherein 0.1≤x<0.5.

6. The magnetoelectronic device of claim 1 , wherein the rare-earth substituted mixed ternary transition metal ferrite is substantially free of nickel.

7. The magnetoelectronic device of claim 1 , wherein 0.001≤y≤0.1.

8. The magnetoelectronic device of claim 1 , wherein the rare-earth substituted mixed ternary transition metal ferrite is present in the form of particles having a mean particle size of 10 nm to 5 μm.

9. The magnetoelectronic device of claim 1 , wherein a molar ratio of the rare-earth substituted mixed ternary transition metal ferrite to the ferroelectric perovskite oxide is 0.05:1 to 0.5:1.

10. The magnetoelectronic device of claim 1 , wherein the nanocomposite has a dielectric constant (ε′) of 10 to 15 for frequencies of 10 0 to 10 6 Hz at 0 to 140° C.

11. The magnetoelectronic device of claim 1 , wherein the nanocomposite has a dielectric loss tangent of 0 to 0.1 for frequencies of 10 0 to 10 6 Hz at 0 to 140° C.

12. The magnetoelectronic device of claim 1 , wherein the nanocomposite has a band gap of 1.40 to 2.5 eV.

13. The magnetoelectronic device of claim 1 , wherein the nanocomposite has a saturation magnetization of 0.1 to 20 emu/g at 0 to 50° C. and a magnetic coercivity of 10 to 2000 Oe at 0 to 50° C.

Assignees

• Univ Imam Abdulrahman Bin Faisal

Inventors

• Slimani Yassine
• Almessiere Munirah Abdullah
• Baykal Abdulhadi

Classifications

• H01F7/06

  Electromagnets; Actuators including electromagnets {(electric coils H01F5/00; devices for holding workpieces using electric force B23Q3/15; load-engaging elements for lifting articles electromagnetically B66C1/06; electromagnetic couplings F16D27/00; magnetic brakes F16D63/002; electromagnetically operated valves F16K11/24, F16K31/00; analysing materials by magnetic means G01N27/72, G01N27/80; electromagnets for winding mechanical clocks G04C1/02; electromagnetic relays H01H51/00; windings for salient poles of dynamo-electric machines H02K3/18; electromagnets for telegraphic communication H04L; for arc lamps H05B31/28)} · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01F1/342 Primary

  Oxides (H01F1/36 and H01F1/38 take precedence) · CPC title