Quantum dots and devices including the same

Patent metadata

Field	Value
Publication number	US-12130508-B2
Application number	US-202418429592-A
Country	US
Kind code	B2
Filing date	Feb 1, 2024
Priority date	Nov 29, 2018
Publication date	Oct 29, 2024
Grant date	Oct 29, 2024

Abstract

A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

First claim

What is claimed is:

1. A method of forming a semiconductor nanocrystal, comprising
reacting an aluminum chloride with a Lewis base to obtain an acid base adduct comprising the aluminum and chlorine; and
in the presence of a semiconductor nanocrystal particle comprising a core, reacting a zinc precursor not comprising a halogen and a sulfur precursor in the presence of the acid base adduct and zinc chloride to form the semiconductor nanocrystal comprising zinc and sulfur,
wherein an amount of the aluminum chloride is about 10 mole percent to about 100 mole percent, based on a total number of moles of the sulfur precursor and an amount of the zinc chloride is about 10 mole percent to about 100 mole percent, based on a total number of moles of the sulfur precursor.

2. The method of claim 1 , wherein the Lewis base comprises R3P or R3PO, wherein, R is hydrogen or a substituted or unsubstituted C1 to C40 aliphatic hydrocarbon group, a substituted or unsubstituted C6 to C40 aromatic hydrocarbon group, or a combination thereof, provided that at least one of R is alkyl.

3. The method of claim 1 , wherein the Lewis base comprises trioctylphosphine.

4. The method of claim 1 , wherein the aluminum chloride is reacted with the Lewis base to obtain the acid base adduct at a reaction temperature of greater than or equal to about 90° C. and less than or equal to about 110° C.

5. The method of claim 1 , wherein the core comprises indium phosphide.

6. The method of claim 1 , where the zinc precursor comprises a reaction product of a zinc compound and a fatty acid.

7. The method of claim 6 , where the zinc compound comprises zinc acetate and the fatty acid comprises a monocarboxylic acid having 10 or more carbon atoms.

8. The method of claim 7 , where the fatty acid comprises stearic acid, oleic acid, palmitic acid, lauric acid.

9. The method of claim 6 , wherein reaction of the zinc compound and the fatty acid is at a temperature of greater than or equal to about 120° C. in an organic solvent.

10. The method of claim 9 , wherein the organic solvent comprises hexadecylamine, dioctylamine, trioctylamine, pyridine, hexadecane, octadecane, octadecene, squalane, phenyldodecane, phenyltetradecane, phenyl hexadecane, trioctylphosphine oxide, phenyl ether, benzyl ether, or a combination thereof.

11. The method of claim 1 , wherein the semiconductor nanocrystal does not comprise cadmium.

12. The method of claim 1 , wherein the semiconductor nanocrystal comprising zinc and sulfur comprises a ZnS outermost layer.

13. The method of claim 1 , wherein the semiconductor nanocrystal particle further comprises a first shell on the core.

14. The method of claim 13 , wherein the first shell comprises zinc selenide.

15. The method of claim 14 , wherein the semiconductor nanocrystal comprising zinc and sulfur comprises a ZnS outermost layer.

16. The method of claim 14 , wherein in the semiconductor nanocrystal, a mole ratio of sulfur relative to selenium is less than or equal to about 2:1.

17. The method of claim 14 , wherein in the semiconductor nanocrystal, a mole ratio of zinc relative to selenium and sulfur is greater than or equal to about 1.1:1.

18. The method of claim 1 , wherein in the semiconductor nanocrystal, aluminum is present in an amount of greater than or equal to about 20 mole percent, based on the total number of moles of sulfur.

19. The method of claim 1 , wherein in the semiconductor nanocrystal, chlorine is present in an amount of greater than or equal to about 25 mole percent, based on the total number of moles of sulfur.

20. The method of claim 1 , wherein the amount of the aluminum chloride is greater than or equal to about 40 mole percent and less than or equal to about 70 mole percent, based on the total number of moles of the sulfur precursor and the amount of the zinc chloride is greater than or equal to about 40 mole percent and less than or equal to about 70 mole percent, based on the total number of moles of the sulfur precursor.

Assignees

• Samsung Electronics Co Ltd
• Samsung Display Co Ltd

Inventors

• Kim Tae Gon
• Park Garam
• Ahn Jooyeon
• Park Shang Hyeun
• Jun Shin Ae

Classifications

• H10H20/826

  comprising only Group IV materials · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/823

  comprising only Group II-VI materials, e.g. ZnO · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10K50/115

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title